A method of assisting with authenticating a workpiece is provided. In another aspect, ions are generated, accelerated in an accelerator, an isotope is created, and then the isotope is implanted within a workpiece to assist with authenticating of the workpiece. A further aspect includes a workpiece substrate, a visual marker and an isotope internally located within the substrate adjacent the visual marker.

A method of producing an implantation ion energy filter, suitable for processing a power semiconductor device. In one example, the method includes creating a preform having a first structure; providing an energy filter body material; and structuring the energy filter body material by using the preform, thereby establishing an energy filter body having a second structure.

A system for transporting substrates and precisely alignment the substrates to shadow masks. The system decouples the functions of transporting the substrates, vertically aligning the substrates, and horizontally aligning the substrates. The transport system includes a carriage upon which plurality of pedestals are loosely positioned, each of the pedestals includes a base having vertical alignment wheels to place the substrate in precise vertical alignment. Two sidebars are configured to freely slide on the base. Each of the sidebars includes a set of horizontal alignment wheels that precisely align the substrate in the horizontal direction. Substrate support claws are attached to the sidebars in precise alignment to the vertical alignment wheels and the horizontal alignment wheels.

A system for transporting substrates and precisely align the substrates horizontally and vertically. The system decouples the functions of transporting the substrates, vertically aligning the substrates, and horizontally aligning the substrates. The transport system includes a carriage upon which plurality of chuck assemblies are loosely positioned, each of the chuck assemblies includes a base having vertical alignment wheels to place the substrate in precise vertical alignment. A pedestal is configured to freely slide on the base. The pedestal includes a set of horizontal alignment wheels that precisely align the pedestal in the horizontal direction. An electrostatic chuck is magnetically held to the pedestal.

A manufacturing method of a semiconductor device according to an embodiment implants impurities into a central portion of a polishing target film or an outer peripheral portion of the central portion of the polishing target film to cause an impurity concentration in the outer peripheral portion of the polishing target film and an impurity concentration in the central portion thereof to be different from each other, thereby modifying a surface of the polishing target film. The modified surface of the polishing target film is polished by a CMP method.

There is provided a semiconductor device manufacturing method including: forming a first mask film composed of a polymer having a urea bond by supplying a raw material to a surface of the substrate for polymerization; forming a second mask inorganic film to be laminated on the first mask film; forming a pattern on the first mask film and the second mask inorganic film and performing an ion implantation on the surface of the substrate; removing the second mask inorganic film after the ion implantation; and removing the first mask film by heating the substrate after the ion implantation and depolymerizing the polymer.

A device for implanting particles in a substrate comprises a particle source and a particle accelerator for generating an ion beam of positively charged ions. The device also comprises a substrate holder and an energy filter, which is arranged between the particle accelerator and the substrate holder. The energy filter is a microstructured membrane with a predefined structural profile for setting a dopant depth profile and/or a defect depth profile produced in the substrate by the implantation. The device also comprises at least one passive braking element for the ion beam. The at least one passive braking element is arranged between the particle accelerator and the substrate holder and is spaced apart from the energy filter.

A manufacturing method of a semiconductor device according to an embodiment implants impurities into a central portion of a polishing target film or an outer peripheral portion of the central portion of the polishing target film to cause an impurity concentration in the outer peripheral portion of the polishing target film and an impurity concentration in the central portion thereof to be different from each other, thereby modifying a surface of the polishing target film. The modified surface of the polishing target film is polished by a CMP method.

A method for forming reliefs on the surface of a substrate, including a first implantation of ions in the substrate according to a first direction; a second implantation of ions in the substrate according to a second direction that is different from the first direction; at least one of the first and second implantations is carried out through at least one mask having at least one pattern; an etching of areas of the substrate having received by implantation a dose greater than or equal to a threshold, selectively to the areas of the substrate that have not received via implantation a dose greater than said threshold; the parameters of the first and second implantations being adjusted in such a way that only areas of the substrate that have been implanted both during the first implantation and during the second implantation receive a dose greater than or equal to said threshold.

A method of fabricating non-uniform gratings includes implanting different densities of ions into corresponding areas of a substrate, patterning, e.g., by lithography, a resist layer on the substrate, etching the substrate with the patterned resist layer, and then removing the resist layer from the substrate, leaving the substrate with at least one grating having non-uniform characteristics associated with the different densities of ions implanted in the areas. The method can further include using the substrate having the grating as a mold to fabricate a corresponding grating having corresponding non-uniform characteristics, e.g., by nanoimprint lithography.