A light emitting device includes a semiconductor chip including a p-type semiconductor layer and an n-type semiconductor layer, the semiconductor chip being adapted to emit light between the p-type semiconductor layer and the n-type semiconductor layer; a p-side pad electrode disposed on an upper surface side of the semiconductor chip and over the p-type semiconductor layer; an n-side pad electrode disposed on an upper surface side of the semiconductor chip and over the n-type semiconductor layer; a resin layer disposed to cover the upper surface of the semiconductor chip; a p-side connection electrode and an n-side connection electrode disposed at an outer surface of the resin layer and positioned on the upper surface side of the semiconductor chip; and a metal wire disposed in the resin. The metal wire is adapted to make connection at least one of between the p-side pad electrode and the p-side connection electrode, and between the n-side pad electrode and the n-side connection electrode.

A wire bonding device for performing a wire bonding process includes: a bonding tool for inserting a wire; an ultrasonic vibrator; a drive mechanism for moving the bonding tool; and a control part. The control part performs: a bonding step of bonding the wire to a bonding point; a tail feeding out step of feeding out a wire tail from the wire bonded to the bonding point; a tension applying step of raising the bonding tool to apply tension to the wire while the wire is clamped; a tension release step of lowering the bonding tool to release the tension applied to the wire; and after performing a series of steps including the tension applying step and the tension release step at least once, a tail cutting step of raising the bonding tool to cut the wire tail from the wire.

The invention relates to a heavy-wire bond arrangement, having a substrate (2), a heavy wire (1) and a high-voltage heavy-wire bond connection, in which an end bond section (4) of the heavy wire (1), which extends towards the end (7) of the heavy wire (1), is bonded to the substrate (2), such that in the area of the bond section (4) a bond contact (5) between the heavy wire (1) and the substrate (2) is formed, the heavy wire (1) having a tapering section (6) which adjoins the end of the wire (7) and in which the wire cross-section tapers towards the end of the wire (7). The application additionally relates to a method for producing a heavy-wire bond arrangement.

The invention relates to a heavy-wire bond arrangement, having a substrate (2), a heavy wire (1) and a high-voltage heavy-wire bond connection, in which an end bond section (4) of the heavy wire (1), which extends towards the end (7) of the heavy wire (1), is bonded to the substrate (2), such that in the area of the bond section (4) a bond contact (5) between the heavy wire (1) and the substrate (2) is formed, the heavy wire (1) having a tapering section (6) which adjoins the end of the wire (7) and in which the wire cross-section tapers towards the end of the wire (7). The application additionally relates to a method for producing a heavy-wire bond arrangement.

A method of manufacturing a semiconductor device includes: a wire tail forming step of forming a wire loop 130 between a first bonding point and a second bonding point with a bonding tool 40, and then cutting a portion of a wire 42 extending from a tip of the bonding tool 40 to thereby form a wire tail 43 at the tip of the bonding tool 40; and a wire tail bending step of bending the wire tail 43 so as to direct a tip 43a of the wire tail 43 upward by descending the bonding tool 40 toward the second bonding point with the wire loop 130 formed thereat and pressing the wire tail 43 against a portion of the wire loop 130 located above the second bonding point. Thus, the wire tail can be bent easily and efficiently.

Apparatus and method for tool mark free stich bonding. In some embodiments, a method for wire bonding can include feeding a wire through a capillary tip and attaching a first end of the wire to a first location, thereby forming a ball bond. The method can further include moving the capillary tip towards a second location while the wire feeds out of the capillary tip. The method can further include attaching a second end of the wire to the second location while preventing contact between the capillary tip and the second location, thereby forming a stitch bond without a tool mark at the second location.

A method of manufacturing a semiconductor device is provided. A bonding tool with a wire tail extending out of the tip thereof is lowered to bring the tip of the wire tail into contact with a bonding surface of the semiconductor device. Next, the bonding tool in a direction intersecting with the axial direction of the bonding tool (Z direction) is moved to bend the wire tail with the tip of the wire tail in contact with the bonding surface. Then the bonding tool is lowered to form the wire tail into a predetermined shape such that the tip of the wire tail points upward. And then, a wire looping step, a second bonding step and a wire cutting step are performed. This allows the wire tail to be formed easily and efficiently into a predetermined shape.

The invention provides a method of bonding wire between first and second bonding points with a bonding tool. It comprises the steps of forming a first bond at the first bonding point with the bonding tool, forming a first kink located over the first bond, and moving the bonding tool to a first position spaced from the first kink by a predetermined distance to release a length of wire from the bonding tool. It further comprises the step of moving the bonding tool in a direction away from the second bonding point to a second position which is outside a plane comprising the first bonding point, the second bonding point, and the first kink. It also comprises the steps of forming a second kink which lies outside the plane, and moving the bonding tool to the second bonding point to form a second bond.

A semiconductor package with embedded electromagnetic field (EMF) shielding protection using wire bonding is provided. The semiconductor may comprise a plurality of shield wires and signal wires. The shield wires may surround all of a portion of a die to shield the die from EMF. The shield wires and the signal wires may be formed from portions of wire bonds. In manufacturing the semiconductor package these wire bonds may be created connecting to the base and/or the die. The wire bonds may then be broken to form the shield wires and signal wires. These wires may be connected to a ground plane and/or signals pads, which are separated by a dielectric material.

A semiconductor device includes a cavity package including a substrate and at least one output lead disposed higher than the substrate, in a side view, to create a cavity. A transistor die is disposed within the cavity. A top surface of the transistor die is lower than a top surface of the output lead when viewed in the side view. A first substrate is disposed within the cavity and is separate from the transistor die. A top surface of the first substrate is lower than the top surface of the output lead in the side view. A shunt wire connects an output of the transistor die to the first substrate, and an output wire connects the output of the transistor substrate to the output lead. The shunt wire or the output wire is disposed and shaped to minimize self-inductance and to minimize mutual inductance with the shunt wire.