A method of directly transferring a first semiconductor device die to a substrate includes loading a wafer tape into a first frame, loading a substrate into a second frame, arranging at least one of the first frame or the second frame such that a surface of the substrate is adjacent to a first side of the wafer tape, and orienting a needle to a position adjacent to a second side of the wafer tape, the needle extending in a direction toward the wafer tape. The method also includes activating a needle actuator connected to the needle to move the needle to a die transfer position at which the needle contacts the second side of the wafer tape to press the first semiconductor device die into contact with the second semiconductor device die.

An intelligent power module and a manufacturing method thereof are provided. The intelligent power module includes a radiator, an insulating layer, a circuit wiring, a circuit component and a metal wire. At least part of a lower surface of the radiator is defined as a heat dissipating area, the heat dissipating area is provided with a heat dissipating corrugation, the insulating layer is provided to an upper surface of the radiator, the circuit wiring is provided to the insulating layer, and the circuit component is provided to the circuit wiring and is connected to the circuit wiring via the metal wire.

Embodiments include an electronic system and methods of forming an electronic system. In an embodiment, the electronic system may include a package substrate and a die coupled to the package substrate. In an embodiment, the electronic system may also include an integrated heat spreader (IHS) that is coupled to the package substrate. In an embodiment the electronic system may further comprise a thermal interface pad between the IHS and the die. In an embodiment the die is thermally coupled to the IHS by a liquid metal thermal interface material (TIM) that contacts the thermal interface pad.

A method of manufacturing a semiconductor device according to an embodiment includes forming a bonding layer containing a metal on a first surface of a first semiconductor substrate having the first surface and a first back surface; bonding the first semiconductor substrate and a second semiconductor substrate having a second surface and a second back surface so that the second surface is in contact with the bonding layer; and forming a coating layer covering the bonding layer on an outer peripheral portion of the second semiconductor substrate.

A method for binding a micro device on a substrate is provided. The method includes forming a conductive pad on the substrate; forming an elevated bonding layer on the conductive pad; lowering a temperature of the elevated bonding layer in an environment comprising a vapor such that at least a portion of the vapor is condensed to form a liquid layer on the elevated bonding layer; disposing the micro device over the elevated bonding layer such that the micro device is in contact with the liquid layer and is gripped by a capillary force produced by the liquid layer between the micro device and the elevated bonding layer, wherein the micro device comprises an electrode facing the elevated bonding layer; and evaporating the liquid layer such that the electrode is bound to the elevated bonding layer and is in electrical connection with the conductive pad.

A bonding structure includes a first layer of first alloy component disposed on a substrate and a first layer of a second alloy component disposed on the first alloy component. The second alloy component has a lower melting temperature than the first alloy component. A second layer of the first alloy component is disposed on the first layer of the second alloy component and a second layer of the second alloy component is disposed on the second layer of the first alloy component.

The invention relates to a method for transferring structures on a host substrate, the method comprising the following steps in sequence: a) supply a temporary substrate comprising two main faces, the temporary substrate being stretchable, the structures being assembled with their front face on the first face; b) stretch the temporary substrate along at least one direction so as to increase the space between the structures along at least one direction, c) a step for transferring the plurality of structures on a host face of a host substrate,

The temporary substrate comprises a matrix made of a stretchable material, and a plurality of inserts on which the structures are assembled, the inserts comprising a material with a Young's Modulus higher than that of the stretchable material.

A display panel and method of manufacture are described. In an embodiment, a display substrate includes a pixel area and a non-pixel area. An array of subpixels and corresponding array of bottom electrodes are in the pixel area. An array of micro LED devices are bonded to the array of bottom electrodes. One or more top electrode layers are formed in electrical contact with the array of micro LED devices. In one embodiment a redundant pair of micro LED devices are bonded to the array of bottom electrodes. In one embodiment, the array of micro LED devices are imaged to detect irregularities.

A display panel and method of manufacture are described. In an embodiment, a display substrate includes a pixel area and a non-pixel area. An array of subpixels and corresponding array of bottom electrodes are in the pixel area. An array of micro LED devices are bonded to the array of bottom electrodes. One or more top electrode layers are formed in electrical contact with the array of micro LED devices. In one embodiment a redundant pair of micro LED devices are bonded to the array of bottom electrodes. In one embodiment, the array of micro LED devices are imaged to detect irregularities.

An apparatus including components to stack semiconductor device die.