A power module providing an improved manufacture yield and having an ensured stable joint strength and accordingly improved reliability is provided. The power module includes: a base portion having one surface on which an electrode portion is formed; a conductor portion disposed to face the one surface of the base portion on which the electrode portion is formed, for making electrical connection with the outside; and an interconnect portion connected to the electrode portion formed on the one surface of the base portion and to the surface of the conductor portion facing the one surface of the base portion for electrically connecting the electrode portion to the conductor portion.

A power module providing an improved manufacture yield and having an ensured stable joint strength and accordingly improved reliability is provided. The power module includes: a base portion having one surface on which an electrode portion is formed; a conductor portion disposed to face the one surface of the base portion on which the electrode portion is formed, for making electrical connection with the outside; and an interconnect portion connected to the electrode portion formed on the one surface of the base portion and to the surface of the conductor portion facing the one surface of the base portion for electrically connecting the electrode portion to the conductor portion.

In a power-module substrate unit, a circuit layer is structured by a plurality of small circuit layers; a ceramic substrate layer is structured by at least one plate; the small circuit layers are formed to have a layered structure having a first aluminum layer bonded on one surface of the ceramic substrate layer and a first copper layer bonded on the first aluminum layer by solid diffusion; a radiation plate is made of copper or copper alloy; the metal layer and the radiation plate are bonded by solid diffusion.

In one example, a semiconductor device includes a substrate that comprises a substrate conductor material. An electronic component has a first component terminal that comprises a first component terminal conductor material and a second component terminal that comprises a second component terminal conductor material. An interconnect comprises an interconnect conductor material, a component end, and a substrate end. The second component terminal is attached to the substrate with a first intermetallic bond, the component end of the interconnect is attached to the first component terminal with a second intermetallic bond, and the substrate end of the interconnect is attached to the substrate with a third intermetallic bond. Other examples and related methods are also disclosed herein.

A semiconductor device according to an embodiment is a semiconductor device in which a semiconductor chip mounted on a chip mounting part is sealed by resin and a first member is fixed to a chip mounting surface side between a peripheral portion of the semiconductor chip and a peripheral portion of the chip mounting part. Also, the first member is sealed by the resin. Also, a length of the first part of the chip mounting part in the first direction is larger than a length of the semiconductor chip in the first direction, in a plan view.

In the semiconductor module according to the present invention, a conducting member which is used to electrically connect a semiconductor element arranged on a substrate or a bus bar with another electronic component is provided with a structure having flexibility capable of, in a junction with the semiconductor element, reducing the thermal stress due to difference in a coefficient of linear expansion between the conducting member and the semiconductor element, and absorbing dimensional error in objects to be connected. Therefore, the semiconductor module achieves both increased current capacity of the semiconductor device and improved reliability of the semiconductor module.

In the semiconductor module according to the present invention, a conducting member which is used to electrically connect a semiconductor element arranged on a substrate or a bus bar with another electronic component is provided with a structure having flexibility capable of, in a junction with the semiconductor element, reducing the thermal stress due to difference in a coefficient of linear expansion between the conducting member and the semiconductor element, and absorbing dimensional error in objects to be connected. Therefore, the semiconductor module achieves both increased current capacity of the semiconductor device and improved reliability of the semiconductor module.

The embodiments of the present disclosure relate to a power package module of multiple power chips and a method of manufacturing a power chip unit. The power package module of multiple power chips includes: a power chip unit including at least two power chips placed in parallel and a bonding part bonding the two power chips; a substrate supporting the power chip unit and including a metal layer electronically connecting with the power chip unit; and a sealing layer isolating the power chip unit on the substrate from surroundings to seal the power chip unit; the bonding part and the sealing layer are made from different insulated material, the distance of a gap between the two power chips placed in parallel is smaller than or equal to a preset width, and the bonding part is filled in the gap, insulatedly bonding the two power chips placed in parallel.

A metal base substrate of the present invention includes a copper plate made of copper, a metal layer that is formed on the copper plate and is made of a metal different from the copper, an insulating resin sheet that is formed by bonding a sheet made of an insulating resin onto the metal layer, and a circuit pattern formed on the insulating resin sheet.

A metal base substrate of the present invention includes a copper plate made of copper, a metal layer that is formed on the copper plate and is made of a metal different from the copper, an insulating resin sheet that is formed by bonding a sheet made of an insulating resin onto the metal layer, and a circuit pattern formed on the insulating resin sheet.