Patent classifications
H01L2224/83224
Apparatus and Method for Direct Transfer of Semiconductor Devices
A system performs a direct transfer of a semiconductor device die from a first substrate to a second substrate. A semiconductor device die is disposed on a first side of the first substrate. The system includes a first conveyance mechanism to convey the first substrate, and a second conveyance mechanism to convey the second substrate with respect to the first substrate. The second conveyance mechanism includes a first portion and a second portion to clamp the second substrate adjacent to the first side of the first substrate. The first portion of the second conveyance mechanism has a concave shape and the second portion of the second conveyance mechanism has a convex counter shape corresponding to the concave shape of the first portion. The system also comprises a transfer mechanism disposed adjacent to the first conveyance mechanism to effectuate the direct transfer.
APPARATUS AND METHOD FOR STACKING SEMICONDUCTOR DEVICES
A method of directly transferring a first semiconductor device die to a substrate includes loading a wafer tape into a first frame, loading a substrate into a second frame, arranging at least one of the first frame or the second frame such that a surface of the substrate is adjacent to a first side of the wafer tape, and orienting a needle to a position adjacent to a second side of the wafer tape, the needle extending in a direction toward the wafer tape. The method also includes activating a needle actuator connected to the needle to move the needle to a die transfer position at which the needle contacts the second side of the wafer tape to press the first semiconductor device die into contact with the second semiconductor device die.
TRANSFER METHOD AND TRANSFER APPARATUS
A transfer method including following steps is provided. A pick-up device having a plurality of caves is provided. A first magnetic force capable of attracting a plurality of micro-devices to move toward the caves of the pick-up device is provided. Given that the first magnetic force is provided, the pick-up device is in contact with the micro-devices, so that the micro-devices are snapped by the caves of the pick-up device. The micro-devices are transferred from the caves of the pick-up device to a receiving device. Besides, a transfer apparatus is also provided.
Apparatus and method for direct transfer of semiconductor devices from a substrate and stacking semiconductor devices on each other
An apparatus includes a first frame to hold a wafer tape, and a second frame to hold a substrate adjacent to the first side of the wafer tape. A needle is disposed adjacent to the second side of the wafer tape and extends in a direction toward the wafer tape. A needle actuator is connected to the needle to move the needle, during a direct transfer process, to a die transfer position at which the needle contacts the second side of the wafer tape to press the first semiconductor device die into contact with a second semiconductor device die. An energy-emitting device is disposed adjacent to the substrate to induce a bond between the first semiconductor device die and the second semiconductor device die such that the first semiconductor device die is released from the wafer tape and is attached to the second semiconductor device die.
Method of fabricating a semiconductor package
Provided is a method of fabricating a semiconductor package. The method includes preparing a package substrate having a substrate pad, and mounting a semiconductor chip on the substrate pad. Mounting the semiconductor chip includes forming a resin layer containing a solder and reducing agent granules having a first capsule layer, between a chip pad of the semiconductor chip and the substrate pad, and bonding the chip pad to the substrate pad using laser irradiated to the semiconductor chip.
ELECTRONIC ASSEMBLIES HAVING A MESH BOND MATERIAL AND METHODS OF FORMING THEREOF
Embodiments of the present disclosure include a method of forming an electronic assembly with a mesh bond layer. The method may include forming a mesh bond material comprising a first surface spaced apart from a second surface by a thickness of the mesh bond material and one or more openings extending from the first surface through the thickness of the mesh bond material to the second surface. The method may further include adjusting at least one of: the thickness of the mesh bond material, a geometry of the one or more openings, or a size of the one or more openings of the mesh bond material, where the adjusting modifies a Young's modulus of the mesh bond material, and bonding the first surface of the mesh bond material to a surface of a semiconductor device.
Method for minimizing average surface roughness of soft metal layer for bonding
A method for minimizing an average surface includes: forming an epitaxial layer on a growth substrate; forming the soft metal layer on the epitaxial layer in which the average surface roughness of a bonding surface of the soft metal layer is greater than a first value; forming a glue layer on a carrier substrate; placing a combination of the glue layer and the carrier substrate on the bonding surface in which the glue layer being in contact with the bonding surface of the soft metal layer; and performing a laser lift-off process to separate the growth substrate from the epitaxial layer such that the average surface roughness of the bonding surface of the soft metal layer is reduced to be less than a second value. The second value is smaller than the first value, and the second value is less than 80 nm.
Method for minimizing average surface roughness of soft metal layer for bonding
A method for minimizing an average surface includes: forming an epitaxial layer on a growth substrate; forming the soft metal layer on the epitaxial layer in which the average surface roughness of a bonding surface of the soft metal layer is greater than a first value; forming a glue layer on a carrier substrate; placing a combination of the glue layer and the carrier substrate on the bonding surface in which the glue layer being in contact with the bonding surface of the soft metal layer; and performing a laser lift-off process to separate the growth substrate from the epitaxial layer such that the average surface roughness of the bonding surface of the soft metal layer is reduced to be less than a second value. The second value is smaller than the first value, and the second value is less than 80 nm.
Method and apparatus for transfer of semiconductor devices
A system to transfer an unpackaged die directly from a die holding substrate to a transfer location on a secondary substrate. The system includes a die separation device disposed adjacent to the die holding substrate to initiate separation of the unpackaged die from the die holding substrate. An energy source is disposed adjacent to the secondary substrate to apply energy to the transfer location and affix the unpackaged die directly to the secondary substrate. A sensor detects a position and orientation of the secondary substrate with respect to the unpackaged die on the die holding substrate. A processor is in communication with the die separation device, the energy source, and the sensor. The processor is configured to cause actuation of the die separation device and the energy source according, at least in part, to transfer instructions and data received from the sensor.
Semiconductor device on glass substrate
A lighting component including a plurality of die transferred to the glass substrate. The transfer occurs by positioning the glass substrate to face a first surface of a die carrier carrying multiple die. A reciprocating transfer member thrusts against a second surface of the die carrier to actuate the transfer member thereby causing a localized deflection of the die carrier in a direction of the surface of the glass substrate to position an initial die proximate to the glass substrate. The initial die transfers directly to a circuit trace on the glass substrate. At least one of the die carrier or the transfer member is then shifted such that the transfer member aligns with a subsequent die on the first surface of the die carrier. The acts of actuating, transferring, and shifting are repeated to effectuate a transfer of the multiple die onto the glass substrate.