A semiconductor package includes a first semiconductor chip stacked on a package substrate in which a first surface of the first semiconductor chip faces the package substrate and a second surface that is opposite to the first surface, a second semiconductor chip stacked on the first semiconductor chip that includes a third surface facing the first semiconductor chip and a fourth surface that is opposite to the third surface, and an integral adhesive structure that substantially continuously fills a first space between the package substrate and the first semiconductor chip and a second space between the first and second semiconductor chips. The integral adhesive structure includes an extension protruding from outer sidewalls of the first and second semiconductor chips. The extension has one continuously convex sidewall between a level of the first surface and a level of the fourth surface.

The disclosure generally relates to methods for manufacturing a filled gap region or cavity between two surfaces forming a device microchip. In one embodiment, the cavity results from two surfaces, for example, a PCB and a chip or two chips. More specifically, the disclosure relates to a method of manufacture and the resulting apparatus having porous underfill to enable rework of the electrical interconnects of a microchip on a multi-chip module. In one embodiment, the disclosure builds on the thermal underfill concept and achieves high thermal conductivity by the use of alumina fillers. Alternatively, other material such as silica filler particles may be selected to render the underfill a poor thermal conductive. In one embodiment, the disclose is concerned with reworkability of the material.

A manufacturing method including supplying a first substrate including a first face designated front face, the front face being made of a III-V type semiconductor, supplying a second substrate, forming a radical oxide layer on the front face of the first substrate by executing a radical oxidation, assembling, by a step of direct bonding, the first substrate and the second substrate so as to form an assembly including the radical oxide layer intercalated between the first and second substrates, executing a heat treatment intended to reinforce the assembly interface, and making disappear, at least partially, the radical oxide layer.

A method of manufacturing a semiconductor device is provided. The method includes securing a die to a die paddle with solder and securing a clip to the die with solder to form a first subassembly. The method further includes heating the first subassembly to at least the melting temperature of the solder, then subsequently removing at least some of the solder from the die paddle in a region adjacent the die to expose the die paddle in that region. The method further includes moulding a casing on to the first subassembly so that the casing at least partly surrounds the die, the die paddle, and the clip.

A semiconductor package includes a first semiconductor chip stacked on a package substrate in which a first surface of the first semiconductor chip faces the package substrate and a second surface that is opposite to the first surface, a second semiconductor chip stacked on the first semiconductor chip that includes a third surface facing the first semiconductor chip and a fourth surface that is opposite to the third surface, and an integral adhesive structure that substantially continuously fills a first space between the package substrate and the first semiconductor chip and a second space between the first and second semiconductor chips. The integral adhesive structure includes an extension protruding from outer sidewalls of the first and second semiconductor chips. The extension has one continuously convex sidewall between a level of the first surface and a level of the fourth surface.

A method for fabricating a semiconductor package includes applying polymer-based solder paste onto a substrate; bringing a plurality of solder bumps on a semiconductor die into contact with the polymer-based solder paste on the substrate; reflowing the polymer-based solder paste to form a plurality of solder joints between the substrate and the semiconductor die, wherein a post-soldering residue is produced to encapsulate a lower portion of each solder joint; and applying an underfill between the substrate and the semiconductor die to encapsulate an upper portion of the solder joint.

A semiconductor device includes a lead frame, a first solder layer, a semiconductor element, and a sealing resin layer. The first solder layer is located on the lead frame. The lead frame includes a first base part, a first barrier metal layer, and a first adhesion layer. The first barrier metal layer is located on the first base part. The first barrier metal layer includes a first solder region and a first sealing region. The first barrier metal layer includes a metal having a diffusion rate into solder that is less than the diffusion rate into solder of copper. The first adhesion layer is located on the first sealing region. The first adhesion layer includes copper. The first solder layer is located on the first solder region. The sealing resin layer is located on the semiconductor element and on the first adhesion layer.

A semiconductor device including: a die paddle having an upper surface; a solder layer disposed on the upper surface of the die paddle; and a die disposed on the solder layer, so that the solder layer is between the die paddle and the die; the solder layer includes a plurality of spacers configured to be, during production of the semiconductor device prior to hardening of the solder layer, movable in relation to the die paddle; and the die paddle includes a plurality of recesses in the upper surface of the die paddle, and the plurality of recesses is configured to receive the plurality of spacers, so that the plurality of spacers is embedded within the plurality of recesses.