An electronic module has a first substrate 11; a second substrate 21 provided in one side of the first substrate 11; and a chip module 100 provided between the first substrate 11 and the second substrate 21. The chip module 100 has an electronic element 13, 23 and a connecting body 60, 70, 80 electrically connected to the electronic element 13, 23. The electronic element 13, 23 extends along a first direction that is a thickness direction of the electronic module.

A method of manufacturing a semiconductor device includes: forming a first electrode and a second electrode on an insulating layer so as to be apart from each other; forming a barrier made of same material as a metal terminal on a peripheral portion of an ultrasonic bonding portion of the metal terminal; and applying pressing force and ultrasonic vibration to the ultrasonic bonding portion of the metal terminal by using an ultrasonic tool to ultrasonically bond the metal terminal to the first electrode.

An electrode terminal includes a body and a first bonding part. The body includes a first metal material. Then, the first bonding part is bonded to one end of the body, and includes a second metal material which is a clad material other than the first metal material. The first bonding part is ultrasonically bondable to a first bonded member. An elastic part which is elastically deformable is provided between the one end of the body and the other end of the body.

An electronic module has a first substrate 11, a first conductor layer 12 that is provided on one side of the first substrate 11, a first electronic element 13 that is provided on one side of the first conductor layer 12, a second electronic element 23 that is provided on one side of the first electronic element 23, and a second connecting body 70 that has a second head part 71 provided on one side of the second electronic element 23 and an extending part 75 extending from the second head part 71 to the other side and abutting against the first substrate 11 or the first conductor layer 12.

An electronic module comprises a substrate 11, 21, an other-side electronic component 18, 23 provided on the other side of the substrate 11, 21, a one-side electronic component 13, 28 provided on one side of the substrate 11, 21 and a connecting terminal 115, 125 having an other-side extending part 119a, 129a extending to circumferential outside of the substrate 11, 21 on the other side of the substrate 11, 21, a one-side extending part 119b, 129b extending to circumferential outside of the substrate 11, 21 on one side of the substrate 11, 21, and a connecting part 118, 128 connecting the other-side extending part 119a, 129a with the one-side extending part 119b, 129b at the circumferential outside of the substrate 11, 21.

A semiconductor device includes: two conductive members; a semiconductor element bonded to one of the two conductive members; and a relay terminal bonded to the two conductive members. The relay terminal has a first strip portion and a second strip portion that are bonded to the two conductive members, and a connecting portion that connects the first strip portion and the second strip portion. The first strip portion has a first side. The connecting portion has a first intermediate side, and a first connecting side connecting the first side and the first intermediate side. As viewed in the thickness direction, the first connecting side is located away from a first virtual intersection that is an intersection of a first virtual line overlapping with the first side and a second virtual line overlapping with the first intermediate side.

A semiconductor manufacturing apparatus includes a tool performing joining by ultrasonic vibration while applying a load to a metal terminal. The tool includes a plurality of protrusions arranged along the X-axis direction and the Y-axis direction on a pressing surface in a rectangular shape at a tip end portion facing the metal terminal. The intervals between the plurality of protrusions are equal in the X direction of the pressing surface, and are larger on the inner peripheral side than on the outer peripheral side in the Y-axis direction of the pressing surface.

A semiconductor manufacturing apparatus includes a tool performing joining by ultrasonic vibration while applying a load to a metal terminal. The tool includes a plurality of protrusions arranged along the X-axis direction and the Y-axis direction on a pressing surface in a rectangular shape at a tip end portion facing the metal terminal. The intervals between the plurality of protrusions are equal in the X direction of the pressing surface, and are larger on the inner peripheral side than on the outer peripheral side in the Y-axis direction of the pressing surface.

A package includes a circuit that includes at least one active area and at least one secondary device area, a support configured to support the circuit, and a die attach material. The circuit being mounted on the support using the die attach material and the die attach material including at least one channel configured to allow gases generated during curing of the die attach material to be released from the die attach material.

A method for fabricating a semiconductor device includes providing a semiconductor die, arranging an electrical connector over the semiconductor die, the electrical connector including a conductive core, an absorbing feature arranged on a first side of the conductive core, and a solder layer arranged on a second side of the conductive core, opposite the first side and facing the semiconductor die, and soldering the electrical connector onto the semiconductor die by heating the solder layer with a laser, wherein the laser irradiates the absorbing feature and absorbed energy is transferred from the absorbing feature through the conductive core to the solder layer.