An IC includes a substrate including circuitry configured to provide a receiver or a transmitter circuit. A metal stack is over the semiconductor surface including a top metal layer and a plurality of lower metal layers. An isolation capacitor includes the top metal layer as a top plate that is electrically connected to a first node; and a top dielectric layer on the top plate with a top plate dielectric aperture. One of the plurality of lower metal layers provides a bottom plate that includes a plurality of spaced apart segments. A capacitor dielectric layer is between the top and bottom plate. The segments include a first segment electrically connected to a second node and at least a second segment electrically connected to a third node, with separation regions located between adjacent spaced apart segments. The top plate covers at least a portion of each of the separation regions.

A film type package includes: a base film having first and second sides; a driver integrated circuit mounted on the base film; first connection pads disposed on a first area of the base film that is adjacent to the first side of the base film, and configured to be connected to a first external circuit; second connection pads disposed on a second area of the base film that is adjacent to the second side of the base film, and configured to be connected to a second external circuit; first signal lines disposed on the base film, and connecting the driver integrated circuit and the first connection pads; second signal lines disposed on the base film, and connecting the driver integrated circuit and the second connection pads; and a plurality of test lines extending from the driver integrated circuit to the first side of the base film.

The display device includes a flexible base layer including a first region and a second region located around the first; a display unit on one surface of the first region and including a light emitting element; a driving circuit on the second region and including a plurality of first bumps arranged in a first row and a plurality of second bumps arranged in a second row, the driving circuit includes a third bump in the first row and disposed outward relative to the plurality of first bumps, a first and second reference bump each disposed at a center of the plurality of first and second bumps that are disposed along a reference line defined in a column direction vertically intersecting a row direction, the remaining first and second bumps excluding the first reference bump and the second reference bump arranged to have a preset slope with respect to the reference line.

A package includes a leadframe having first surface and a second surface opposing the first surface, the leadframe forming a plurality of leads, a first semiconductor die mounted on the first surface of the leadframe and electrically connected to at least one of the plurality of leads, a second semiconductor die mounted on the second surface of the leadframe, wire bonds electrically connecting the second semiconductor die to the leadframe, and mold compound at least partially covering the first semiconductor die, the second semiconductor die and the wire bonds.

A device includes an array of light sources (e.g., micro-LEDs, micro-RCLEDs, micro-laser: micro-SLEDs, or micro-VCSELs), a dielectric layer on the array of light sources, and a set of metal bonding pads (e.g., copper bonding pads) in the dielectric layer. Each metal bonding pad of the set of metal bonding pads is electrically connected to a respective light source of the array of light sources. Each metal bonding pad of the set of metal bonding pads includes a first portion at a bonding surface and characterized by a first lateral cross-sectional area, and a second portion away from the bonding surface and characterized by a second lateral cross-sectional area larger than two times of the first lateral cross-sectional area. The device can be bonded to a backplane that includes a drive circuit through a low annealing temperature hybrid bonding.

A semiconductor package includes a multilayer package substrate including a first layer including a first dielectric and first metal layer including a first metal trace and a second layer including a second dielectric layer. An integrated circuit (IC) die includes bond pads, with a bottom side of the IC die attached to the first metal trace. Metal pillars are through the second dielectric layer connecting to the first metal trace. A third layer on the second layer includes a third dielectric layer on the second layer extending to a bottom side of the semiconductor package, and a second metal layer including second metal traces including inner second metal traces connected to the bond pads and outer second metal traces over the metal pillars, and filled vias providing externally accessible contact pads that connect the second metal traces to a bottom side of the semiconductor package.

A chip-on-film package includes a base film having a top surface and a bottom surface, and a circuit region; a source driver chip and a gate driver chip mounted on the circuit region; a first conductive line on the top surface of the base film, a second conductive line on the bottom surface of the base film, and a conductive via that connects the first and second conductive lines to each other; a first row of bonding pads on the circuit region and connected to the source driver chip; a second row of bonding pads on the circuit region and connected to the source driver chip and the gate driver chip; and a test pad outside the circuit region and connected to the first and second conductive lines and the conductive via.

Provide is a highly reliable semiconductor device in which stress generated in a semiconductor chip is reduced and an increase in thermal resistance is suppressed. The semiconductor device includes: a semiconductor chip including a first main electrode on one surface thereof and a second main electrode and a gate electrode on the other surface thereof; a first electrode connected to the one surface of the semiconductor chip via a first bonding material; and a second electrode connected to the other surface of the semiconductor chip via a second bonding material. The first electrode is a plate-shaped electrode and has a groove in a region overlapping with the semiconductor chip. The groove penetrates in a thickness direction of the first electrode and reaches an end portion of the first electrode when viewed in a plan view.

A semiconductor package comprises an encapsulation having a first lateral side and an opposite second lateral side, at least one power semiconductor chip having a drain contact region running along the first lateral side, a source contact region running along the second lateral side, and first and second inner contact regions arranged between the drain and source contact regions, a first external terminal which is connected to the drain contact region, is arranged centrally on the first lateral side, and is configured to apply a supply voltage for the at least one power semiconductor chip, a second external terminal which is connected to the source contact region, is arranged centrally on the second lateral side, and is configured to apply a reference voltage for the at least one power semiconductor chip, third and fourth external terminals which are connected to the first inner contact region. are arranged opposite each other at a first end of the first and second lateral sides, respectively, and are configured a first output of the semiconductor package, and fifth and sixth external terminals which are connected to the second inner contact region and are arranged opposite each other at a second end of the first and second lateral sides, respectively, and are configured as a second output of the semiconductor package.

A method of manufacturing a sensor device (100) comprises providing (200) a package (102) having a first die-receiving subframe volume (104) separated from a second die-receiving subframe volume (106) by a partition wall (116). An elongate sensor element (120) is disposed (202) within the package (102) so as to bridge the first and second subframe volumes (104, 106) and to overlie the partition wall (116). The elongate sensor element (120) resides substantially in the first subframe volume (104) and partially in the second subframe volume (106). The elongate sensor element (120) is electrically connected within the second subframe volume (106).