First and second contacts are formed on first and second wafers from disparate first and second conductive materials, at least one of which is subject to surface oxidation when exposed to air. A layer of oxide-inhibiting material is disposed over a bonding surface of the first contact and the first and second wafers are positioned relative to one another such that a bonding surface of the second contact is in physical contact with the layer of oxide-inhibiting material. Thereafter, the first and second contacts and the layer of oxide-inhibiting material are heated to a temperature that renders the first and second contacts and the layer of oxide-inhibiting material to liquid phases such that at least the first and second contacts alloy into a eutectic bond.

First and second contacts are formed on first and second wafers from disparate first and second conductive materials, at least one of which is subject to surface oxidation when exposed to air. A layer of oxide-inhibiting material is disposed over a bonding surface of the first contact and the first and second wafers are positioned relative to one another such that a bonding surface of the second contact is in physical contact with the layer of oxide-inhibiting material. Thereafter, the first and second contacts and the layer of oxide-inhibiting material are heated to a temperature that renders the first and second contacts and the layer of oxide-inhibiting material to liquid phases such that at least the first and second contacts alloy into a eutectic bond.

An electronic component device includes a first lead frame having a first connection terminal and an electronic component. The first connection terminal includes a first metal electrode, a first pad part formed on an upper surface of the first metal electrode and formed by a metal plated layer, and a first metal oxide layer formed on an upper surface of the first metal electrode in a surrounding region of the first pad part so as to surround an outer periphery of the first pad part. The electronic component has a first terminal part provided on its lower surface. The first terminal part of the electronic component is connected to the first pad part of the first connection terminal via a metal joining material.

Described herein methods of manufacturing dual-sided packaged electronic modules that control the distribution of an under-fill material between one or more components and a packaging substrate. The disclosed technologies include under-filling one or more components and deflashing a portion of the under-fill to remove under-fill material prior to attaching solder balls. The deflashing step removes a thin layer of under-fill material that may have coated contact pads for the ball grid array. Because the solder balls are not present during under-fill, there is little capillary action drawing material away from the components being under-filled. This can reduce the frequency of voids under the components being under-filled. Accordingly, the disclosed technologies control under-fill for dual-sided ball grid array packages using under-fill deflash prior to attaching solder balls of the ball grid array.

A metallic interconnection and a semiconductor arrangement including the same are described, wherein a method of manufacturing the same may include: providing a first structure including a first metallic layer having protruding first microstructures; providing a second structure including a second metallic layer having protruding second microstructures; contacting the first and second microstructures to form a mechanical connection between the structures, the mechanical connection being configured to allow fluid penetration; removing one or more non-metallic compounds on the first metallic layer and the second metallic layer with a reducing agent that penetrates the mechanical connection and reacts with the one or more non-metallic compounds; and heating the first metallic layer and the second metallic layer at a temperature causing interdiffusion of the first metallic layer and the second metallic layer to form the metallic interconnection between the structures.

This invention provides a placement area with an enlarged bump pitch while avoiding the risk of underfill void generation in the bump process.

The number of bumps is not changed, but the bump pitch at the center is arranged in parallel with the drying direction of the flip-chip process in the drying direction, and an arrangement area in which n rows are enlarged by +b(m) bump pitch is made, and the chip area is finely adjusted.

According to the invention, with respect to the dry air direction after flux cleaning, the power of the dry air does not change for creating a minute bump enlarged area parallel to the air in the central portion.

Disclosed herein are methods of fabricating a packaged radio-frequency (RF) device. The disclosed methods use an encapsulant on solder balls in combination with a dam or a trench to control the distribution of an under-fill material between one or more components and a packaging substrate. The encapsulant can be used in the ball attach process. The fluxing agent leaves behind a material that encapsulates the base of each solder ball. The encapsulant reduces the tendency of the under-fill material to wick around the solder balls by capillary action which can prevent or limit the capillary under-fill material from flowing onto or contacting other components. The dam or trench aids in retaining the under-fill material within a keep out zone to prevent or limit the under-fill material from contacting other components.

The invention relates to a method for producing a solder connection between a plurality of components (12A, 12B) in a process chamber (74) sealed off from its surroundings by heating and melting solder material (16) which is arranged between the components (12A, 12B) to be connected.

It is proposed that the components (12A, 12B) to be connected are provisionally connected with a bonding material (18) to form a solder group (10) in which the components (12A, 12B) are fixed relative to one another in a joining position.

Described herein are methods of manufacturing dual-sided packaged electronic modules to control the distribution of an under-fill material between one or more components and a packaging substrate. The disclosed technologies include forming a trench in a packaging substrate that is configured to prevent or limit the flow of a capillary under-fill material. This can prevent or limit the capillary under-fill material from flowing onto or contacting other components or elements on the packaging substrate, such as solder balls of a ball-grid array. Accordingly, the disclosed technologies control under-fill for dual-sided ball grid array packages using a trench in a packaging substrate.

Described herein methods of manufacturing dual-sided packaged electronic modules that control the distribution of an under-fill material between one or more components and a packaging substrate. The disclosed technologies include under-filling one or more components and deflashing a portion of the under-fill to remove under-fill material prior to attaching solder balls. The deflashing step removes a thin layer of under-fill material that may have coated contact pads for the ball grid array. Because the solder balls are not present during under-fill, there is little capillary action drawing material away from the components being under-filled. This can reduce the frequency of voids under the components being under-filled. Accordingly, the disclosed technologies control under-fill for dual-sided ball grid array packages using under-fill deflash prior to attaching solder balls of the ball grid array.