A packaged integrated circuit device includes a substrate having a spacer chip thereon, which is devoid of active integrated circuits therein but which has a stress-relieving pattern of grooves in an upper surface thereof. A first semiconductor chip is provided, which is bonded to the upper surface of the spacer chip. A molded region is provided, which includes a passivating resin that: (i) at least partially surrounds the first semiconductor chip and the spacer chip, and (ii) extends into at least a portion of the grooves within the upper surface of the spacer chip.

Techniques disclosed herein cope with temperature effects in non-volatile memory systems. A control circuit is configured to sense a current temperature of the memory system and read, verify, program, and erase data in non-volatile memory cells by modifying one or more read/verify/program/erase parameters based on a temperature compensation value. The control circuit is further configured to read, verify, program, and erase data by accessing a historical temperature value stored in the memory system, the historical temperature value comprising a temperature at which a previous read, verify, program or erase occurred and measuring a current temperature value. The control circuit determines the temperature compensation value by applying a smoothing function. The smoothing function determines the temperature compensation value by selecting either the historical temperature value or the current temperature value as the temperature compensation value based on a difference between the historical temperature value and the current temperature relative to a threshold, or calculating the temperature compensation value, different from the current temperature value or the historical temperature value, based a smoothing function which utilizes the current temperature value and the historical temperature value.

A solar cell includes a first substrate, a first electrode layer, a first electron transport layer, a first photoelectric conversion layer, a first hole transport layer, a second electrode layer, a third electrode layer, a second electron transport layer, a second photoelectric conversion layer, a second hole transport layer, a fourth electrode layer, and a second substrate that are disposed in the order stated. The first photoelectric conversion layer includes a first perovskite compound, and the second photoelectric conversion layer includes a second perovskite compound. The first perovskite compound has a bandgap greater than a bandgap of the second perovskite compound.

In a three dimensional non-volatile memory structure that etches part of the top of the memory structure (including a portion of the select gates), data is stored on a majority (or all but one) of the word lines as x bits per memory cell while data is stored on a top edge word line that is closest to the etching with variable bits per memory cell. In one example embodiment that implements vertical NAND strings, memory cells connected to the top edge word line and that are on NAND strings adjacent the etching store data as n bits per memory cell and memory cells connected to the top edge word line and that are on NAND strings not adjacent the etching store data as m bits per memory cell, where m>x>n.

A semiconductor package may include: a substrate; a first sub-semiconductor package disposed over the substrate, the first sub-semiconductor package including a first buffer chip and a first memory chip; and a second memory chip disposed over the first sub-semiconductor package, wherein the first buffer chip and the first memory chip are connected to each other using a first redistribution line, and wherein the first buffer chip and the second memory chip are connected to each other using a second bonding wire.

A semiconductor package according to the inventive concept includes a first semiconductor chip configured to include a first semiconductor device, a first semiconductor substrate, a plurality of through electrodes penetrating the first semiconductor substrate, and a plurality of first chip connection pads arranged on an upper surface of the first semiconductor substrate; a plurality of second semiconductor chips sequentially stacked on an upper surface of the first semiconductor chip and configured to each include a second semiconductor substrate, a second semiconductor device controlled by the first semiconductor chip, and a plurality of second chip connection pads arranged on an upper surface of the second semiconductor substrate; a plurality of bonding wires configured to connect the plurality of first chip connection pads to the plurality of second chip connection pads; and a plurality of external connection terminals arranged on a lower surface of the first semiconductor chip.

A package base substrate includes a base layer; a plurality of lower surface connection pads disposed on a lower surface of the base layer; a plurality of lower surface wiring patterns disposed on a lower surface of the base layer and respectively connected to a set of lower surface connection pads of the plurality of lower surface connection pads; and a lower surface solder resist layer covering a portion of each of the plurality of lower surface connection pads and the plurality of lower surface wiring patterns on a lower surface of the base layer, wherein each of at least some of the lower surface connection pads of the set of lower surface connection pads has a teardrop shape in a plan view, and includes a ball land portion having a planar circular shape, including a terminal contact portion exposed without being covered by the lower surface solder resist layer, and an edge portion surrounding the terminal contact portion and covered by the lower surface solder resist layer; and a connection reinforcement portion between the ball land portion and the lower surface wiring pattern, including an extension line portion having a width that is the same as a line width of the lower surface wiring pattern and extending from the ball land portion to the lower surface wiring pattern, and a corner reinforcement portion filling a corner between the ball land portion and the extension line portion, and wherein an extension length of the extension line portion has a value greater than a radius of the terminal contact portion.

A semiconductor device has a differential height substrate including a first section and a second section thinner than the first section. The first section may include contact fingers for electrically coupling the semiconductor device to a connector in a slot of a host device. The second section may include one or more semiconductor dies and other components. Mold compound may encapsulate the semiconductor dies and other components, leaving the contact fingers in the first section of the substrate exposed. A second layer of mold compound may also be applied to a second, uniformly planar surface of the differential height substrate opposite a surface including the one or more semiconductor dies.

A semiconductor package including a first lower stack on a substrate and including first lower semiconductor chips, a redistribution substrate on the first lower stack, a redistribution connector electrically connecting the substrate to the redistribution substrate, a first upper stack on the redistribution substrate and including first upper semiconductor chips, a first upper connector electrically connecting the redistribution substrate to the first upper stack, a second upper stack horizontally spaced apart from the first upper stack and including second upper semiconductor chips, and a second upper connector electrically connecting the redistribution substrate to the second upper stack may be provided. The redistribution connector may be on one side of the redistribution substrate. The first upper connector may be on one side of the first upper stack. The second upper connector may be on one side of the second upper stack.

A semiconductor package includes first semiconductor chips stacked on a package substrate, a lowermost first semiconductor chip of the first semiconductor chips including a recessed region, and a second semiconductor chip inserted in the recessed region, the second semiconductor chip being connected to the package substrate.