A method, implemented in a serializer for quarter rate serialization, is disclosed. The method includes receiving a plurality of in-phase and quarter-phase clock signals defining a quarter phase clock. The method includes receiving a quarter rate data input and sequentially outputting data in accordance with the quarter phase clock. The method includes receiving at least one data input from amongst the quarter rate input and outputting a first logical output in accordance with the in-phase clock signal and the quarter-phase clock signal. The method includes receiving said at least one data input and outputting a second logical output in accordance a complementary in-phase clock signal and a complementary quarter-phase clock signal. The method includes outputting, an output associated with the branch.

A semiconductor device capable of stable operation with low power consumption is provided. A logic circuit having a circuit configuration using a transistor including an oxide semiconductor in a channel formation region is included. The logic circuit is a two-input/two-output two-wire logic circuit. Transistors included in the logic circuit each include a gate and a back gate. An input terminal is electrically connected to one of a gate and a back gate of a transistor electrically connected to a wiring for supplying a high power supply potential. An output terminal is connected to the other of the gate and the back gate of the transistor electrically connected to the wiring for supplying a high power supply potential. An output terminal is electrically connected to one of a source and a drain of a transistor electrically connected to a wiring for supplying a low power supply potential. A gate or a back gate of the transistor electrically connected to the wiring for supplying a low power supply potential is electrically connected to an input terminal.

An adiabatic logic cell including a first MOS transistor coupling a node for applying a periodic variable supply voltage of the cell to a floating node for providing an output logic signal of the cell, wherein the first transistor is a dual-gate transistor including a front gate coupled to a node for applying an input logic signal of the cell, and a back gate coupled to a node for applying a first periodic variable bias voltage.

An adiabatic logic cell including a first MOS transistor coupling a node for applying a periodic variable supply voltage of the cell to a floating node for providing an output logic signal of the cell, wherein the first transistor is a dual-gate transistor including a front gate coupled to a node for applying an input logic signal of the cell, and a back gate coupled to a node for applying a first periodic variable bias voltage.

A nonvolatile memory cell includes a first voltage supply node, a second voltage supply node, an output node, a resistive random access memory device having a first electrode and a second electrode, the first electrode connected to the first voltage supply node, at least one p-channel transistor connected between the second electrode of the resistive random access memory device and the output node, at least one n-channel transistor connected between the output node and the second voltage supply node, and an inverter connected between the output node and a gate of the at least one n-channel transistor.

A semiconductor device capable of stable operation with low power consumption is provided. A logic circuit having a circuit configuration using a transistor including an oxide semiconductor in a channel formation region is included. The logic circuit is a two-input/two-output two-wire logic circuit. Transistors included in the logic circuit each include a gate and a back gate. An input terminal is electrically connected to one of a gate and a back gate of a transistor electrically connected to a wiring for supplying a high power supply potential. An output terminal is connected to the other of the gate and the back gate of the transistor electrically connected to the wiring for supplying a high power supply potential. An output terminal is electrically connected to one of a source and a drain of a transistor electrically connected to a wiring for supplying a low power supply potential. A gate or a back gate of the transistor electrically connected to the wiring for supplying a low power supply potential is electrically connected to an input terminal.

A nonvolatile memory cell includes a first voltage supply node, a second voltage supply node, an output node, a resistive random access memory device having a first electrode and a second electrode, the first electrode connected to the first voltage supply node, at least one p-channel transistor connected between the second electrode of the resistive random access memory device and the output node, at least one n-channel transistor connected between the output node and the second voltage supply node, and an inverter connected between the output node and a gate of the at least one n-channel transistor.

A low-leakage resistive random access memory cell includes a complementary pair of bit lines and a switch node. A first ReRAM device is connected to a first one of the bit lines. A p-channel transistor has a source connected to the ReRAM device, a drain connected to the switch node, and a gate connected to a bias potential. A second ReRAM device is connected to a second one of the bit lines. An n-channel transistor has a source connected to the ReRAM device a drain connected to the switch node, and a gate connected to a bias potential.

A low-leakage resistive random access memory cell includes a complementary pair of bit lines and a switch node. A first ReRAM device is connected to a first one of the bit lines. A p-channel transistor has a source connected to the ReRAM device, a drain connected to the switch node, and a gate connected to a bias potential. A second ReRAM device is connected to a second one of the bit lines. An n-channel transistor has a source connected to the ReRAM device a drain connected to the switch node, and a gate connected to a bias potential.

A method, implemented in a serializer for quarter rate serialization, is disclosed. The method includes receiving a plurality of in-phase and quarter-phase clock signals defining a quarter phase clock. The method includes receiving a quarter rate data input and sequentially outputting data in accordance with the quarter phase clock. The method includes receiving at least one data input from amongst the quarter rate input and outputting a first logical output in accordance with the in-phase clock signal and the quarter-phase clock signal. The method includes receiving said at least one data input and outputting a second logical output in accordance a complementary in-phase clock signal and a complementary quarter-phase clock signal. The method includes outputting, an output associated with the branch.