Two classes of cyclic tin compounds, trioxa-aza-1-stannabicyclo-[3.3.3]-undecanes, also referred to as stannatranes, and tetraaza-1-stannabicyclo-[3.3.3] undecanes, also referred to as azastannatranes, are described, as are methods for their preparation. These cyclic tin compounds are resistant to rearrangement and the generation of dialkyltin impurities is not observed during the synthesis, purification or deposition of these compounds to form oxostannate films.

The present invention relates to a process for the production of structured, highly efficient solar cells and of photovoltaic elements which have regions of different doping. The invention likewise relates to the solar cells having increased efficiency produced in this way.

Disclosed are a low-temperature polycrystalline silicon thin film transistor (LTPS TFT), a method for fabricating the same, an array substrate, a display panel, and a display device. The LTPS TFT includes an active layer, a source, a drain, a gate, and a gate insulating layer which are arranged on a substrate. The gate insulating layer is arranged between the active layer and the gate, and a graphene oxide layer which is arranged between the active layer and the gate insulating layer. Since the graphene oxide layer is arranged between the active layer and the gate insulating layer, the interface between the active layer and the gate insulating layer of polycrystalline (P-Si) has a reduced roughness and interfacial defect density, and a pre-cleaning process is not necessary for the gate insulating layer.

To reduce a hydroxy group in a silicon oxide film formed at a low temperature and obtain a silicon oxide film with an excellent film quality, (a) accommodating a substrate on a surface of which a silicon oxide film formed at a processing temperature of 300° C. or lower is formed in a processing container, (b) plasma-exciting a hydrogen gas, and a step of supplying hydrogen active species generated in (b) to the substrate are performed.

A composition is provided including a resin including one or more silicon-based materials, one or more organic-based materials, or a combination of silicon-based materials and organic-based materials. The composition further includes a first solvent having a boiling point from 140° C. to 250° C. and a second solvent having a boiling point from 50° C. to 110° C., wherein the a weight ratio of the first solvent to the second solvent is from 1:1 to 1:5. Methods for applying coatings to substrates are also provided.

A composition comprising a carbosilane polymer formed from at least one carbosilane monomer and at least one carbonyl contributing monomer. In some embodiments, the composition is suitable as gap filling and planarizing material, and may optionally include at least one chromophore for photolithography applications.

A brush polymer for a photoresist, a photoresist composition, and a method of manufacturing an integrated circuit device, the brush polymer including a core and a plurality of side polymer chains, the plurality of side polymer chains being bonded to the core and extending from the core to form a bottle-brush polymer or a star-brush polymer, together with the core, wherein each of the plurality of side polymer chains includes a first repeating unit represented by Formula 1 and a second repeating unit represented by Formula 2:

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A method of manufacturing a semiconductor device includes forming a polymer mixture over a substrate, curing the polymer mixture to form a polymer material, and patterning the polymer material. The polymer mixture includes a polymer precursor, a photosensitizer, a cross-linker, and a solvent. The polymer precursor may be a polyamic acid ester. The cross-linker may be tetraethylene glycol dimethacrylate. The photosensitizer includes 4-phenyl-2-(piperazin-1-yl)thiazole. The mixture may further include an additive.

A method for forming a planarization layer is provided that can include depositing an organic planarization layer on a deposition surface using a spin on deposition method; and treating the deposited organic planarization layer with a solvent anneal. In some embodiments, a vapor of solvent is passed over the deposited organic planarization layer to increase uniformity of the deposited organic planarization layer. The method may further include curing the deposited organic planarization layer with a thermal anneal.

To provide a low dielectric constant siliceous film manufacturing composition capable of forming a low dielectric constant siliceous film with dispersed pores having excellent mechanical properties and stable electrical properties. [Means] The present invention provides a low dielectric constant siliceous film manufacturing composition comprising: a polysiloxane, a pore-generating material, a condensation catalyst generator, and a solvent.