A semiconductor device module may include a leadframe spacer that provides the functions of both a leadframe and a spacer, while enabling a double-sided cooling configuration. Such a leadframe spacer may include a leadframe surface that provides a die attach pad (DAP) that is shared by at least two semiconductor devices. The leadframe spacer may include at least one downset, where the semiconductor devices may be attached within a recess defined by the at least one downset. A first substrate may be connected to a first side of the leadframe. A second substrate may be connected to downset surfaces of the at least one downset, and positioned for further connection to the semiconductor devices in a double-sided assembly.

A batch soldering method includes providing a first passive device, arranging the first passive device on a first metal region of a substrate with a region of first solder material between the first passive device and the substrate, providing a semiconductor die, arranging the semiconductor die on a second metal region of the substrate with a region of second solder material between the semiconductor die and the substrate, and performing a common soldering step that simultaneously forms a first soldered joint from the region of first solder material and forms a second soldered joint from the region of second solder material. The common soldering step is performed at a soldering temperature such that one or more intermetallic phases form within the second soldered joint, each of the one or more intermetallic phases having a melting point above the second solder material and the soldering temperature.

A tiled light emitting diode (LED) display panel includes multiple flexible back plates arranged in tiles. Each flexible back plate has multiple through holes formed thereon. A pixel array is formed by multiple LEDs on the flexible back plates and collectively defines multiple pixels. Each pixel includes one LED and thin-film transistor (TFT) circuits disposed on a first side of a corresponding flexible back plate. A printed circuit board (PCB) is disposed at a second side of the flexible back plates. A third side of the PCB faces the second side of the flexible back plates and has multiple signal lines formed thereon. The LEDs and the TFT circuits of the pixels are electrically connected to the corresponding signal lines via multiple conductive structures formed in the through holes. A resistance per unit length of each flexible back plates is greater than a resistance per unit length of the PCB.

Described herein are methods of manufacturing dual-sided packaged electronic modules to control the distribution of an under-fill material between one or more components and a packaging substrate. The disclosed technologies include using a dam on a packaging substrate that is configured to prevent or limit the flow of a capillary under-fill material. This can prevent or limit the capillary under-fill material from flowing onto or contacting other components or elements on the packaging substrate, such as solder balls of a ball-grid array. Accordingly, the disclosed technologies control under-fill for dual-sided ball grid array packages using a dam on a packaging substrate.

A semiconductor device is provided. The semiconductor device includes a substrate having a surface. The semiconductor device includes a conductive pad over a portion of the surface. The conductive pad has a curved top surface, and a width of the conductive pad increases toward the substrate. The semiconductor device includes a device over the conductive pad. The semiconductor device includes a solder layer between the device and the conductive pad. The solder layer covers the curved top surface of the conductive pad, and the conductive pad extends into the solder layer.

A printed circuit film includes: a base film including a first film portion extending in a first direction, a second film portion extending in the first direction, and a third film portion extending in the first direction; a plurality of lead wires extending in the second direction and disposed on the first, second, and third film portions, the plurality of lead wires being spaced apart from each other in the first direction; and a bonding member including: a conductive member disposed to overlap the plurality of lead wires on the first film portion; a first non-conductive member disposed to overlap the plurality of lead wires and the second film portion; and a second non-conductive member disposed to overlap the plurality of lead wires and the third film portion, wherein the conductive member is disposed between the first non-conductive member and the second non-conductive member in the second direction.

A method of manufacturing a semiconductor device which includes a plurality of members including a semiconductor element is provided. The method may include disposing one surface of a first member which is one of the plurality of members and one surface of a second member which is another one of the plurality of members opposite to each other with a tin-based (Sn-based) solder material interposed therebetween, and bonding the first member and the second member by melting and solidifying the Sn-based solder material. At least the one surface of the first member may be constituted of a nickel-based (Ni-based) metal, and at least the one surface of the second member may be constituted of copper (Cu).

An electronic device includes: a first semiconductor die having a metal region; a substrate having a plurality of metal regions; a first soldered joint between the metal region of the first semiconductor die and a first metal region of the substrate, the first soldered joint having one or more intermetallic phases throughout the entire soldered joint, each of the one or more intermetallic phases formed from a solder preform diffused into the metal region of the first semiconductor die and the first metal region of the substrate; and a second semiconductor die soldered to the first or different metal region of the substrate.

A dual-side cooling (DSC) semiconductor package includes a first metal-insulator-metal (MIM) substrate having a first insulator layer, first metallic layer, and second metallic layer. A second MIM substrate includes a second insulator layer, third metallic layer, and fourth metallic layer. The third metallic layer includes a first portion having a first contact area and a second portion, electrically isolated from the first portion, having a second contact area. A semiconductor die is coupled with the second metallic layer and is directly coupled with the third metallic layer through one or more solders, sintered layers, electrically conductive tapes, solderable top metal (STM) layers, and/or under bump metal (UBM) layers. The first contact area is electrically coupled with a first electrical contact of the die and the second contact area is electrically coupled with a second electrical contact of the die. The first and fourth metallic layers are exposed through an encapsulant.

A dual-side cooling (DSC) semiconductor package includes a first metal-insulator-metal (MIM) substrate having a first insulator layer, first metallic layer, and second metallic layer. A second MIM substrate includes a second insulator layer, third metallic layer, and fourth metallic layer. The third metallic layer includes a first portion having a first contact area and a second portion, electrically isolated from the first portion, having a second contact area. A semiconductor die is coupled with the second metallic layer and is directly coupled with the third metallic layer through one or more solders, sintered layers, electrically conductive tapes, solderable top metal (STM) layers, and/or under bump metal (UBM) layers. The first contact area is electrically coupled with a first electrical contact of the die and the second contact area is electrically coupled with a second electrical contact of the die. The first and fourth metallic layers are exposed through an encapsulant.