The present disclosure describes epitaxial oxide devices with impact ionization. In some embodiments, a semiconductor device comprises: a first semiconductor layer; a second semiconductor layer coupled to the first semiconductor layer; and a first and a second electrical contact coupled to the second and first semiconductor layers, respectively. The first semiconductor layer can comprise a first epitaxial oxide material with a first bandgap and an impact ionization region. The second semiconductor layer can comprise a second epitaxial oxide material with a second bandgap that is wider than the first bandgap.

The present disclosure provides techniques for epitaxial oxide materials, structures and devices. In some embodiments, a semiconductor structure includes an epitaxial oxide heterostructure, comprising: a substrate; a first epitaxial oxide layer comprising Li(Al.sub.x1Ga.sub.1−x1)O.sub.2 wherein 0≤x1≤1; and a second epitaxial oxide layer comprising (Al.sub.x2Ga.sub.1−x2).sub.2O.sub.3 wherein 0≤x2≤1.

The present disclosure describes epitaxial oxide integrated circuits. In some embodiments, an integrated circuit comprises: a field effect transistor (FET), comprising: a substrate comprising a first oxide material; an epitaxial buried ground plane on the substrate and comprising a second oxide material; an epitaxial buried oxide layer on the epitaxial buried ground plane and comprising a third oxide material; an epitaxial semiconductor layer on the epitaxial buried oxide layer and comprising a fourth oxide material with a first bandgap; a gate layer on the epitaxial semiconductor layer and comprising a fifth oxide material with a second bandgap; electrical contacts; and a waveguide coupled to the field effect transistor. The waveguide can comprise: the epitaxial buried ground plane; the epitaxial buried oxide layer; and a signal conductor, wherein the epitaxial buried oxide layer is between the signal conductor and the epitaxial buried ground plane.

The present disclosure provides techniques for epitaxial oxide materials, structures and devices. In some embodiments, a semiconductor structure includes an epitaxial oxide heterostructure, comprising: a substrate; a first epitaxial oxide layer comprising (Ni.sub.x1Mg.sub.y1Zn.sub.1−x1−yl).sub.2GeO.sub.4 wherein 0≤x1≤1 and 0≤y1≤1; and a second epitaxial oxide layer comprising (Ni.sub.x2Mg.sub.y2Zn.sub.1−x2−y2).sub.2GeO.sub.4 wherein 0≤x2≤1 and 0≤y2≤1. In some cases, either: x1≠x2 and y1=y2; x1=x2 and y1≠y2; or x1≠x2 and y1≠y2. In some embodiments, a semiconductor structure includes an epitaxial oxide heterostructure, comprising: a substrate; a first epitaxial oxide layer comprising (Mg.sub.x1Zn.sub.1−x1)(Al.sub.y1Ga.sub.1−y1).sub.2O.sub.4 wherein 0≤x1≤1 and 0≤y1≤1; and a second epitaxial oxide layer comprising (Ni.sub.x2Mg.sub.y2Zn.sub.1−x2−y2).sub.2GeO.sub.4 wherein 0≤x2≤1 and 0≤y2≤1.

Disclosed is a method of manufacturing a gallium oxide thin film for a power semiconductor using a dopant activation technology that maximizes dopant activation effect and rearrangement effect of lattice in a grown epitaxial at the same time by performing in-situ annealing in a growth condition of a nitrogen atmosphere at the same time as the growth of a doped layer is finished.

A composition of matter comprising: a graphene layer carried directly on a sapphire, Si, SiC, Ga.sub.2O.sub.3 or group III-V semiconductor substrate; wherein a plurality of holes are present through said graphene layer; and wherein a plurality of nanowires or nanopyramids are grown from said substrate in said holes, said nanowires or nanopyramids comprising at least one semiconducting group III-V compound.

The present invention relates to a method for manufacturing a diamond substrate, and more particularly, to a method of growing diamond after forming a structure of an air gap having a crystal correlation with a lower substrate by heat treatment of a photoresist pattern and an air gap forming film material on a substrate such as sapphire (Al.sub.2O.sub.3). Through such a method, a process is simplified and the cost is lowered when large-area/large-diameter single crystal diamond is heterogeneously grown, stress due to differences in a lattice constant and a coefficient of thermal expansion between the heterogeneous substrate and diamond is relieved, and an occurrence of defects or cracks is reduced even when a temperature drops, such that a high-quality single crystal diamond substrate may be manufactured and the diamond substrate may be easily self-separated from the heterogeneous substrate.

A base substrate includes a supporting substrate comprising aluminum oxide, and a base crystal layer provided on a main face of the supporting substrate, comprising a crystal of a nitride of a group 13 element and having a crystal growth surface. At lease one of a metal of a group 13 element and a reaction product of a material of the supporting substrate and the crystal of the nitride of the group 13 element is present between the raised part and the supporting substrate. The reaction product contains at least aluminum and a group 13 element.

Methods and systems for forming complex oxide films are provided. Also provided are complex oxide films and heterostructures made using the methods and electronic devices incorporating the complex oxide films and heterostructures. In the methods pulsed laser deposition is conducted in an atmosphere containing a metal-organic precursor to form highly stoichiometric complex oxides.

A semiconductor device including at least a crystalline oxide semiconductor layer, which has a band gap of 3 eV or more and a field-effect mobility of 30 cm.sup.2/V.Math.s or higher.