Patent classifications
H
H01
H01L
2224/00
H01L2224/80
H01L2224/85
H01L2224/85009
H01L2224/8501
H01L2224/85017
H01L2224/85017
Ion-ion plasma atomic layer etch process
11101113
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2021-08-24
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A method of etching uses an overhead electron beam source that generates an ion-ion plasma for performing an atomic layer etch process.
ION-ION PLASMA ATOMIC LAYER ETCH PROCESS
20200035454
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2020-01-30
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A method of etching uses an overhead electron beam source that generates an ion-ion plasma for performing an atomic layer etch process.
Ion-ion plasma atomic layer etch process and reactor
10475626
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2019-11-12
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A reactor with an overhead electron beam source is capable of generating an ion-ion plasma for performing an atomic layer etch process.
ION-ION PLASMA ATOMIC LAYER ETCH PROCESS AND REACTOR
20180261429
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2018-09-13
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A reactor with an overhead electron beam source is capable of generating an ion-ion plasma for performing an atomic layer etch process.