A method includes attaching a first-level device die to a dummy die, encapsulating the first-level device die in a first encapsulating material, forming through-vias over and electrically coupled to the first-level device die, attaching a second-level device die over the first-level device die, and encapsulating the through-vias and the second-level device die in a second encapsulating material. Redistribution lines are formed over and electrically coupled to the through-vias and the second-level device die. The dummy die, the first-level device die, the first encapsulating material, the second-level device die, and the second encapsulating material form parts of a composite wafer.

A leadframe includes a first die attach pad (“DAP”) having a first longitudinally extending edge surface and a second DAP having a first longitudinally extending edge surface. The second DAP is positioned with the first longitudinally extending edge surface thereof in adjacent, laterally and vertically spaced relationship with the first longitudinally extending edge surface of the first DAP.

A package structure is provided. The package structure includes a through substrate via structure, a first stacked die package structure, an underfill layer, and a package layer. The through substrate via structure is formed over a substrate. The first stacked die package structure is over the through substrate via structure, wherein the first stacked die package structure comprises a plurality of memory dies. The underfill layer is over the first stacked die package structure. the package layer is over the underfill layer, wherein the package layer has a protruding portion that extends below a top surface of the through substrate via structure.

The present application provides a semiconductor package and a manufacturing method for the semiconductor package. The semiconductor package includes a package substrate, a first semiconductor die, a second semiconductor die, a first encapsulant and a second encapsulant. The package substrate has a first side and a second side facing away from the first side, and the second side has a concave recessed from a planar portion of the second side. The first semiconductor die is attached to the first side of the package substrate. The second semiconductor die is attached to a recessed surface of the concave. The first encapsulant covers the first side of the package substrate and encapsulates the first semiconductor die. The second encapsulant fills up the concave and encapsulates the second semiconductor die.

Some examples of the disclosure may include a package on package integrated package configuration including a first die located above the substrate in a first plane, a second die located above the first die in a second plane with a portion extending past the first die, a third die located above the first die in the second plane with a portion extending past the first die, a fourth die located above the second die and the third die in a third plane with a portion extending past the second die and the third die, and a fifth die located above the second die and the third die in the third plane with a portion extending past the second die and the third die.

A semiconductor package includes a first semiconductor chip including first pads and a first insulating layer, and a second semiconductor chip including second upper pads, a second insulating layer, second lower pads, and through electrodes connecting the second upper pads and the second lower pads to each other. The package includes a third semiconductor chip including third upper pads, an upper barrier layer, a third insulating layer, third lower pads, a lower barrier layer, and dummy electrode structures connecting the third upper pads and the third lower pads to each other. The package includes an encapsulant below the first semiconductor chip to seal at least a portion of each of the second and third semiconductor chips and cover side surfaces of the third lower pads. The package includes bump structures below the encapsulant and the second and third semiconductor chips.

Stacked semiconductor dies for semiconductor device assemblies and associated methods and systems are disclosed. In some embodiments, the semiconductor die assembly includes a substrate with a first opening in an inner portion and a second opening in an outer portion of the substrate. Further, the semiconductor die assembly can include a master die attached to a front side of the substrate, where the master die includes a first bond pad proximate to the first opening and a second bond pad proximate to the second opening. The first and second bond pads of the master die can be coupled with first and second substrate bond pads on a back side of the substrate, opposite to the front side, using first and second bonding wires extending through the first and second openings, respectively.

A method for manufacturing a semiconductor device includes providing an adhesive film over a first surface of a semiconductor wafer on which a semiconductor device layer and a bump electrically connected to the semiconductor device layer are formed, forming a slit in the adhesive film, fragmenting the semiconductor wafer into semiconductor chips along the slit, and connecting the bump to a wiring of a circuit board within the adhesive film.

A semiconductor element and a manufacturing method thereof are provided. The semiconductor element includes a substrate and multiple semiconductor chips disposed thereon. The semiconductor chips are arranged to form multiple sequentially nested circle(s), and a circumference of each of which is arranged with multiple the semiconductor chips. The numbers of the semiconductor chips arranged on the respective circumferences of the sequentially nested circle(s) from inside to outside are gradually increased, and distances among the circumferences are gradually decreased from inside to outside. The disclosure optimizes the arrangement of the semiconductor chips to make the arrangement of the semiconductor chips be loose in the central region while more dense towards outside, which is in favor of uniform heat distribution and therefore can slow down aging and failure of the semiconductor chips and improve heat dissipation performance and light emitting effect of product.

A semiconductor package structure includes a conductive structure, a semiconductor element disposed on and electrically connected to the conductive structure, a supporting structure, an encapsulant, and a metal layer. The supporting structure is disposed on the conductive structure and surrounds the semiconductor element. The encapsulant covers the semiconductor element. The metal layer is disposed on or embedded in the encapsulant.