Patent classifications
H01L2224/83224
SUPPORT SUBSTRATE FOR TRANSFER OF SEMICONDUCTOR DEVICES
An apparatus for transferring a semiconductor die from a wafer tape to a product substrate. The apparatus includes a wafer frame configured to secure the wafer tape and a support frame configured to secure a support substrate. The support substrate includes a plurality of holes and secures the product substrate. The apparatus further includes an actuator to transfer the semiconductor die to a transfer location on the product substrate.
METHOD AND APPARATUS FOR IMPROVED DIRECT TRANSFER OF SEMICONDUCTOR DIE
A system to effectuate improved transfer of semiconductor die. A first frame secures a first substrate having the semiconductor die. A second frame secures a second substrate adjacent the first substrate. A needle is disposed adjacent to the first frame. The needle includes: a longitudinal surface extending in a direction toward the second frame, and a base end having a cross-sectional dimension being based, at least in part, on a cross-sectional dimension of the semiconductor die. A needle actuator is operably connected to the needle and is configured to actuate the needle such that, during the transfer operation, when the first substrate is secured in the first frame and the second substrate is secured in the second frame, the needle presses the semiconductor die into contact with the second substrate so as to transfer the semiconductor die onto the second substrate.
APPARATUS FOR DIRECT TRANSFER OF SEMICONDUCTOR DEVICES WITH NEEDLE RETRACTION SUPPORT
An apparatus, for attaching a semiconductor device die to a circuit substrate, includes an elongated rod to press a holding substrate carrying the semiconductor device die into a position at which the semiconductor device die attaches to the circuit substrate; and a support including a base portion having a hole via which the elongated rod passes when actuated to press the holding substrate.
METHOD AND APPARATUS FOR DIRECT TRANSFER OF SEMICONDUCTOR DEVICE DIE FROM A MAPPED WAFER
A system for performing a direct transfer of a plurality of semiconductor die from a first substrate to a second substrate based on map data of the location of the semiconductor die. A first conveyance mechanism conveys the first substrate. A second conveyance mechanism conveys the second substrate. A transfer mechanism is disposed adjacent to the first conveyance mechanism to effectuate the direct transfer. A controller causes one or more processors to perform operations including: determining positions of the plurality of semiconductor die based at least in part on map data, conveying at least one of the first substrate or the second substrate such that the first substrate, the second substrate, and the transfer mechanism are in a direct transfer position, and activating the transfer mechanism to perform the direct transfer of the plurality of semiconductor die.
METHOD OF MANUFACTURING OPTICAL COMPONENT
A method of manufacturing an optical component for an optical semiconductor includes: providing a joined body including: a first member having light transmissivity and containing at least one element selected from the group consisting of oxygen, fluorine, and nitrogen, and a second member, wherein the first member and the second member are joined together via a metal joining member made by directly bonding a first metal film formed on the first member and a second metal film formed on the second member; and irradiating the joining member with a laser beam or a microwave.
Semiconductor Device Circuit Apparatus Bonded with Anisotropic Conductive Film and Method of Direct Transfer for Making the Same
An apparatus includes a circuit substrate including a circuit trace and a micro-sized semiconductor device die electrically connected to the circuit substrate. The micro-sized semiconductor device die has a height not greater than 400 microns and a width not greater than 800 microns. An anisotropic conductive adhesive (ACA) is disposed between the circuit substrate and the micro-sized semiconductor device die, thereby providing an electrical connection from the circuit substrate to the micro-sized semiconductor device die.
Flexible support substrate for transfer of semiconductor devices
An apparatus for transferring a semiconductor die from a wafer tape to a product substrate. The apparatus includes a wafer frame configured to hold the wafer tape and a support frame disposed adjacent to the wafer frame. A flexible support substrate is secured in the support frame and is configured to support the product substrate. The apparatus further includes an actuator configured to position the semiconductor die at a transfer position with respect to the product substrate. An energy-emitting device is configured to direct energy through the flexible support substrate to a portion of the product substrate corresponding to the transfer position at which the semiconductor die is positioned to be affixed to the product substrate.
SUBSTRATE WITH ARRAY OF LEDS FOR BACKLIGHTING A DISPLAY DEVICE
An apparatus includes a substrate and a circuit trace having a predetermined pattern disposed on the substrate. A plurality of LEDs are connected to the substrate via the circuit trace. The predetermined pattern is arranged as an array of lines along a surface of the substrate, and the plurality of LEDs are distributed along the lines of the array.
APPARATUS AND METHOD FOR STACKING SEMICONDUCTOR DEVICES
An apparatus including components to stack semiconductor device die.
Method of fabricating diamond-semiconductor composite substrates
A method of fabricating a semiconductor-on-diamond composite substrate, the method comprising: (i) starting with a native semiconductor wafer comprising a native silicon carbide substrate on which a compound semiconductor is disposed; (ii) bonding a silicon carbide carrier substrate to the compound semiconductor; (iii) removing the native silicon carbide substrate; (iv) forming a nucleation layer over the compound semiconductor; (v) growing polycrystalline chemical vapor deposited (CVD) diamond on the nucleation layer to form a composite diamond-compound semiconductor-silicon carbide wafer, and (vi) removing the silicon carbide carrier substrate y laser lift-off to achieve a layered structure comprising the compound semiconductor bonded to the polycrystalline CVD diamond via the nucleation layer, wherein in step (ii) the silicon carbide carrier substrate is bonded to the compound semiconductor via a laser absorption material which absorbs laser light, wherein the laser has a coherence length shorter than a thickness of the silicon carbide carrier substrate.