A method of manufacturing a semiconductor device is provided. The method includes attaching a first end of a first bond wire to a first conductive lead and a second end of the first bond wire to a first bond pad of a first semiconductor die. A conductive lead extender is affixed to the first conductive lead by way of a conductive adhesive, the lead extender overlapping the first end of the first bond wire. A first end of a second bond wire is attached to the lead extender, the first end of the second bond wire conductively connected to the first end of the first bond wire.

A method of manufacturing a semiconductor device is provided. The method includes attaching a first end of a first bond wire to a first conductive lead and a second end of the first bond wire to a first bond pad of a first semiconductor die. A conductive lead extender is affixed to the first conductive lead by way of a conductive adhesive, the lead extender overlapping the first end of the first bond wire. A first end of a second bond wire is attached to the lead extender, the first end of the second bond wire conductively connected to the first end of the first bond wire.

A printed circuit board includes: a substrate structure having a first surface including a chip mounting region on which a semiconductor chip is mounted and a second surface opposite to the first surface, the second surface having a rectangular shape having first to fourth edges and first to fourth corners formed by the first to fourth edges, and pad patterns on the second surface of the substrate structure, wherein the second surface includes a first region including a region corresponding to the chip mounting region and in contact with the first to fourth edges, respectively, and second regions adjacent to the first to fourth corners, respectively and spaced apart from each other by the first region, wherein the pad patterns include first pad patterns in the first region and surface-treated with a nickel/gold (Ni/Au) layer, and second pad patterns in the second regions and surface-treated with an organic solderability preservative.

A semiconductor structure includes a fan-out package, a packaging substrate, an solder material portions bonded to the fan-out package and the packaging substrate, an underfill material portion laterally surrounding the solder material portions, and at least one cushioning film located on the packaging substrate and contacting the underfill material portion and having a Young's modulus is lower than a Young's modulus of the underfill material portion.

A semiconductor structure includes a fan-out package, a packaging substrate, an solder material portions bonded to the fan-out package and the packaging substrate, an underfill material portion laterally surrounding the solder material portions, and at least one cushioning film located on the packaging substrate and contacting the underfill material portion and having a Young's modulus is lower than a Young's modulus of the underfill material portion.

Disclosed is a semiconductor package comprising a semiconductor chip, a redistribution pattern on a bottom surface of the semiconductor chip and coupled to the semiconductor chip, a protection layer that covers a bottom surface of the redistribution pattern, a conductive pattern on a bottom surface of the protection layer and coupled to the redistribution pattern, a buffer pattern in contact with a bottom surface of a first part of the conductive pattern and with the bottom surface of the protection layer, and an under bump pattern on a bottom surface of the second part of the conductive pattern and covering a bottom surface and a side surface of the buffer pattern. The under bump pattern is coupled to the second part of the conductive pattern.

A semiconductor device and a method of manufacturing a semiconductor device are provided. The semiconductor device includes a carrier, an element, and a first electronic component. The element is disposed on the carrier. The first electronic component is disposed above the element. The element is configured to adjust a first bandwidth of a first signal transmitted from the first electronic component.

Disclosed are semiconductor packages and their fabricating methods. The semiconductor package includes a lower structure and an upper redistribution layer. The lower structure includes a first bump layer, a lower redistribution layer, a semiconductor chip, a molding layer, a conductive pillar, and an under pad layer. The upper redistribution layer includes a second bump layer and second redistribution layers. The first redistribution layer includes a lower redistribution pattern including a first line part and a first via part. A width of the first via part increases in a direction toward the first line part from a bottom surface of the first via part. The second redistribution layer includes an upper redistribution pattern including a second line part and the second via part. A width of the second via part increases in a direction toward the second line part from a top surface of the second via part.

Disclosed is a semiconductor package comprising a first chip stack including on a substrate a plurality of first semiconductor chips in an offset stack structure and stacked to expose a connection region at a top surface of each of the first semiconductor chips, a second semiconductor chip on the substrate and horizontally spaced apart from the first chip stack, a spacer on the second semiconductor chip, and a second chip stack including third semiconductor chips in an offset stack structure on the first chip stack and the spacer. Each of the first semiconductor chips includes a first chip pad on the connection region and a first wire that extends between the first chip pad and the substrate. The first wire of an uppermost one of the first semiconductor chips is horizontally spaced apart from a lowermost one of the third semiconductor chips.

Disclosed is a semiconductor package comprising a first chip stack including on a substrate a plurality of first semiconductor chips in an offset stack structure and stacked to expose a connection region at a top surface of each of the first semiconductor chips, a second semiconductor chip on the substrate and horizontally spaced apart from the first chip stack, a spacer on the second semiconductor chip, and a second chip stack including third semiconductor chips in an offset stack structure on the first chip stack and the spacer. Each of the first semiconductor chips includes a first chip pad on the connection region and a first wire that extends between the first chip pad and the substrate. The first wire of an uppermost one of the first semiconductor chips is horizontally spaced apart from a lowermost one of the third semiconductor chips.