A light emitting device includes a base, a lid portion, a plurality of semiconductor laser elements, and a collimate lens. The lid portion is fixed to the base to define a hermetically sealed space by the lid portion and the base. The semiconductor laser elements are provided in the hermetically sealed space. The collimate lens has a non-lens portion fixed to the lid portion, and a plurality of lens portions connected and aligned along one direction and surrounded by the non-lens portion when viewed from a light extracting surface side of the collimate lens.

An optoelectronic device includes an optoelectronic die, a laser die, and electrical interconnects. The optoelectronic device has a surface. A trench having first and second walls and a floor is formed in the surface, and an electrically conductive layer extends from the floor, via the first wall, to the surface. The laser die includes first and second electrodes and a laser output aperture. The laser die is mounted in the trench and is configured to emit a laser beam. The first electrode is coupled to the electrically conductive layer and the laser output aperture is mechanically aligned with a waveguide that extends from the second wall. The interconnects are formed on the second electrode of the laser die and on selected locations on the surface of the optoelectronic die. The interconnects are coupled to a substrate, and are configured to conduct electrical signals between the optoelectronic die and the substrate.

In an embodiment an optoelectronic semiconductor component includes a lead frame having a first mounting surface, a semiconductor chip arranged on the first mounting surface and having an emission surface, an optical element and a molded body, wherein the optical element has an input-coupling surface oriented transverse to the first mounting surface, wherein the semiconductor chip is configured to emit electromagnetic radiation through the emission surface, a radiation axis of which is parallel to the first mounting surface, wherein the optical element is configured to deflect the electromagnetic radiation of the semiconductor chip coupled in via the input-coupling surface, wherein the molded body is attached to the lead frame and has an alignment surface transverse to the first mounting surface, and wherein the optical element and the alignment surface are in direct contact with each other.

A supporting member supports a peeled end portion formed at an end portion in longitudinal direction representing first direction of an optical fiber, the optical fiber including: a core wire including a core and a cladding; and a jacket configured to enclose the core wire, the jacket being removed at the peeled end portion to expose the core wire. The supporting member includes: a first member; a second member fixed to the first member; a housing portion provided between the first member and the second member, the housing portion extending along the peeled end portion and being configured to house the peeled end portion; and a processed member housed in the housing portion and provided around the peeled end portion, the processed member being configured to cause transmission or scattering of light leaking from the peeled end portion.

[Object] To provide a light source device, a headlight, a display apparatus, and an illumination apparatus having excellent heat dissipation. [Solving Means] The light source device includes a substrate, a phosphor, a light emitting element, and a wavelength-selective reflecting member. The phosphor is disposed in contact with the substrate. The light emitting element emits excitation light for exciting the phosphor. The wavelength-selective reflecting member partially reflects the excitation light emitted from the light emitting element to be guided to the phosphor and transmits fluorescence emitted from the phosphor by excitation caused by incidence of the excitation light and the excitation light reflected by the phosphor.

A method of fabricating a gain medium includes growing a p-type layer doped with zinc on a substrate, growing an undoped layer including one or both of InP or InGaAsP on the p-type layer, growing a region that includes multiple quantum wells (MQWs) on the undoped layer, and growing an n-type layer on the region. The undoped layer has a thickness that is sufficient to prevent Zn diffusion from the p-type layer into the region during subsequent growth or wafer fabrication steps.

A spectroscopic laser sensor based on hybrid III-V/IV system-on-a-chip technology. The laser sensor is configured to either (i) be used with a fiber-optic probe connected to an intravenous/intra-arterial optical catheter for direct invasive blood analyte concentration level measurement or (ii) be used to measure blood analyte concentration level non-invasively through an optical interface attached, e.g., to the skin or fingernail bed of a human. The sensor includes a III-V gain-chip, e.g., an AlGaInAsSb/GaSb based gain-chip, and a photonic integrated circuit, with laser wavelength filtering, laser wavelength tuning, laser wavelength monitoring, laser signal monitoring and signal output sections realized on a chip by combining IV-based semiconductor substrates and flip-chip AlGa1-nAsSb/GaSb based photodetectors and embedded electronics for signal processing. Embodiments of the invention may be applied for real-time monitoring of critical blood analyte concentration levels such as lactates, urea, glucose, ammonia, albumin, etc.

Provided are a lens, a stem, an LD chip to emit laser light with a beam center directed along a mounting surface of the stem, and a PD chip having a reflective surface formed with a dielectric multilayer film on its surface, reflecting the laser light emitted from the LD chip toward the lens, and measuring an amount of the laser light, wherein the LD chip is provided with a waveguide portion having a tip portion that is formed on a side of a front end face and has a width of 0.5 to 0.7 μm, and having a tapered portion that is connected to the tip portion and becomes narrower toward the tip portion at a gradient of 0.018 to 0.033.

A light-emitting device includes: a base including: a mount surface, and a lateral wall located around the mount surface, the lateral wall including: a pair of first protrusions located opposite to each other in a first direction which is parallel to a side of the mount surface, and a pair of second protrusions located opposite to each other in a second direction which is perpendicular to the first direction, the second protrusions being provided lower than the first protrusions; one or more light-emitting elements mounted on the mount surface of the base; a first light-transmissive member sealing a space in which the one or more light-emitting elements are mounted; and one or more wires connecting to the one or more light-emitting elements, the one or more wires being bonded on conduction regions provided on at least one of upper surfaces of the second protrusions.

A disclosed semiconductor laser module includes a semiconductor laser device; a semiconductor optical amplifier configured to receive laser light emitted from the semiconductor laser device and amplify the laser light that has been received; and a first light receiving device that measures an intensity of a part of the laser light emitted from the semiconductor laser device, for monitoring a wavelength of the laser light, wherein the semiconductor optical amplifier is located rearward in relation to a light receiving surface of the first light receiving device along a propagation direction of the laser light emitted from the semiconductor device.