A semiconductor package includes a first substrate, a first flow channel and a second flow channel. The first flow channel is on the first substrate. The second flow channel is on the first substrate and in fluid communication with the first flow channel. The second flow channel is spaced from an inlet and an outlet of the first flow channel. The first flow channel and the second flow channel constitute a bonding region of the first substrate.

A semiconductor package includes a first substrate, a first flow channel and a second flow channel. The first flow channel is on the first substrate. The second flow channel is on the first substrate and in fluid communication with the first flow channel. The second flow channel is spaced from an inlet and an outlet of the first flow channel. The first flow channel and the second flow channel constitute a bonding region of the first substrate.

A method includes filling a trench formed in a first integrated circuit carrier with temporary bonding material to form a temporary bonding layer. At least one chip is bonded over the temporary bonding layer.

Provided are a package structure and a method of forming the same. The package structure includes a first die, a second die group, an interposer, an underfill layer, a thermal interface material (TIM), and an adhesive pattern. The first die and the second die group are disposed side by side on the interposer. The underfill layer is disposed between the first die and the second die group. The adhesive pattern at least overlay the underfill layer between the first die and the second die group. The TIM has a bottom surface being in direct contact with the first die, the second die group, and the adhesive pattern. The adhesive pattern separates the underfill layer from the TIM.

Provided are a package structure and a method of forming the same. The package structure includes a first die, a second die group, an interposer, an underfill layer, a thermal interface material (TIM), and an adhesive pattern. The first die and the second die group are disposed side by side on the interposer. The underfill layer is disposed between the first die and the second die group. The adhesive pattern at least overlay the underfill layer between the first die and the second die group. The TIM has a bottom surface being in direct contact with the first die, the second die group, and the adhesive pattern. The adhesive pattern separates the underfill layer from the TIM.

Provided are integrated circuit packages and methods of forming the same. An integrated circuit package includes at least one first die, a plurality of bumps, a second die and a dielectric layer. The bumps are electrically connected to the at least one first die at a first side of the at least one first die. The second die is electrically connected to the at least one first die at a second side of the at least one first die. The second side is opposite to the first side of the at least one first die. The dielectric layer is disposed between the at least one first die and the second die and covers a sidewall of the at least one first die.

Provided are integrated circuit packages and methods of forming the same. An integrated circuit package includes at least one first die, a plurality of bumps, a second die and a dielectric layer. The bumps are electrically connected to the at least one first die at a first side of the at least one first die. The second die is electrically connected to the at least one first die at a second side of the at least one first die. The second side is opposite to the first side of the at least one first die. The dielectric layer is disposed between the at least one first die and the second die and covers a sidewall of the at least one first die.

A semiconductor package structure and a method for manufacturing a semiconductor package structure are provided. The semiconductor package structure includes a carrier, a first encapsulant, and an interposer. The first encapsulant is on the carrier and defines a cavity. The interposer is disposed between the first encapsulant and the cavity. The first encapsulant covers a portion of the interposer.

A semiconductor package may include a semiconductor chip on a package substrate. The semiconductor package may include a plurality of conductive connections connecting the semiconductor chip to the package substrate may be disposed, a plurality of towers which are apart from one another and each include a plurality of memory chips may be disposed, wherein a lowermost memory chip of each of the plurality of towers overlaps the semiconductor chip from a top-down view. The semiconductor package further includes a plurality of adhesive layers be attached between the lowermost memory chip of each of the plurality of towers and the semiconductor chip.

A semiconductor package may include a semiconductor chip on a package substrate. The semiconductor package may include a plurality of conductive connections connecting the semiconductor chip to the package substrate may be disposed, a plurality of towers which are apart from one another and each include a plurality of memory chips may be disposed, wherein a lowermost memory chip of each of the plurality of towers overlaps the semiconductor chip from a top-down view. The semiconductor package further includes a plurality of adhesive layers be attached between the lowermost memory chip of each of the plurality of towers and the semiconductor chip.