H01L2224/85035

DUAL HEAD CAPILLARY DESIGN FOR VERTICAL WIRE BOND
20200118961 · 2020-04-16 ·

Embodiments disclosed herein include wire bonds and tools for forming wire bonds. In an embodiment, a wire bond may comprise a first attachment ball, and a first wire having a first portion contacting the first attachment ball and a second portion. In an embodiment, the wire bond may further comprise a second attachment ball, and a second wire having a first portion contacting the second attachment ball and a second portion. In an embodiment, the second portion of the first wire is connected to the second portion of the second wire.

BONDING WIRE, SEMICONDUCTOR PACKAGE INCLUDING THE SAME, AND WIRE BONDING METHOD
20200105708 · 2020-04-02 · ·

A bonding wire for connecting a first pad to a second pad is provided. The bonding wire includes a ball part bonded to the first pad, a neck part formed on the ball part, and a wire part extending from the neck part to the second pad. Less than an entire portion of a top surface of the neck part is covered by the wire part, and the wire part is in contact with the neck part, the ball part, and the first pad.

Semiconductor Device and Method of Manufacturing the Same

A semiconductor device includes a single lead frame, a semiconductor element, and a mold material. The semiconductor element is joined onto one main surface of the lead frame. The lead frame includes a die-attach portion, a signal terminal portion, and a ground terminal portion. The die-attach portion, the signal terminal portion, and the ground terminal portion are disposed directly below the mold material so as to be arranged in a direction along one main surface. A groove portion is provided by partially removing the lead frame so as to allow the groove portion to pass therethrough, the groove portion being provided between the die-attach portion and the ground terminal portion adjacent to each other in the lead frame and between the signal terminal portion and the ground terminal portion adjacent to each other in the lead frame.

PACKAGE STRUCTURE AND METHOD FOR FABRICATING THE SAME

The present disclosure provides a package structure, including a semiconductor chip having a magnetic device, wherein the semiconductor chip includes a first surface perpendicular to a thickness direction of the semiconductor chip, a second surface opposite to the first surface, and a third surface connecting the first surface and the second surface, and a first magnetic field shielding at least partially surrounding the third surface.

Dual head capillary design for vertical wire bond
11894334 · 2024-02-06 · ·

Embodiments disclosed herein include wire bonds and tools for forming wire bonds. In an embodiment, a wire bond may comprise a first attachment ball, and a first wire having a first portion contacting the first attachment ball and a second portion. In an embodiment, the wire bond may further comprise a second attachment ball, and a second wire having a first portion contacting the second attachment ball and a second portion. In an embodiment, the second portion of the first wire is connected to the second portion of the second wire.

APPARATUS AND METHOD FOR WIRE PREPARATION

A wire bonding tool for bonding a micro-coaxial wire to a bonding surface includes an electrical-energy application mechanism configured to apply electrical-energy to remove a portion of an electrically conductive shield layer of the micro-coaxial wire to expose a portion of an insulating layer of the micro-coaxial wire, a thermal-energy application mechanism configured to apply thermal-energy to the micro-coaxial wire to remove the exposed portion of the insulating layer of the micro-coaxial wire to expose a portion of a core wire of the micro-coaxial wire, and a bonding head configured to bond the exposed portion of the core wire of the micro-coaxial wire to the bonding surface.

Semiconductor device and method for manufacturing the same
10468376 · 2019-11-05 · ·

Disclosed is a semiconductor device that includes a semiconductor chip; bonding pads provided to the semiconductor chip; a plurality of lead terminals arranged around the semiconductor chip; a plurality of bonding wires that electrically connect the semiconductor chip with the plurality of lead terminals; and a resin encapsulant which encapsulates the semiconductor chip and the bonding wires, the semiconductor device further having an insulating material interposed at the interface between the bonding wires and the resin encapsulant, and the insulating material containing a nanometer-sized insulating particle and amorphous silica.

SEMICONDUCTOR DEVICES HAVING WIRE BONDING STRUCTURES AND METHODS OF FABRICATING THE SAME

A semiconductor device includes a first device having a first pad; a second device having a second pad; and a bonding wire electrically connecting the first device and the second device to each other via the first pad and the second pad. The bonding wire includes: a first bonding structure provided at a first end of the bonding wire, electrically connected to the first device and includes: a first ball bonding region; and a first stitch bonding region; and a second bonding structure provided at a second end opposite of the first end of the bonding wire and electrically connected to the second device.

SEMICONDUCTOR DEVICE AND METHOD FOR MANUFACTURING SAME
20190096847 · 2019-03-28 · ·

A method for manufacturing a semiconductor device includes: a first bonding process including bonding, at a first bonding point, a tip of a wire held by a capillary; a first lifting process including moving the capillary upward; a first reverse process including moving the capillary in a direction that includes a component in a first direction that is from a second bonding point toward the first bonding point; a second lifting process including moving the capillary upward; a second reverse process including moving the capillary in the first direction; a third lifting process including moving the capillary upward; a forward process including moving the capillary toward the second bonding point; and a second bonding process including bonding the wire at the second bonding point. A movement distance of the capillary in the first lifting process is not less than a movement distance of the capillary in the second lifting process.

STRUCTURES AND METHODS FOR CAPACITIVE ISOLATION DEVICES

Described examples include a packaged device including a first object and a second object spaced from each other by a gap, each object having a first surface and an opposite second surface, the first surfaces of the first object and the second object including first terminals. A structure includes at least two conductors embedded in a dielectric casing consolidating a configuration and organization of the at least two conductors, the at least two conductors having end portions un-embedded by the dielectric casing. An end portion of at least one of the at least two conductors is electrically connected to a first terminal of the first object, and an opposite end portion of the at least one of the at least two conductors is electrically connected to a respective first terminal of the second object, the at least two conductors electrically connecting the first object and the second object.