A semiconductor package includes a pad and leads, the pad and leads including a base metal predominantly including copper, a first plated metal layer predominantly including nickel in contact with the base metal, and a second plated metal layer predominantly including silver in contact with the first plated metal layer. The first plated metal layer has a first plated metal layer thickness of 0.1 to 5 microns, and the second plated metal layer has a second plated metal layer thickness of 0.2 to 5 microns. The semiconductor package further includes an adhesion promotion coating predominantly including silver oxide in contact with the second plated metal layer opposite the first plated metal layer, a semiconductor die mounted on the pad, a wire bond extending between the semiconductor die and a lead of the leads, and a mold compound covering the semiconductor die and the wire bond.

A semiconductor device has a first semiconductor die including a first protection circuit. A second semiconductor die including a second protection circuit is disposed over the first semiconductor die. A portion of the first semiconductor die and second semiconductor die is removed to reduce die thickness. An interconnect structure is formed to commonly connect the first protection circuit and second protection circuit. A transient condition incident to the interconnect structure is collectively discharged through the first protection circuit and second protection circuit. Any number of semiconductor die with protection circuits can be stacked and interconnected via the interconnect structure to increase the ESD current discharge capability. The die stacking can be achieved by disposing a first semiconductor wafer over a second semiconductor wafer and then singulating the wafers. Alternatively, die-to-wafer or die-to-die assembly is used.

A bonding arrangement comprising a bonding tool, having a tool shank which is designed to extend in a longitudinal direction of the tool, and a tool tip which connects to the tool shank. A first end side of the bonding tool is provided on the tool tip, which is designed to come into contact with a connection part. A second end side of the bonding tool is provided on the tool shank. The bonding tool has a casing surface connecting the first end side and the second end side, said bonding arrangement comprising a laser generator for providing a laser beam and comprising a light guide designed to guide the laser beam to the bonding tool. A functional recess is formed on the bonding tool on the casing side and the light guide is associated with the bonding too on the casing side from the outside and at a distance.

Apparatus and method for tool mark free stich bonding. In some embodiments, a method for wire bonding can include feeding a wire through a capillary tip and attaching a first end of the wire to a first location, thereby forming a ball bond. The method can further include moving the capillary tip towards a second location while the wire feeds out of the capillary tip. The method can further include attaching a second end of the wire to the second location while preventing contact between the capillary tip and the second location, thereby forming a stitch bond without a tool mark at the second location.

A method of forming a wire interconnect structure includes the steps of: (a) forming a wire bond at a bonding location on a substrate using a wire bonding tool; (b) extending a length of wire, continuous with the wire bond, to a position above the wire bond; (c) moving the wire bonding tool to contact the length of wire, at a position along the length of wire, to partially sever the length of wire at the position along the length of wire; and (d) separating the length of wire from a wire supply at the position along the length of wire, thereby providing a wire interconnect structure bonded to the bonding location.

A bonding apparatus is provided. This bonding apparatus uses images captured by an imaging apparatus and performs a packaging process for a semiconductor chip and additional processes other than the packaging process. The bonding apparatus is provided with: an aperture switching mechanism provided in an optical system of the imaging apparatus and capable of switching between a first aperture and a second aperture that has an aperture hole diameter greater than that of the first aperture; and a control unit which controls the aperture switching mechanism to switch to either the first aperture or the second aperture. The control unit performs the packaging process using an image captured by switching to the first aperture and performs the additional processes using an image captured by switching to the second aperture.

A bonding apparatus is provided. This bonding apparatus uses images captured by an imaging apparatus and performs a packaging process for a semiconductor chip and additional processes other than the packaging process. The bonding apparatus is provided with: an aperture switching mechanism provided in an optical system of the imaging apparatus and capable of switching between a first aperture and a second aperture that has an aperture hole diameter greater than that of the first aperture; and a control unit which controls the aperture switching mechanism to switch to either the first aperture or the second aperture. The control unit performs the packaging process using an image captured by switching to the first aperture and performs the additional processes using an image captured by switching to the second aperture.

A method of detecting potential issues in connection with engagement between a wire bonding tool and an ultrasonic transducer of a wire bonding machine is provided. The method includes the steps of: (a) providing electrical power to an ultrasonic transducer at each of a plurality of levels of electrical power; (b) detecting an electrical characteristic of the ultrasonic transducer at each of the plurality of levels of electrical power; and (c) determining if the electrical characteristic of the ultrasonic transducer at each of the plurality of levels of electrical power is acceptable.

A semiconductor device is disclosed including a wire bonded die stack where the bond wires skip dies in the die stack to provide bond wires having a long length. In one example, the semiconductor dies are stacked on top of each other with offsets along two orthogonal axes so that the dies include odd numbered dies interspersed and staggered with respect to even numbered dies only one of the axes. Wire bonds may be formed between the odd numbered dies, skipping the even numbered dies, and wire bonds may be formed between the even numbered dies, skipping the odd numbered dies. The long length of the bond wires increases an inductance of the wire bonds relative to parasitic capacitance of the semiconductor dies, thereby increasing signal path bandwidth of the semiconductor device.

A laser module includes an optical fiber, a laser device, an optical system, a housing, a lead terminal, a conductive wire, and an insulation member. The laser device emits a laser beam. The optical system couples the laser beam, emitted from the laser device, to the optical fiber. The housing includes a base plate on which the laser device is fixed and a side wall that includes an opening. The lead terminal extends from an outside of the housing through the opening of the side wall into the housing. The conductive wire electrically connects a connecting portion of the lead terminal, located within the housing, to the laser device. The insulation member includes a seal portion and an extension portion.