Provided is a method of forming a tin oxide layer using a tin metal target which forms the tin oxide layer on a glass substrate using the tin metal target. The present invention provides the method of forming a tin oxide layer using a tin metal target, which includes forming a tin oxide buffer layer (SnO.sub.2) on the glass substrate by sputtering using the tin metal target and forming a tin oxide (SnO.sub.2−x) semiconductor layer (0<x≦0.01) on the tin oxide buffer layer by sputtering using the tin metal target.

A novel metal oxide is provided. The metal oxide includes a crystal. The crystal has a structure in which a first layer, a second layer, and a third layer are stacked. The first layer, the second layer, and the third layer are each substantially parallel to a formation surface of the metal oxide. The first layer includes a first metal and oxygen. The second layer includes a second metal and oxygen. The third layer includes a third metal and oxygen. The first layer has an octahedral structure. The second layer has a trigonal bipyramidal structure or a tetrahedral structure. The third layer has a trigonal bipyramidal structure or a tetrahedral structure. The octahedral structure of the first layer includes an atom of the first metal at a center. The trigonal bipyramidal structure or the tetrahedral structure of the second layer includes an atom of the second metal at a center. The trigonal bipyramidal structure or the tetrahedral structure of the third layer includes an atom of the third metal at a center. The valence of the first metal is equal to the valence of the second metal. The valence of the first metal is different from the valence of the third metal.

A device for coating semiconductor/semiconductor precursor particles on a flexible substrate and a preparation method of a semiconducting thin film, wherein the device includes: a container for a first and second solvent substantially immiscible; injection means for injecting a predetermined dispersion volume of at least one layered semiconductor particle material or its precursor(s), occurring at a liquid-liquid interface formed within the container and between the first and second solvent, and creating a particle film at the liquid-liquid interface; a first support means; substrate extracting means; substrate supply means; compression means, reducing a distance between particles and push the film onto the substrate, wherein the compression means includes several pushing means mounted on a drive device, wherein at least two of the several pushing means are at least partially submerged in the second solvent during drive device rotation, and moved through the second solvent toward the first support means.

A transistor including a channel layer including an oxide semiconductor material and methods of making the same. The transistor includes a channel layer having a first oxide semiconductor layer having a first oxygen concentration, a second oxide semiconductor layer having a second oxygen concentration and a third oxide semiconductor layer having a third oxygen concentration. The second oxide semiconductor layer is located between the first semiconductor oxide layer and the third oxide semiconductor layer. The second oxygen concentration is lower than the first oxygen concentration and the third oxygen concentration.

Embodiments disclosed herein comprise semiconductor devices with two dimensional (2D) semiconductor channels and methods of forming such devices. In an embodiment, the semiconductor device comprises a source contact and a drain contact. In an embodiment, a 2D semiconductor channel is between the source contact and the drain contact. In an embodiment, the 2D semiconductor channel is a shell.

A transistor includes a first gate electrode, a composite channel layer, a first gate dielectric layer, and source/drain contacts. The composite channel layer is over the first gate electrode and includes a first capping layer, a crystalline semiconductor oxide layer, and a second capping layer stacked in sequential order. The first gate dielectric layer is located between the first gate electrode and the composite channel layer. The source/drain contacts are disposed on the composite channel layer.

To reduce power consumption and suppress display degradation of a liquid crystal display device. To suppress display degradation due to an external factor such as temperature. A transistor whose channel formation region is formed using an oxide semiconductor layer is used for a transistor provided in each pixel. Note that with the use of a high-purity oxide semiconductor layer, off-state current of the transistor at a room temperature can be 10 aA/μm or less and off-state current at 85° C. can be 100 aA/μm or less. Consequently, power consumption of a liquid crystal display device can be reduced and display degradation can be suppressed. Further, as described above, off-state current of the transistor at a temperature as high as 85° C. can be 100 aA/μm or less. Thus, display degradation of a liquid crystal display device due to an external factor such as temperature can be suppressed.

A method for making a three-dimensional semiconductor structure includes: providing a substrate, forming a first insulating layer on the substrate, and defining at least one channel hole in the first insulating layer; forming a first epitaxial layer in each channel hole and forming a second epitaxial layer stacked on the first epitaxial layer; forming a sacrificial layer on the first insulating layer and exposing the second epitaxial layer relative to the sacrificial layer, forming another first epitaxial layer on the second epitaxial layer; forming a second insulating layer on the sacrificial layer, and forming another second epitaxial layer stacking on the another first epitaxial layer; repeating to form a plurality of sacrificial layers and a plurality of second insulating layers alternately stacked on the first insulating layer, and repeating to form a plurality of first epitaxial layers and a plurality of second epitaxial layers alternately stacked on the substrate.

There is provided a crystalline film including, a crystalline metal oxide as a major component; a corundum structure; a dislocation density of 1×10.sup.7 cm.sup.−2 or less; and a surface area of 10 mm.sup.2 or more. There is provided a method of producing a crystalline film comprising, forming a first lateral crystal growth layer on a substrate by first lateral crystal growth; placing a mask on the first lateral crystal growth layer; and forming a second lateral crystal growth layer by second lateral crystal growth.

An optoelectronic semiconductor light emitting device configured to emit light having a wavelength in the range from about 150 nm to about 425 nm is disclosed. In embodiments, the device comprises a substrate having at least one epitaxial semiconductor layer disposed thereon, wherein each of the one or more epitaxial semiconductor layers comprises a metal oxide. Also disclosed is an optoelectronic semiconductor device for generating light of a predetermined wavelength comprising a substrate and an optical emission region. The optical emission region has an optical emission region band structure configured for generating light of the predetermined wavelength and comprises one or more epitaxial metal oxide layers supported by the substrate.