The present disclosure relates to a semiconductor chip that includes a substrate, a metal layer, and a number of component portions. Herein, the substrate has a substrate base and a number of protrusions protruding from a bottom surface of the substrate base. The substrate base and the protrusions are formed of a same material. Each of the protrusions has a same height. At least one via hole extends vertically through one protrusion and the substrate base. The metal layer selectively covers exposed surfaces at a backside of the substrate and fully covers inner surfaces of the at least one via hole. The component portions reside over a top surface of the substrate base, such that a certain one of the component portions is electrically coupled to a portion of the metal layer at the top of the at least one via hole.

A method of directly transferring a first semiconductor device die to a substrate includes loading a wafer tape into a first frame, loading a substrate into a second frame, arranging at least one of the first frame or the second frame such that a surface of the substrate is adjacent to a first side of the wafer tape, and orienting a needle to a position adjacent to a second side of the wafer tape, the needle extending in a direction toward the wafer tape. The method also includes activating a needle actuator connected to the needle to move the needle to a die transfer position at which the needle contacts the second side of the wafer tape to press the first semiconductor device die into contact with the second semiconductor device die.

The present invention relates to a system for transferring a micro LED, the system not only releasing a grip force of a transfer head when transferring a micro LED to a substrate but also applying an additional force to the micro LED from below the substrate to attract the micro LED onto the substrate.

The present invention relates to a system for transferring a micro LED, the system not only releasing a grip force of a transfer head when transferring a micro LED to a substrate but also applying an additional force to the micro LED from below the substrate to attract the micro LED onto the substrate.

Provided is a joint structure interposed between a semiconductor element and a substrate, the joint structure including: a Sn phase; Cu alloy particles containing P in an amount of 1 mass % or more and less than 7 mass %; and Ag particles, wherein the Cu alloy particles are each coated with a Cu.sub.6Sn.sub.5 layer, wherein the Ag particles are each coated with a Ag.sub.3Sn layer, wherein the Cu alloy particles and the Ag particles are at least partially bonded to each other through a Cu.sub.10Sn.sub.3 phase, wherein a total of addition amounts of the Cu alloy particles and the Ag particles is 25 mass % or more and less than 65 mass % with respect to the joint structure, and wherein a mass ratio of the addition amount of the Ag particles to the addition amount of the Cu alloy particles is 0.2 or more and less than 1.2.

A method for replacing an element of a display device includes: forming a structure with a first liquid layer between a first micro device and a conductive pad of a substrate in which the first micro device is gripped by a sticking force produced by the first liquid layer; evaporating the first liquid layer such that the first micro device is bound to the substrate; determining if the first micro device is malfunctioned or misplaced; removing the first micro device when the first micro device is malfunctioned or misplaced; forming another structure with a second liquid layer between a second micro device and the conductive pad of the substrate in which the second micro device is gripped by a sticking force produced by the second liquid layer; and evaporating the second liquid layer such that the second micro device is bound to the substrate.

Implementations of a semiconductor device may include a first largest planar surface, a second largest planar surface and a thickness between the first largest planar surface and the second largest planar surface; and one of a permanent die support structure, a temporary die support structure, or any combination thereof coupled to one of the first largest planar surface, the second largest planar surface, the thickness, or any combination thereof. The first largest planar surface, the second largest planar surface, and the thickness may be formed by at least two semiconductor die. The warpage of one of the first largest planar surface or the second largest planar surface may be less than 200 microns.

A display panel and method of manufacture are described. In an embodiment, a display substrate includes a pixel area and a non-pixel area. An array of subpixels and corresponding array of bottom electrodes are in the pixel area. An array of micro LED devices are bonded to the array of bottom electrodes. One or more top electrode layers are formed in electrical contact with the array of micro LED devices. In one embodiment a redundant pair of micro LED devices are bonded to the array of bottom electrodes. In one embodiment, the array of micro LED devices are imaged to detect irregularities.

A display panel and method of manufacture are described. In an embodiment, a display substrate includes a pixel area and a non-pixel area. An array of subpixels and corresponding array of bottom electrodes are in the pixel area. An array of micro LED devices are bonded to the array of bottom electrodes. One or more top electrode layers are formed in electrical contact with the array of micro LED devices. In one embodiment a redundant pair of micro LED devices are bonded to the array of bottom electrodes. In one embodiment, the array of micro LED devices are imaged to detect irregularities.

A light source includes a backplane including electrical circuits fabricated thereon, an array of micro-light emitting diodes (micro-LEDs) bonded to the backplane and configured to emit visible light, and an array of micro-lenses aligned with the array of micro-LEDs and configured to collimate the visible light emitted by the array of micro-LEDs. Each micro-lens of the array of micro-lenses has a plurality of discrete thickness levels. A pitch of the array of micro-lenses is equal to or less than about 5 μm, such as about 2 μm. The pitch of the array of micro-lenses can be the same as or different from the pitch of the array of micro-LEDs.