An error correction device according to the technical idea of the present disclosure includes a syndrome generation circuit configured to receive data and generate a plurality of syndromes for the data, a partial coefficient generation circuit configured to generate partial coefficient information on a part of a coefficient of an error location polynomial by using the data while the plurality of syndromes are generated, an error location determination circuit configured to determine the coefficient of the error location polynomial based on the plurality of syndromes and the partial coefficient information, and obtain a location of an error in the data by using the error location polynomial, and an error correction circuit configured to correct the error in the data according to the location of the error.

Memory controllers, devices and associated methods are disclosed. In one embodiment, a memory controller includes write circuitry to transmit write data to a memory device, the write circuitry includes a write error detection correction (EDC) encoder to generate first error information associated with the write data. Data bus inversion (DBI) circuitry conditionally inverts data bits associated with each of the write data words based on threshold criteria. Read circuitry receives read data from the memory device. The read circuitry includes a read EDC encoder to generate second error information associated with the received read data. Logic evaluates the first and second error information and conditionally reverse-inverts at least a portion of the read data based on the decoding.

Provided are a data processing method and device. The data processing method includes: performing Polar code encoding on an input bit sequence having a length of K bits to obtain an encoded bit sequence having a length of N bits, and determining a bit sequence to be transmitted from the encoded bit sequence according to a data characteristic of an information bit sequence and a predetermined rate matching scheme. K is a positive integer and N is a positive integer greater than or equal to K.

Memory controllers, devices and associated methods are disclosed. In one embodiment, a memory controller includes write circuitry to transmit write data to a memory device, the write circuitry includes a write error detection correction (EDC) encoder to generate first error information associated with the write data. Data bus inversion (DBI) circuitry conditionally inverts data bits associated with each of the write data words based on threshold criteria. Read circuitry receives read data from the memory device. The read circuitry includes a read EDC encoder to generate second error information associated with the received read data. Logic evaluates the first and second error information and conditionally reverse-inverts at least a portion of the read data based on the decoding.

Memory controllers, devices and associated methods are disclosed. In one embodiment, a memory controller includes write circuitry to transmit write data to a memory device, the write circuitry includes a write error detection correction (EDC) encoder to generate first error information associated with the write data. Data bus inversion (DBI) circuitry conditionally inverts data bits associated with each of the write data words based on threshold criteria. Read circuitry receives read data from the memory device. The read circuitry includes a read EDC encoder to generate second error information associated with the received read data. Logic evaluates the first and second error information and conditionally reverse-inverts at least a portion of the read data based on the decoding.

A semiconductor device includes a selection input circuit and a core data generation circuit. The selection input circuit is configured to generate selection data, a selection parity, and a selection data control signal from data, a parity, and a data control signal during a write operation and sets the selection data, the selection parity, and the selection data control signal to a predetermined logic level during a pattern write operation. The core data generation circuit is configured to receive drive data, a drive parity, and a drive data control signal driven by the selection data, the selection parity, and the selection data control signal to generate core data which are stored into a memory core according to whether an error correction operation and a data inversion operation is performed.

A system is provided to receive, by a controller, a first request to read a first page of data stored in a storage device which comprises a plurality of non-volatile memory units. The system accumulates, by a calculation module, a syndrome associated with the first page of data to obtain a syndrome weight. In response to determining that the syndrome weight is less than a predetermined threshold, the system writes, by the controller, the first page of data to a destination page of the storage device. In response to determining that the syndrome weight is greater than the predetermined threshold and that a current number of retries is less than a predetermined number: the system executes a retry process between the calculation module and a data flip engine of the controller to update the syndrome weight; and the system increments the current number of retries.

A semiconductor device includes a selection input circuit and a core data generation circuit. The selection input circuit is configured to generate selection data, a selection parity, and a selection data control signal from data, a parity, and a data control signal during a write operation and sets the selection data, the selection parity, and the selection data control signal to a predetermined logic level during a pattern write operation. The core data generation circuit is configured to receive drive data, a drive parity, and a drive data control signal driven by the selection data, the selection parity, and the selection data control signal to generate core data which are stored into a memory core according to whether an error correction operation and a data inversion operation is performed.

An error correction code (ECC) decoder includes a syndrome calculation block and a path controller. The syndrome calculation block is configured to perform a syndrome calculation for generating a syndrome from a codeword. The path controller is configured to output data transmitted through first to third paths. The first path is a path for transmitting the codeword to the path controller when no error is detected. The second path includes a single-error decoding logic circuit, and the single-error decoding logic circuit corrects a single error of the codeword to transmit the corrected codeword to the path controller through the second path. The third path includes a multi-error decoding logic circuit, and the multi-error decoding logic circuit corrects at least two errors of the codeword to transmit the corrected codeword to the path controller.

A system is provided to receive, by a controller, a first request to read a first page of data stored in a storage device which comprises a plurality of non-volatile memory units. The system accumulates, by a calculation module, a syndrome associated with the first page of data to obtain a syndrome weight. In response to determining that the syndrome weight is less than a predetermined threshold, the system writes, by the controller, the first page of data to a destination page of the storage device. In response to determining that the syndrome weight is greater than the predetermined threshold and that a current number of retries is less than a predetermined number: the system executes a retry process between the calculation module and a data flip engine of the controller to update the syndrome weight; and the system increments the current number of retries.