An accelerated aging circuit is described to shorten the required stress time to a few seconds of operation. Due to the challenges posed by process variation in advanced CMOS technology, a stochastic processing methodology is also described to reduce the failure rate of the tracking and detection. Combining both circuit and system level acceleration, the creation of a silicon marker can be realized within seconds of usage in contrast with days of operation from previously reported aging monitor.

A voltage level shifter for an SRAM device includes a level shifter input and provides a second voltage level. A voltage input terminal receives a first signal at a first voltage level and an inverter having an input and an output with the voltage input terminal is connected to the inverter input. A first voltage selector selectively applies an intermediate voltage to the gate of a PMOS transistor in a first complementary pair when the voltage of a complementary level shift output voltage rises to a logical 1 and a second voltage selector applies the intermediate voltage to the gate of a PMOS transistor in a second complementary pair when the voltage of the level shift output voltage node rises to a logical 1. The PMOS transistor current is thereby reduced resulting in lower energy dissipation and supporting a larger voltage separation between the first and second voltage levels.

The present application is directed to a level shifting circuit. In one form, a level shifting circuit includes a first inverter, a level shifting unit, and a fast driving unit. The first inverter is configured to invert an input signal received at an input node and to output an inverted input signal to a second input node. The level shifting unit is configured to perform amplitude up-shifting processing on a received input signal. The fast driving unit is configured to pull up an output signal of an output node of the level shifting unit by increasing a discharge current of the level shifting unit when receiving the input signal.

In one general aspect, a level-shifting circuit includes a first supply terminal configured to receive a first supply voltage, and a second supply terminal configured to receive a second supply voltage different from the first supply voltage. The level-shifting circuit includes a shifting circuit having electrical connections to an input terminal and an output terminal and configured to, in response to a first voltage at a first node, produce a second voltage at a second node. The shifting circuit is used to shift a first voltage level to a second voltage level. The level-shifting circuit includes a clamping circuit having an electrical connection to the first node where the clamping circuit is configured to limit current at the first node from flowing to a ground.

Described is a high speed, low power level shifter circuit which includes a level shifter coupled to a sensing circuit. The level shifter includes a pair of source transistors, a pair of input transistors, and a pair of switching circuits connected between the source transistors and the input transistors. The sensing circuit turns off a switching circuit on an active side of the level shifter based on detecting that an output voltage of the level shifter has completed a voltage level transition from a first logic level voltage to a second logic level voltage. An open circuit is established on the active side and turns off the pair of source transistors. The other switching circuit is turned on. Static current flow on the active side of the level shifter is stopped and the output voltage is latched to a voltage representative of the second logic level voltage.

Reduction in power consumption of a semiconductor device is achieved. The semiconductor device includes: a first circuit operating at a first power supply voltage and a second circuit operating at a second power supply voltage and including a level shift unit and a switch unit, the first circuit is configured of a low-breakdown-voltage n-type transistor that is an SOTB transistor, and the switch unit is configured of an n-type transistor that is an SOTB transistor. A second power supply voltage is higher than a first power supply voltage, and an impurity concentration of a channel formation region of the n-type transistor is higher than an impurity concentration of a channel formation region of the low-breakdown-voltage n-type transistor.

A level shifter for outputting an output voltage having a voltage level range different from a voltage level range of a received input voltage is disclosed. The level shifter includes: a current mirror configured to copy a reference current flowing through a first mirror transistor to a second mirror transistor; a current mirror control circuit electrically connected to the current mirror by a sink node and including a plurality of control transistors configured to control the current mirror; and an output circuit configured to output an output voltage based on a voltage level of the sink node, wherein a first control transistor of the plurality of control transistors receives the output voltage fed back to a gate terminal of the first control transistor, and a second control transistor of the plurality of control transistors receives an inverted output voltage fed back to a gate terminal of the second control transistor.

A voltage level shifter for an SRAM device includes a level shifter input and provides a second voltage level. A voltage input terminal receives a first signal at a first voltage level and an inverter having an input and an output with the voltage input terminal is connected to the inverter input. A first voltage selector selectively applies an intermediate voltage to the gate of a PMOS transistor in a first complementary pair when the voltage of a complementary level shift output voltage rises to a logical 1 and a second voltage selector applies the intermediate voltage to the gate of a PMOS transistor in a second complementary pair when the voltage of the level shift output voltage node rises to a logical 1. The PMOS transistor current is thereby reduced resulting in lower energy dissipation and supporting a larger voltage separation between the first and second voltage levels.

Reduction in power consumption of a semiconductor device is achieved. The semiconductor device includes: a first circuit operating at a first power supply voltage and a second circuit operating at a second power supply voltage and including a level shift unit and a switch unit, the first circuit is configured of a low-breakdown-voltage n-type transistor that is an SOTB transistor, and the switch unit is configured of an n-type transistor that is an SOTB transistor. A second power supply voltage is higher than a first power supply voltage, and an impurity concentration of a channel formation region of the n-type transistor is higher than an impurity concentration of a channel formation region of the low-breakdown-voltage n-type transistor.

A high-voltage level shifter circuit that is capable of level shifting a signal from a low-voltage rail to a high-voltage rail for effective gate driving of a top power switch, with a short propagation delay and a high common-mode transient immunity (CMTI). The high CMTI high-voltage level shifter circuit can include a differential input and isolation stage, a high dv/dt sensor and cancellation stage, at least one differential and common-mode gain stage, and an output buffer stage.