Provided is copper paste for joining including metal particles, and a dispersion medium. The metal particles include sub-micro copper particles having a volume-average particle size of 0.12 m to 0.8 m, and micro copper particles having a volume-average particle size of 2 m to 50 m, a sum of the amount of the sub-micro copper particles contained and the amount of the micro copper particles contained is 80% by mass or greater on the basis of a total mass of the metal particles, and the amount of the sub-micro copper particles contained is 30% by mass to 90% by mass on the basis of a sum of a mass of the sub-micro copper particles and a mass of the micro copper particles.

Provided is copper paste for joining including metal particles, and a dispersion medium. The metal particles include sub-micro copper particles having a volume-average particle size of 0.12 m to 0.8 m, and micro copper particles having a volume-average particle size of 2 m to 50 m, a sum of the amount of the sub-micro copper particles contained and the amount of the micro copper particles contained is 80% by mass or greater on the basis of a total mass of the metal particles, and the amount of the sub-micro copper particles contained is 30% by mass to 90% by mass on the basis of a sum of a mass of the sub-micro copper particles and a mass of the micro copper particles.

An apparatus for transferring a semiconductor die from a wafer tape to a product substrate. The apparatus includes a wafer frame configured to hold the wafer tape and a support frame disposed adjacent to the wafer frame. A flexible support substrate is secured in the support frame and is configured to support the product substrate. The apparatus further includes an actuator configured to position the semiconductor die at a transfer position with respect to the product substrate. An energy-emitting device is configured to direct energy through the flexible support substrate to a portion of the product substrate corresponding to the transfer position at which the semiconductor die is positioned to be affixed to the product substrate.

The present disclosure is directed to a hybrid conductive ink including: silver nanoparticles and eutectic low melting point alloy particles, wherein a weight ratio of the eutectic low melting point alloy particles and the silver nanoparticles ranges from 1:20 to 1:5. Also provided herein are methods of forming an interconnect including a) depositing a hybrid conductive ink on a conductive element positioned on a substrate, wherein the hybrid conductive ink comprises silver nanoparticles and eutectic low melting point alloy particles, the eutectic low melting point alloy particles and the silver nanoparticles being in a weight ratio from about 1:20 to about 1:5; b) placing an electronic component onto the hybrid conductive ink; c) heating the substrate, conductive element, hybrid conductive ink and electronic component to a temperature sufficient i) to anneal the silver nanoparticles in the hybrid conductive ink and ii) to melt the low melting point eutectic alloy particles, wherein the melted low melting point eutectic alloy flows to occupy spaces between the annealed silver nanoparticles, d) allowing the melted low melting point eutectic alloy of the hybrid conductive ink to harden and fuse to the electronic component and the conductive element, thereby forming an interconnect. Electrical circuits including conductive traces and, optionally, interconnects formed with the hybrid conductive ink are also provided.

The present disclosure is directed to a hybrid conductive ink including: silver nanoparticles and eutectic low melting point alloy particles, wherein a weight ratio of the eutectic low melting point alloy particles and the silver nanoparticles ranges from 1:20 to 1:5. Also provided herein are methods of forming an interconnect including a) depositing a hybrid conductive ink on a conductive element positioned on a substrate, wherein the hybrid conductive ink comprises silver nanoparticles and eutectic low melting point alloy particles, the eutectic low melting point alloy particles and the silver nanoparticles being in a weight ratio from about 1:20 to about 1:5; b) placing an electronic component onto the hybrid conductive ink; c) heating the substrate, conductive element, hybrid conductive ink and electronic component to a temperature sufficient i) to anneal the silver nanoparticles in the hybrid conductive ink and ii) to melt the low melting point eutectic alloy particles, wherein the melted low melting point eutectic alloy flows to occupy spaces between the annealed silver nanoparticles, d) allowing the melted low melting point eutectic alloy of the hybrid conductive ink to harden and fuse to the electronic component and the conductive element, thereby forming an interconnect. Electrical circuits including conductive traces and, optionally, interconnects formed with the hybrid conductive ink are also provided.

Methods of transferring micro-array LEDs of various colors onto a surface of a display substrate are provided. The transferring includes releasing micro-LEDs of a specific color from a structure that includes a releasable material onto a display substrate. The releasable material may be a laser ablatable material or a material that is readily dissolved in a specific etchant.

Methods of transferring micro-array LEDs of various colors onto a surface of a display substrate are provided. The transferring includes releasing micro-LEDs of a specific color from a structure that includes a releasable material onto a display substrate. The releasable material may be a laser ablatable material or a material that is readily dissolved in a specific etchant.

An apparatus for transferring a semiconductor die from a wafer tape to a product substrate. The apparatus includes a wafer frame configured to hold the wafer tape and a support frame disposed adjacent to the wafer frame. A flexible support substrate is secured in the support frame and is configured to support the product substrate. The apparatus further includes an actuator configured to position the semiconductor die at a transfer position with respect to the product substrate. An energy-emitting device is configured to direct energy through the flexible support substrate to a portion of the product substrate corresponding to the transfer position at which the semiconductor die is positioned to be affixed to the product substrate

Methods of transferring micro-array LEDs of various colors onto a surface of a display substrate are provided. The transferring includes releasing micro-LEDs of a specific color from a structure that includes a releasable material onto a display substrate. The releasable material may be a laser ablatable material or a material that is readily dissolved in a specific etchant.

Methods of transferring micro-array LEDs of various colors onto a surface of a display substrate are provided. The transferring includes releasing micro-LEDs of a specific color from a structure that includes a releasable material onto a display substrate. The releasable material may be a laser ablatable material or a material that is readily dissolved in a specific etchant.