A semiconductor package includes a pad and leads, the pad and leads including a base metal predominantly including copper, a first plated metal layer predominantly including nickel in contact with the base metal, and a second plated metal layer predominantly including silver in contact with the first plated metal layer. The first plated metal layer has a first plated metal layer thickness of 0.1 to 5 microns, and the second plated metal layer has a second plated metal layer thickness of 0.2 to 5 microns. The semiconductor package further includes an adhesion promotion coating predominantly including silver oxide in contact with the second plated metal layer opposite the first plated metal layer, a semiconductor die mounted on the pad, a wire bond extending between the semiconductor die and a lead of the leads, and a mold compound covering the semiconductor die and the wire bond.

An alignment mark at a position that overlaps an area in which an anisotropic conductive film is pasted, and to accurately perform alignment using an image captured by a camera. An alignment method in which an electronic component is mounted on the obverse surface of a transparent substrate with a conductive adhesive agent interposed therebetween, a substrate-side alignment mark and a component-side alignment mark are adjusted from the captured image, and the position at which the electronic component is mounted on the transparent substrate is aligned, wherein in the conductive adhesive agent, conductive particles are in a regular arrangement as viewed from a planar perspective, and in the captured image, the outside edges of the alignment marks exposed between the conductive particles are intermittently visible as line segments (S) along the imaginary line segments of the outside edges of the alignment mark.

An alignment mark at a position that overlaps an area in which an anisotropic conductive film is pasted, and to accurately perform alignment using an image captured by a camera. An alignment method in which an electronic component is mounted on the obverse surface of a transparent substrate with a conductive adhesive agent interposed therebetween, a substrate-side alignment mark and a component-side alignment mark are adjusted from the captured image, and the position at which the electronic component is mounted on the transparent substrate is aligned, wherein in the conductive adhesive agent, conductive particles are in a regular arrangement as viewed from a planar perspective, and in the captured image, the outside edges of the alignment marks exposed between the conductive particles are intermittently visible as line segments (S) along the imaginary line segments of the outside edges of the alignment mark.

In various embodiments, a method for forming a bonded structure is disclosed. The method can comprise mounting a first integrated device die to a carrier. After mounting, the first integrated device die can be thinned. The method can include providing a first layer on an exposed surface of the first integrated device die. At least a portion of the first layer can be removed. A second integrated device die can be directly bonded to the first integrated device die without an intervening adhesive.

In various embodiments, a method for forming a bonded structure is disclosed. The method can comprise mounting a first integrated device die to a carrier. After mounting, the first integrated device die can be thinned. The method can include providing a first layer on an exposed surface of the first integrated device die. At least a portion of the first layer can be removed. A second integrated device die can be directly bonded to the first integrated device die without an intervening adhesive.

A semiconductor device includes a semiconductor substrate having a semiconductor device on an active surface thereof. The semiconductor substrate has a quadrangular plane. An insulating layer is on the active surface of the semiconductor substrate. A passivation layer is on the insulating layer. The insulating layer includes an insulating layer central portion having a side surface extending in parallel with a side surface of the semiconductor substrate. The side surface of the insulating layer central portion is spaced apart from the side surface of the semiconductor substrate by a first size. An insulating layer corner portion is at each corner of the insulating layer central portion and protrudes from the side surface of the insulating layer central portion in a horizontal direction. The passivation layer covers the insulating layer central portion.

A semiconductor device includes a semiconductor substrate having a semiconductor device on an active surface thereof. The semiconductor substrate has a quadrangular plane. An insulating layer is on the active surface of the semiconductor substrate. A passivation layer is on the insulating layer. The insulating layer includes an insulating layer central portion having a side surface extending in parallel with a side surface of the semiconductor substrate. The side surface of the insulating layer central portion is spaced apart from the side surface of the semiconductor substrate by a first size. An insulating layer corner portion is at each corner of the insulating layer central portion and protrudes from the side surface of the insulating layer central portion in a horizontal direction. The passivation layer covers the insulating layer central portion.

Ensure conduction between an electronic component and a circuit substrate having reduced pitches in wiring of the circuit substrate or electrodes of the electronic component and prevent short circuits between electrode terminals of the electronic component. A connection body has an electronic component connected to a circuit substrate via an anisotropic conductive adhesive agent; the anisotropic conductive adhesive agent contains a binder resin layer in which conductive particles are regularly arranged; an inter-particle distance among the conductive particles in a space between connection electrodes formed on the electronic component being greater than the inter-particle distance among the conductive particles trapped between the connection electrodes and substrate electrodes formed on the circuit substrate.

Ensure conduction between an electronic component and a circuit substrate having reduced pitches in wiring of the circuit substrate or electrodes of the electronic component and prevent short circuits between electrode terminals of the electronic component. A connection body has an electronic component connected to a circuit substrate via an anisotropic conductive adhesive agent; the anisotropic conductive adhesive agent contains a binder resin layer in which conductive particles are regularly arranged; an inter-particle distance among the conductive particles in a space between connection electrodes formed on the electronic component being greater than the inter-particle distance among the conductive particles trapped between the connection electrodes and substrate electrodes formed on the circuit substrate.

A package includes a carrier substrate, a first die, and a second die. The first die includes a first bonding layer, a second bonding layer opposite to the first bonding layer, and an alignment mark embedded in the first bonding layer. The first bonding layer is fusion bonded to the carrier substrate. The second die includes a third bonding layer. The third bonding layer is hybrid bonded to the second bonding layer of the first die.