A piezoelectric vibration piece has an inverted mesa-type structure, comprising a thinned portion serving as a vibration region at a central part of a piezoelectric plate; and a thickened portion formed all along or partly along perimeter of the thinned portion to reinforce the thinned portion. In the piezoelectric vibration piece, contact metals including a large number of discrete metallic thin films are provided on the whole surfaces of the piezoelectric plate. A piezoelectric vibration device comprises the piezoelectric vibration piece which is housed in a package, wherein extraction electrodes of the piezoelectric vibration piece are connected to internal terminals of the package through a conductive adhesive. These structural and technical advantages prevent undesirable flowage of the conductive adhesive before thermal curing. As a result, the piezoelectric vibration piece and the piezoelectric vibration device comprising the same successfully attain excellent vibration characteristics.

A piezoelectric component includes a support substrate; a piezoelectric element having both ends fixed to the support substrate, so as to be oscillatable; a pair of terminal electrodes located below the ends of the piezoelectric element, respectively; a pair of capacitance-forming electrodes each having a greater width than the piezoelectric element, extending from the pair of terminal electrodes, respectively, toward a center of the piezoelectric element; and excitation electrodes disposed on a first principal surface and a second principal surface of the piezoelectric element, respectively, the excitation electrodes facing each other so that a facing region in which the excitation electrodes overlap with each other as seen in a transparent plan view is defined therebetween, at least part of a region of the pair of capacitance-forming electrodes which protrudes outside the facing region in a width direction thereof as seen in a plan view, being covered with an insulating film.

A protective cover for an acoustic wave device and a fabrication method thereof, for protecting an acoustic wave device having a resonant area on a surface of a substrate during a packaging operation so as to avoid molding compound flowing onto the resonant area of the acoustic wave device, wherein at least one electrical device is provided on the surface of the substrate and the at least one electrical device includes a temperature sensor. The acoustic wave device protection structure comprising: a metal covering layer, having a concave surface and a bottom rim, the bottom rim connected to the acoustic wave device and forming at least one opening between the bottom rim and the acoustic wave device, and the concave surface covering over the resonant area to form a cavity between the concave surface and the resonant area.

The present disclosure relates to an electronic element package and a method of manufacturing the same. The electronic element package includes a substrate, an element disposed on the substrate, and a cap enclosing the element. One of the substrate and the cap includes a groove, the other of the substrate and the cap includes a protrusion engaging with the groove. A first metal layer and a second metal layer form a metallic bond with each other in a space between the groove and the protrusion.

The present disclosure relates to an electronic element package and a method of manufacturing the same. The electronic element package includes a substrate, an element disposed on the substrate, a cap enclosing the element, a bonding portion bonding the substrate to the cap, and blocking portions disposed on both sides of the bonding portion.

An acoustic wave device includes: a first substrate including a support substrate and a piezoelectric substrate bonded on an upper surface of the support substrate, and including a first acoustic wave element located on an upper surface of the piezoelectric substrate; a ring-shaped metal layer located in a region that surrounds the first acoustic wave element and in which the piezoelectric substrate is removed, a second substrate flip-chip mounted on an upper surface of the first substrate and including a functional element located on a lower surface of the second substrate; and a metallic member located on an upper surface of the ring-shaped metal layer, surrounding the second substrate in plan view, not located between the first substrate and the second substrate, and sealing the first acoustic wave element and the functional element so that the first acoustic wave element and the functional element are located across an air gap.

A composite substrate 10 includes a semiconductor substrate 12 and an insulating support substrate 14 that are laminated together. The support substrate 14 includes first and second substrates 14a and 14b made of the same material and bonded together with a strength that allows the first and second substrates 14a and 14b to be separated from each other with a blade. The semiconductor substrate 12 is laminated on a surface of the first substrate 14a opposite a surface thereof bonded to the second substrate 14b.

Aspects of this disclosure relate to bulk acoustic wave components. A bulk acoustic wave component can include a substrate, at least one bulk acoustic wave resonator on the substrate, and a cap enclosing the at least one bulk acoustic wave resonator. The cap can include a sidewall spaced apart from an edge of the substrate. The sidewall can be 5 microns or less from the edge of the substrate.

An acoustic resonator package includes a substrate, an acoustic resonator disposed on the substrate, the acoustic resonator including a first hydrophobic layer, a cap configured to accommodate the acoustic resonator, a bonding portion configured to bond the substrate to the cap, and a second hydrophobic layer disposed on the substrate at a position between the acoustic resonator and the bonding portion.

A resonator device includes a base and a resonator component disposed on the base. The base includes a semiconductor substrate having a first surface and a second surface that are in a front-to-back relation with each other; an integrated circuit that includes a wiring layer disposed at the second surface side and including a connection pad and includes an insulating layer disposed between the second surface and the wiring layer; a through electrode that penetrates the semiconductor substrate and the insulating layer and is coupled to the connection pad; and an annular metal layer that is disposed so as to penetrate the insulating layer between the second surface and the wiring layer and surrounds the through electrode in a plan view of the semiconductor substrate.