The present invention aims to provide a pressure sensitive adhesive having high pressure sensitive adhesiveness and heat resistance and serves to makes it possible to transfer and mount a large number of semiconductor elements at once even when the process involves a step for applying heat to the semiconductor elements. It provides a pressure sensitive adhesive including a polyimide copolymer (A) having at least an acid dianhydride residue and a diamine residue and also comprising a dimer acid epoxy resin (B), wherein the diamine residue has a diamine residue (A1) as represented by the formula (1) in which n is a natural number of 1 or more and 15 or less (hereinafter referred to as the diamine residue (A1)), a diamine residue (A2) as represented by the formula (1) in which n is a natural number of 16 or more and 50 or less (hereinafter referred to as the diamine residue (A2)), and a diamine residue (A3) having a phenolic hydroxyl group (hereinafter referred to as the diamine residue (A3)) and also wherein the diamine residue (A1) accounts for 50.0 mol % or more and 95.0 mol % or less, the diamine residue (A2) accounting for 1.0 mol % or more and 40.0 mol % or less, and the diamine residue (A3) accounting for 1.0 mol % or more and 30.0 mol % or less, of all diamine residues, which account for 100.0 mol %, in the polyimide copolymer (A).

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A microscale selective laser sintering (-SLS) that improves the minimum feature-size resolution of metal additively manufactured parts by up to two orders of magnitude, while still maintaining the throughput of traditional additive manufacturing processes. The microscale selective laser sintering includes, in some embodiments, ultra-fast lasers, a micro-mirror based optical system, nanoscale powders, and a precision spreader mechanism. The micro-SLS system is capable of achieving build rates of at least 1 cm.sup.3/hr while achieving a feature-size resolution of approximately 1 m. In some embodiments, the exemplified systems and methods facilitate a direct write, microscale selective laser sintering -SLS system that is configured to write 3D metal structures having features sizes down to approximately 1 m scale on rigid or flexible substrates. The exemplified systems and methods may operate on a variety of material including, for example, polymers, dielectrics, semiconductors, and metals.

A bonded assembly including: a first electronic component including a first substrate and a plurality of first electrodes disposed in a pressed area at a first height from a surface of the first substrate; a second electronic component including a second substrate and a plurality of second electrodes disposed at a second height from a surface of the second substrate, a second electrode overlapping with a corresponding first electrode to face the first electrode; a conductive bonding layer disposed between the first electrode and the second electrode overlapped with each other to bond the first electrode and the second electrode; and at least one spacer disposed between the first substrate and the second substrate to overlap the pressed area, the at least one spacer having a thickness that is greater than a value obtained by summing the first height and the second height.

An apparatus includes a frame to hold a wafer tape having a first side and a second side. A plurality of semiconductor device dies are disposed on the first side of the wafer tape. A support member supports a product substrate having a circuit trace thereon. The support member is configured to hold the product substrate such that the circuit trace is disposed facing the plurality of semiconductor device dies on the wafer tape. A plurality of needles are disposed adjacent the second side of the wafer tape. A needle actuator is connected to the plurality of needles and is configured to move at least one needle of the plurality of needles to a die transfer position at which the at least one needle presses on the second side of the wafer tape to press a semiconductor device die into contact with the circuit trace.

A method of transferring semiconductor devices to a product substrate includes positioning a surface of the product substrate to face a first surface of a semiconductor wafer having the semiconductor devices thereon, and actuating a transfer mechanism to cause the transfer mechanism to engage a second surface of the semiconductor wafer. The second surface of the semiconductor wafer is opposite the first surface of the semiconductor wafer. Actuating the transfer mechanism includes causing a pin to thrust against a position on the second surface of the semiconductor wafer corresponding to a position of a particular semiconductor device located on the first surface of the semiconductor wafer, and retracting the pin to a rest position. The method further includes detaching the particular semiconductor device from the second surface of the semiconductor wafer, and attaching a particular semiconductor device to the product substrate.

Provided is an electronic apparatus including a metal wiring. The metal wiring includes a plurality of first regions covered with a solder layer, a second region provided between two first regions of the plurality of first regions, and a third region having a nitrogen amount of 20 atoms % or more. An oxygen amount is largest in the second region, followed by at least one of the plurality of first regions, and then by the third region. The nitrogen amount may be largest in the third region, followed by at least one of the plurality of first regions, and then by the second region.

A method for the transfer of components from a sender substrate to a receiver substrate includes provision and/or production of the components on the sender substrate, transfer of the components of the sender substrate to the transfer substrate, and transfer of the components from the transfer substrate to the receiver substrate. The components can be transferred selectively by means of bonding means and/or debonding means.

Proposed is a solder soldering method using a laser. The solder soldering method performs solder soldering within a few seconds by using the laser so that warpage occurring due to a difference in a coefficient of thermal expansion between a chip and a substrate may be reduced, thermal shock that occurs on the chip and the substrate may be reduced, an entire process time may be reduced, and defects due to an uneven solder processing temperature may be reduced. The solder soldering method includes a supplying process in which a substrate having solder is supplied to a substrate fixing member, a preheating process in which the substrate and the solder are preheated, an attachment process in which the substrate is irradiated with the laser and the solder is melted and attached to the substrate, and a discharging process in which the substrate is moved to a tray.

A method is provided for assembly of a micro-electronic component, in which a conductive die bonding material is used. This material includes a conductive thermosettable resin material or flux based solder and a dynamic release layer adjacent to the conductive thermoplastic material die bonding material layer A laser beam is impinged on the dynamic release layer, adjacent to the die bonding material layer, in such a way that the dynamic release layer is activated to direct conductive die bonding material matter towards the pad structure to be treated, to cover a selected part of the pad structure with a transferred conductive die bonding material. The laser beam is restricted in timing and energy, in such a way that the die bonding material matter remains thermosetting. Accordingly, adhesive matter can be transferred while preventing that the adhesive is rendered ineffective by thermal overexposure in the transferring process.

Embodiments of the present disclosure are directed to die adhesive films for integrated circuit (IC) packaging, as well as methods for forming and removing die adhesive films and package assemblies and systems incorporating such die adhesive films. A die adhesive film may be transparent to a first wavelength of light and photoreactive to a second wavelength of light. In some embodiments, the die adhesive film may be applied to a back or inactive side of a die, and the die surface may be detectable through the die adhesive film. The die adhesive film may be cured and/or marked with laser energy having the second wavelength of light. The die adhesive film may include a thermochromic dye and/or nanoparticles configured to provide laser mark contrast. UV laser energy may be used to remove the die adhesive film in order to expose underlying features such as TSV pads.