A method of making a micro-module structure comprises providing a substrate, the substrate having a substrate surface and comprising a substrate post protruding from the substrate surface. A component is disposed on the substrate post, the component having a component top side and a component bottom side opposite the component top side, the component bottom side disposed on the substrate post. The component extends over at least one edge of the substrate post. One or more component electrodes are disposed on the component.

A semiconductor device is vertically mounted on a medium such as a printed circuit board (PCB). The semiconductor device comprises a block of semiconductor dies, mounted in a vertical stack without offset. Once formed and encapsulated, side grooves may be formed in the device exposing electrical conductors of each die within the device. The electrical conductors exposed in the grooves mount to electrical contacts on the medium to electrically couple the semiconductor device to the medium.

A method for manufacturing a semiconductor device includes bonding a supporting substrate and a first surface of a semiconductor substrate via a bonding layer, processing a second surface of the supporting substrate, opposite to the first surface, to shape the semiconductor substrate into a thin film. After shaping the semiconductor substrate into a thin film, polishing a part of the bonding layer formed at a beveled portion of the supporting substrate or the semiconductor substrate with a first polishing plane to remove the part of the bonding layera A33fter polishing the part of the bonding layer, polishing a remaining part of the bonding layer formed at the beveled portion of the supporting substrate or the semiconductor substrate with a second polishing plane different from the first polishing plane to remove the remaining part of the bonding layer.

A semiconductor package and a manufacturing method thereof are provided. The semiconductor package includes a die, an underfill layer, a patterned dielectric layer and a plurality of conductive terminals. The die has a front surface and a back surface opposite to the front surface. The underfill layer encapsulates the die, wherein a surface of the underfill layer and the back surface of the die are substantially coplanar to one another. The patterned dielectric layer is disposed on the back surface of the die. The conductive terminals are disposed on and in contact with a surface of the patterned dielectric layer and partially embedded in the patterned dielectric layer to be in contact with the die, wherein a portion of the surface of the patterned dielectric layer that directly under each of the conductive terminals is substantially parallel with the back surface of the die.

A method for manufacturing a semiconductor device includes stacking, on a package substrate, first semiconductor chips. Each of the first semiconductor chips includes a first adhesive film. The method includes stacking, respectively on the first semiconductor chips, second semiconductor chips. Each of the second semiconductor chips includes a second adhesive film. The method includes compressing the first and second adhesive films to form an adhesive structure. The adhesive structure includes an extension disposed on sidewalls of the first and second semiconductor chips. The method includes removing the extension. The method includes forming a first molding layer substantially covering the first and second semiconductor chips. The method includes performing a cutting process on the package substrate between the first and second semiconductor chips to form a plurality of semiconductor packages each including at least one of the first semiconductor chips and at least one of the second semiconductor chips.

A method for manufacturing a semiconductor device includes stacking, on a package substrate, first semiconductor chips. Each of the first semiconductor chips includes a first adhesive film. The method includes stacking, respectively on the first semiconductor chips, second semiconductor chips. Each of the second semiconductor chips includes a second adhesive film. The method includes compressing the first and second adhesive films to form an adhesive structure. The adhesive structure includes an extension disposed on sidewalls of the first and second semiconductor chips. The method includes removing the extension. The method includes forming a first molding layer substantially covering the first and second semiconductor chips. The method includes performing a cutting process on the package substrate between the first and second semiconductor chips to form a plurality of semiconductor packages each including at least one of the first semiconductor chips and at least one of the second semiconductor chips.

Provided is an inkjet adhesive which is applied using an inkjet device, wherein the adhesive can suppress generation of voids in the adhesive layer and, after bonding, can enhance adhesiveness, moisture-resistant adhesion reliability, and cooling/heating cycle reliability. An inkjet adhesive according to the present invention comprises a photocurable compound, a photo-radical initiator, a thermosetting compound having one or more cyclic ether groups or cyclic thioether groups, and a compound capable of reacting with the thermosetting compound, and the compound capable of reacting with the thermosetting compound contains aromatic amine.

Provided is an inkjet adhesive which is applied using an inkjet device, wherein the adhesive can suppress generation of voids in the adhesive layer and, after bonding, can enhance adhesiveness, moisture-resistant adhesion reliability, and cooling/heating cycle reliability. An inkjet adhesive according to the present invention comprises a photocurable compound, a photo-radical initiator, a thermosetting compound having one or more cyclic ether groups or cyclic thioether groups, and a compound capable of reacting with the thermosetting compound, and the compound capable of reacting with the thermosetting compound contains aromatic amine.

Provided is a semiconductor package including: at least one semiconductor device on a first substrate; a non-conductive film (NCF) on the at least one semiconductor device and comprising an irreversible thermochromic pigment; and a molding member on the at least one semiconductor device in a lateral direction, wherein a content of the irreversible thermochromic pigment in the NCF is about 0.1 wt % to about 5 wt % with respect to a weight of the NCF.

Provided is an inkjet adhesive which is applied using an inkjet device, wherein the adhesive can suppress generation of voids in the adhesive layer and, after bonding, can reduce an outgas at the time of being exposed to high temperatures, and can enhance moisture-resistant reliability. An inkjet adhesive according to the present invention comprises a first photocurable compound having one (meth)acrylol group, a second photocurable compound having two or more (meth)acrylol groups, a photo-radical initiator, a thermosetting compound having one or more cyclic ether groups or cyclic thioether groups, and a compound capable of reacting with the thermosetting compound, and the first photocurable compound contains alkyl (meth)acrylate having 8 to 21 carbon atoms.