A method of fabricating a package structure including at least the following steps is provided. A carrier is provided. A first package is formed on the carrier. The first package is formed by at least the following steps. A first redistribution layer is formed on the carrier, wherein the first redistribution layer has a first surface and a second surface opposite to the first surface. A semiconductor die is bonded on the first surface of the first redistribution layer. The semiconductor die is electrically connected to the first redistribution layer through a plurality of conductive wires. An insulating material is formed to encapsulate the semiconductor die and the plurality of conductive wires. A thinning process is performed to obtain an insulating encapsulant by reducing a thickness of the insulating material until a portion of each of the conductive wires is removed to form a plurality of conductive wire segments, wherein the semiconductor die is electrically insulated from the first redistribution layer after the thinning process. A second redistribution layer is formed on a top surface of the insulating encapsulant, and over the semiconductor die. The second redistribution layer is electrically connected to the first redistribution layer and to the semiconductor die by the plurality of conductive wire segments.

The present invention relates to an integrated circuit package comprising at least one substrate, each substrate including at least one layer, at least one semiconductor die, at least one terminal, and an antenna located in the integrated circuit package, but not on said at least one semiconductor die. The conducting pattern comprises a curve having at least five sections or segments, at least three of the sections or segments being shorter than one-tenth of the longest free-space operating wavelength of the antenna, each of the five sections or segments forming a pair of angles with each adjacent segment or section, wherein the smaller angle of each of the four pairs of angles between sections or segments is less than 180 (i.e., no pair of sections or segments define a longer straight segment), wherein at least two of the angles are less than 115, wherein at least two of the angles are not equal, and wherein the curve fits inside a rectangular area the longest edge of which is shorter than one-fifth of the longest free-space operating wavelength of the antenna.

A method to produce a substrate suitable for diffusion bonding is described. A flexible dielectric substrate is provided. An alkaline modification is applied to the dielectric substrate to form a polyamic acid (PAA) anchoring layer on a surface of the dielectric substrate. A NiP seed layer is electrolessly plated on the PAA layer. Copper traces are plated within a photoresist pattern on the NiP seed layer. A surface finishing layer is electrolytically plated on the copper traces. The photoresist pattern and NiP seed layer not covered by the copper traces are removed to complete the substrate suitable for diffusion bonding.

A heat dissipating assembly including a layered stack of materials with a highly thermally conductive path for cooling a circuit, the stack including a structurally isolated material having a high coefficient of thermal expansion connected between materials having low coefficients of thermal expansion.

A bonding wire for connecting a first pad to a second pad is provided. The bonding wire includes a ball part bonded to the first pad, a neck part formed on the ball part, and a wire part extending from the neck part to the second pad. Less than an entire portion of a top surface of the neck part is covered by the wire part, and the wire part is in contact with the neck part, the ball part, and the first pad.

A bonding wire for connecting a first pad to a second pad is provided. The bonding wire includes a ball part bonded to the first pad, a neck part formed on the ball part, and a wire part extending from the neck part to the second pad. Less than an entire portion of a top surface of the neck part is covered by the wire part, and the wire part is in contact with the neck part, the ball part, and the first pad.

A semiconductor device has a first semiconductor die including a first protection circuit. A second semiconductor die including a second protection circuit is disposed over the first semiconductor die. A portion of the first semiconductor die and second semiconductor die is removed to reduce die thickness. An interconnect structure is formed to commonly connect the first protection circuit and second protection circuit. A transient condition incident to the interconnect structure is collectively discharged through the first protection circuit and second protection circuit. Any number of semiconductor die with protection circuits can be stacked and interconnected via the interconnect structure to increase the ESD current discharge capability. The die stacking can be achieved by disposing a first semiconductor wafer over a second semiconductor wafer and then singulating the wafers. Alternatively, die-to-wafer or die-to-die assembly is used.

A circuit element is formed on a substrate made of a compound semiconductor. A bonding pad is disposed on the circuit element so as to at least partially overlap the circuit element. The bonding pad includes a first metal film and a second metal film formed on the first metal film. A metal material of the second metal film has a higher Young's modulus than a metal material of the first metal film.

A package structure including first and second packages is provided. The first package includes a semiconductor die, an insulating encapsulant, a first redistribution layer, a second redistribution layer, and a plurality of conductive wire segments. The semiconductor die has an active surface and a back surface. The insulating encapsulant encapsulates the semiconductor die. The first redistribution layer is disposed on the back surface of the semiconductor die and a bottom surface of the insulating encapsulant. The first redistribution layer has a first surface and a second surface opposite to the first surface. The second redistribution layer is disposed on the active surface of the semiconductor die. The plurality of conductive wire segments electrically connects the semiconductor die to the second redistribution layer and the first redistribution layer to the second redistribution layer. The second package is stacked on the second surface of the first redistribution layer over the first package.

A package structure including first and second packages is provided. The first package includes a semiconductor die, an insulating encapsulant, a first redistribution layer, a second redistribution layer, and a plurality of conductive wire segments. The semiconductor die has an active surface and a back surface. The insulating encapsulant encapsulates the semiconductor die. The first redistribution layer is disposed on the back surface of the semiconductor die and a bottom surface of the insulating encapsulant. The first redistribution layer has a first surface and a second surface opposite to the first surface. The second redistribution layer is disposed on the active surface of the semiconductor die. The plurality of conductive wire segments electrically connects the semiconductor die to the second redistribution layer and the first redistribution layer to the second redistribution layer. The second package is stacked on the second surface of the first redistribution layer over the first package.