A semiconductor package includes a semiconductor chip on a first redistribution substrate, a molding layer that covers the semiconductor chip, and a second redistribution substrate on the molding layer and that includes a dielectric layer, a redistribution pattern, and a conductive pad. The dielectric layer includes a lower opening that exposes the conductive pad, and an upper opening connected to the lower opening and that is wider than the lower opening. The semiconductor package also comprises a redistribution pad on the conductive pad and that covers a sidewall of the lower opening and a bottom surface of the upper opening. A top surface of the dielectric layer is located at a higher level than a top surface of the redistribution pad. The top surface of the redistribution pad is located on the bottom surface of the upper opening.

A system for transmission of quantum information for quantum error correction includes an ancilla qubit chip including a plurality of ancilla qubits, and a data qubit chip spaced apart from the ancilla qubit chip, the data qubit chip including a plurality of data qubits. The system includes an interposer coupled to the ancilla qubit chip and the data qubit chip, the interposer including a dielectric material and a plurality of superconducting structures formed in the dielectric material. The superconducting structures enable transmission of quantum information between the plurality of data qubits on the data qubit chip and the plurality of ancilla qubits on the ancilla qubit chip via virtual photons for quantum error correction.

A semiconductor package may be presented. The semiconductor package includes a first dielectric layer including a first surface and a second surface. First and second conductive lands are disposed on the first surface of the first dielectric layer. A first column formed by the first conductive lands and a second column formed by the second conductive lands are spaced apart from each other. Outer traces extend from the second conductive lands, and inner traces are disposed on the second surface of the first dielectric layer. Vias penetrate the first dielectric layer and respectively connect the first conductive lands to the inner traces. A semiconductor die is disposed on the first surface of the first dielectric layer.

A semiconductor package structure includes a substrate, a redistribution layer, a first semiconductor die, and a first capacitor. The substrate has a wiring structure. The redistribution layer is disposed over the substrate. The first semiconductor die is disposed over the redistribution layer. The first capacitor is disposed in the substrate and is electrically coupled to the first semiconductor die. The first capacitor includes a first capacitor substrate, a plurality of first capacitor cells, and a first through via. The first capacitor substrate has a first top surface and a first bottom surface. The first capacitor cells are disposed in the first capacitor substrate. The first through via is disposed in the first capacitor substrate and electrically couples the first capacitor cells to the wiring structure on the first top surface and the first bottom surface.

A semiconductor package includes a base substrate having a plurality of upper pads and a plurality of first and second lower pads, a semiconductor chip disposed on the base substrate and electrically connected to the plurality of upper pads, a solder resist layer having a plurality of openings exposing a region of each of the plurality of first and second lower pads, the exposed regions of the plurality of first and second lower pads having the same size, a plurality of first external connection conductors respectively disposed on the exposed regions of the plurality of first lower pads and having a first height and a first volume, and a plurality of second external connection conductors respectively disposed on the exposed regions of the plurality of second lower pads and having a second height, greater than the first height, and a second volume, greater than the first volume.

A semiconductor package includes a package substrate, a lower semiconductor chip on the package substrate, an interposer on the lower semiconductor chip, the interposer including a plurality of pieces spaced apart from each other, an upper semiconductor chip on the interposer, and a molding member covering the lower semiconductor chip and the interposer.

A semiconductor package including: a redistribution layer including redistribution line patterns, redistribution vias connected to the redistribution line patterns, and a redistribution insulating layer surrounding the redistribution line patterns and the redistribution vias; semiconductor chips including at least one upper semiconductor chip disposed on a lowermost semiconductor chip of the semiconductor chips, wherein the at least one upper semiconductor chip is thicker than the lowermost semiconductor chip; bonding wires each having a first end and a second end, wherein the bonding wires connect the semiconductor chips to the redistribution layer, wherein the first end of each of the bonding wires is connected to a respective chip pad of the semiconductor chips and the second end of each of the bonding wires is connected to a respective one of the redistribution line patterns; and a molding member surrounding, on the redistribution layer, the semiconductor chips and the bonding wires.

Apparatus and methods for power amplifiers with positive envelope feedback are provided herein. In certain implementations, a power amplifier system includes a power amplification stage that amplifies a radio frequency signal, at least one envelope detector that generates one or more detection signals indicating an output signal envelope of the power amplification stage, and a wideband feedback circuit that provides positive envelope feedback to a bias of the power amplification stage based on the one or more detection signals. The power amplifier system further includes a supply modulator that controls a voltage level of a supply voltage of the power amplification stage based on the one or more detection signals such that the supply voltage is modulated with the output signal envelope through positive envelope feedback.

In an embodiment an electronic device includes a carrier board having an upper surface, an electronic chip mounted on the upper surface of the carrier board, the electronic chip having a mounting side facing the upper surface of the carrier board, a flexible mounting layer arranged between the upper surface of the carrier board and the mounting side of the electronic chip, the flexible mounting layer mounting the electronic chip to the carrier board, wherein the mounting side has at least one first region and a second region, and wherein the electronic chip has at least one chip contact element in the first region and at least one connection element arranged on the at least one first region and connecting the at least one chip contact element to the upper surface of the carrier board, wherein the flexible mounting layer separates the second region from the connection element.

A support substrate has a mounting face with a metal heat transfer layer. Holes are provided to extend at least partially through the metal heat transfer layer. Metal heat transfer elements are disposed in the holes of the metal heat transfer layer of the support substrate. An electronic integrated circuit (IC) chip has a rear face that is fixed to the mounting face of the support substrate via a layer of adhesive material. The metal heat transfer elements disposed in the holes of the metal layer of the support substrate extend to protrude, relative to the mounting face of the support substrate, into the layer of adhesive material.