A micro LED display panel includes a substrate, a plurality of first metal electrodes and a plurality of metal pads on a surface of the substrate, a connection layer on the substrate, a plurality of micro LEDs on a side of the connection layer away from the substrate. The connection layer includes conductive particles. Each of the micro LEDs is coupled to at least one of the first metal electrode. A side of each of the metal pads away from the substrate is coupled to some of the conductive particles in the connection layer to form a metal retaining wall. The metal retaining walls enhance structural strength of the micro LED display panel and avoid breakage of any of the micro LEDs.

A micro LED display panel includes a substrate, a plurality of first metal electrodes and a plurality of metal pads on a surface of the substrate, a connection layer on the substrate, a plurality of micro LEDs on a side of the connection layer away from the substrate. The connection layer includes conductive particles. Each of the micro LEDs is coupled to at least one of the first metal electrode. A side of each of the metal pads away from the substrate is coupled to some of the conductive particles in the connection layer to form a metal retaining wall. The metal retaining walls enhance structural strength of the micro LED display panel and avoid breakage of any of the micro LEDs.

A semiconductor device having a dolmen structure, includes: a substrate; a first chip disposed on the substrate; a plurality of support pieces disposed around the first chip, on the substrate; and a bonding adhesive piece-attached chip supported by the plurality of support pieces and disposed to cover the first chip, in which the bonding adhesive piece-attached chip includes a second chip, and a bonding adhesive piece provided on one surface of the second chip, and a shear strength of the support pieces and the bonding adhesive piece-attached chip at 250° C. is 3.2 MPa or more.

A semiconductor device having a dolmen structure, includes: a substrate; a first chip disposed on the substrate; a plurality of support pieces disposed around the first chip, on the substrate; and a bonding adhesive piece-attached chip supported by the plurality of support pieces and disposed to cover the first chip, in which the bonding adhesive piece-attached chip includes a second chip, and a bonding adhesive piece provided on one surface of the second chip, and a shear strength of the support pieces and the bonding adhesive piece-attached chip at 250° C. is 3.2 MPa or more.

Leadless power amplifier (PA) packages and methods for fabricating leadless PA packages having topside terminations are disclosed. In embodiments, the method includes providing electrically-conductive pillar supports and a base flange. At least a first radio frequency (RF) power die is attached to a die mount surface of the base flange and electrically interconnected with the pillar supports. Pillar contacts are further provided, with the pillar contacts electrically coupled to the pillar supports and projecting therefrom in a package height direction. The first RF power die is enclosed in a package body, which at least partially defines a package topside surface opposite a lower surface of the base flange. Topside input/out terminals are formed, which are accessible from the package topside surface and which are electrically interconnected with the first RF power die through the pillar contacts and the pillar supports.

Leadless power amplifier (PA) packages and methods for fabricating leadless PA packages having topside terminations are disclosed. In embodiments, the method includes providing electrically-conductive pillar supports and a base flange. At least a first radio frequency (RF) power die is attached to a die mount surface of the base flange and electrically interconnected with the pillar supports. Pillar contacts are further provided, with the pillar contacts electrically coupled to the pillar supports and projecting therefrom in a package height direction. The first RF power die is enclosed in a package body, which at least partially defines a package topside surface opposite a lower surface of the base flange. Topside input/out terminals are formed, which are accessible from the package topside surface and which are electrically interconnected with the first RF power die through the pillar contacts and the pillar supports.

A semiconductor package may include a semiconductor chip on a package substrate. The semiconductor package may include a plurality of conductive connections connecting the semiconductor chip to the package substrate may be disposed, a plurality of towers which are apart from one another and each include a plurality of memory chips may be disposed, wherein a lowermost memory chip of each of the plurality of towers overlaps the semiconductor chip from a top-down view. The semiconductor package further includes a plurality of adhesive layers be attached between the lowermost memory chip of each of the plurality of towers and the semiconductor chip.

A semiconductor package may include a semiconductor chip on a package substrate. The semiconductor package may include a plurality of conductive connections connecting the semiconductor chip to the package substrate may be disposed, a plurality of towers which are apart from one another and each include a plurality of memory chips may be disposed, wherein a lowermost memory chip of each of the plurality of towers overlaps the semiconductor chip from a top-down view. The semiconductor package further includes a plurality of adhesive layers be attached between the lowermost memory chip of each of the plurality of towers and the semiconductor chip.

A second semiconductor switching element is connected in series with a first semiconductor switching element, and is at least partially stacked on the first semiconductor switching element in the thickness direction. A first control element controls the first semiconductor switching element and the second semiconductor switching element, and performs an overcurrent protection operation with reference to a shunt voltage. The first control element is arranged outside the first semiconductor switching element and the second semiconductor switching element in the in-plane direction.

A second semiconductor switching element is connected in series with a first semiconductor switching element, and is at least partially stacked on the first semiconductor switching element in the thickness direction. A first control element controls the first semiconductor switching element and the second semiconductor switching element, and performs an overcurrent protection operation with reference to a shunt voltage. The first control element is arranged outside the first semiconductor switching element and the second semiconductor switching element in the in-plane direction.