A light emitting element includes a first semiconductor layer; an emission layer disposed on the first semiconductor layer; a second semiconductor layer disposed on the emission layer; an electrode layer disposed on the second semiconductor layer; and an insulating film surrounding side surfaces of the first semiconductor layer, the emission layer, and the second semiconductor layer and surrounding a portion of the electrode layer at an end portion of the light emitting element on which the electrode layer is disposed. The electrode layer includes a first surface adjacent to the second semiconductor layer; a second surface facing the first surface and having a width less than a width of the first surface; and a side surface that connects the first surface and the second surface and has a slope in a range of about 75° to about 90° with respect to the first surface of the electrode layer.

Discussed is a semiconductor light emitting device for a display panel, a substrate structure for a display panel, and a display device including the substrate structure. A display device including a semiconductor light emitting device can include a first electrode and a second electrode spaced apart from each other on a predetermined substrate, an insulating layer disposed on the first and second electrodes, a first barrier wall disposed on the insulating layer and including a first assembling hole and a semiconductor light emitting device disposed in the first assembling hole of the first barrier wall. Also, the semiconductor light emitting device can include a light emitting structure, a passivation layer on the light emitting structure, and a first reflective alignment structure disposed in the light emitting structure.

The present specification provides a display device using semiconductor light-emitting diodes which are self-assembled in fluid, and a method for manufacturing same. Specifically, the semiconductor light-emitting diode comprises: a first-conductive-type electrode layer and a second-conductive-type electrode layer; a first-conductive-type semiconductor layer electrically connected to the first-conductive-type electrode layer; an active layer provided on the first-conductive-type semiconductor layer; and a second-conductive-type semiconductor layer provided on the active layer and electrically connected to the second-conductive-type electrode layer, wherein one surface of the second-conductive-type semiconductor layer comprises a mesa structure formed by etching a portion of the one surface, and the second-conductive-type electrode layer is provided on the one surface comprising the mesa structure of the second-conductive-type semiconductor layer.

Disclosed are methods and systems of controlling the placement of micro-objects on the surface of a micro-assembler. Control patterns may be used to cause electrodes of the micro-assembler to generate dielectrophoretic (DEP) and electrophoretic (EP) forces which may be used to manipulate, move, position, or orient one or more micro-objects on the surface of the micro-assembler. The control patterns may be part of a library of control patterns.

Disclosed are methods and systems of controlling the placement of micro-objects on the surface of a micro-assembler. Control patterns may be used to cause electrodes of the micro-assembler to generate dielectrophoretic (DEP) and electrophoretic (EP) forces which may be used to manipulate, move, position, or orient one or more micro-objects on the surface of the micro-assembler. The control patterns may be part of a library of control patterns.

Disclosed are methods and systems of controlling the placement of micro-objects on the surface of a micro-assembler. Control patterns may be used to cause phototransistors or electrodes of the micro-assembler to generate dielectrophoretic (DEP) and electrophoretic (EP) forces which may be used to manipulate, move, position, or orient one or more micro-objects on the surface of the micro-assembler. A set of micro-object may be analyzed. Geometric properties of the set of micro-objects may be identified. The set of micro-objects may be divided into multiple sub-sets of micro-objects based on the one or more geometric properties and one or more control patterns.

A display device manufacturing apparatus includes a first reservoir accommodating a solvent; a second reservoir accommodating a light emitting element; a mix chamber accommodating an ink including the solvent and the light emitting element ; a first channel connecting the first reservoir and the mix chamber; a second channel connecting the second reservoir and the mix chamber; and a counter that obtains information on a number of the light emitting elements that are moved in the second channel.

The present disclosure relates to a full-color light-emitting diode (LED) display, and more particularly, to a full-color LED display using an ultra-thin LED element and a manufacturing method thereof.

The present invention discloses a method for transferring a micro LED that is capable of easily mounting a micro LED or a nano LED on a desired position on a substrate by using an electric field.

Discussed is a self-assembly apparatus of a semiconductor light emitting device, the self-assembly apparatus including a fluid chamber configured to accommodate a plurality of semiconductor light emitting devices, each semiconductor light emitting device having a magnetic body; a magnet disposed to be spaced apart from the fluid chamber and configured to apply a magnetic force to the plurality of semiconductor light emitting devices; and a position controller connected to the magnet, and configured to control a position of the magnet; and a power supply configured to induce formation of an electric field on a substrate placed at an assembly position so that the plurality of semiconductor light emitting devices are seated at preset positions on the substrate while being moved due to a positional change of the magnet, wherein the position controller transfers the magnet in one direction while rotating the magnet about a rotation axis for the magnet.