A source pad electrically coupled with a source of a MOSFET of a semiconductor chip and located at a position below a lead in cross-sectional view is electrically connected with the lead for source via a conductive member bonded to the source pad and a wire bonded to the conductive member.

Provided is a semiconductor device having a structure of directly bonding a lead electrode to a semiconductor element through a bonding layer, in which whether the bonding layer has a predetermined thickness can be checked through a visual inspection. The semiconductor device includes: a semiconductor element mounted on an insulating substrate or a lead frame; a bonding layer on the semiconductor element; and a lead electrode including a main body plate electrically connected to an external electrode, and a cantilevered plate having one end being connected to the main body plate as a connection part, and being cut from the main body plate, wherein the cantilevered plate is bent in a direction of the semiconductor element with respect to the main body plate, and has an other end embedded in the bonding layer, and the bonding layer covers at least a part of an upper surface of the cantilevered plate.