Disclosed herein is an X-ray detector comprises: an X-ray absorption layer configured to absorb X-ray photons; an electronics layer comprising an electronics system configured to process or interpret signals generated by the X-ray photons incident on the X-ray absorption layer; and a temperature driver in the X-ray absorption layer or the electronics layer.

A method is provided for preparing a semiconductor-on-insulator structure comprising a flowable insulating layer or a reflowable insulating layer.

The present disclosure provides a method for wafer bonding, including providing a wafer, forming a sacrificial layer on a top surface of the first wafer, trimming an edge of the first wafer to obtain a first wafer area, cleaning the top surface of the first wafer, removing the sacrificial layer, and bonding the top surface of the first wafer to a second wafer having a second wafer area greater than the first wafer area.

The present invention provides a peeling off method without giving damage to the peeled off layer, and aims at being capable of peeling off not only a peeled off layer having a small area but also a peeled off layer having a large area over the entire surface at excellent yield ratio. The metal layer or nitride layer 11 is provided on the substrate, and further, the oxide layer 12 being contact with the foregoing metal layer or nitride layer 11 is provided, and furthermore, if the lamination film formation or the heat processing of 500 C. or more in temperature is carried out, it can be easily and clearly separated in the layer or on the interface with the oxide layer 12 by the physical means.

A manufacturing method including supplying a first substrate including a first face designated front face, the front face being made of a III-V type semiconductor, supplying a second substrate, forming a radical oxide layer on the front face of the first substrate by executing a radical oxidation, assembling, by a step of direct bonding, the first substrate and the second substrate so as to form an assembly including the radical oxide layer intercalated between the first and second substrates, executing a heat treatment intended to reinforce the assembly interface, and making disappear, at least partially, the radical oxide layer.

A multilayer device includes a substrate having a trench extending along a first surface of the substrate. A first layer disposed on the first surface of the substrate, the first layer comprising a given surface and another surface. A dielectric layer is formed between the given surface of the first layer and the first surface of the substrate. An active region disposed on the other surface of the first layer overlying the trench, wherein at least a portion of the active region resides substantially above a region defined by the trench.

Methods for mounting and dismounting thin and/or bowed semiconductor-on-diamond wafers to a carrier are disclosed that flatten said wafers and provide mechanical support to enable efficient semiconductor device processing on said semiconductor-on-diamond wafers.

A substrate bonding apparatus includes a substrate susceptor to support a first substrate, a substrate holder over the substrate susceptor to hold a second substrate, the substrate holder including a plurality of independently moveable holding fingers, and a chamber housing to accommodate the substrate susceptor and the substrate holder.

Provided is a method of manufacturing a nanorod. The method comprising comprises the steps of: providing a growth substrate and a support substrate; epitaxially growing a nanomaterial layer onto one surface of the growth substrate; forming a sacrificial layer on one surface of the support substrate; bonding the nanomaterial layer with the sacrificial layer; separating the growth substrate from the nanomaterial layer; flattening the nanomaterial layer; forming a nanorod by etching the nanomaterial layer; and separating the nanorod by removing the sacrificial layer.

A method for bonding a first substrate with a second substrate at respective contact faces of the substrates with the following steps: holding the first substrate to a first sample holder surface of a first sample holder with a holding force F.sub.H1 and holding the second substrate to a second sample holder surface of a second sample holder with a holding force F.sub.H2; contacting the contact faces at a bond initiation point and heating at least the second sample holder surface to a heating temperature T.sub.H; bonding of the first substrate with the second substrate along a bonding wave running from the bond initiation point to the side edges of the substrates, wherein the heating temperature T.sub.H is reduced at the second sample holder surface during the bonding.