A micro-electromechanical systems (MEMS) device includes a MEMS substrate having a first opening, a second opening, and a membrane layer comprising a first membrane disposed over the first opening and a second membrane disposed over the second opening. The MEMS device also includes a carrier substrate bonded to a first side of the MEMS substrate, the carrier substrate having a first cavity exposing the first membrane and a second cavity exposing the second membrane, and a cap substrate bonded to a second side of the MEMS substrate. The cap substrate has a third cavity connected to the first opening and a fourth cavity connected to the second opening. The first membrane, the first cavity, and the third cavity are part of a pressure sensor. The fourth cavity extends completely through the cap substrate. The second membrane, the second cavity, and the fourth cavity are part of a microphone.

A method for producing a SOI wafer that includes implanting at least one type of gas ion selected from a hydrogen ion and a rare gas ion from a surface of a bond wafer formed of a silicon single crystal to form an ion implanted layer, bonding the ion-implanted surface of the bond wafer to a surface of a base wafer formed of a silicon single crystal through a silicon oxide film formed on the base wafer surface, delaminating the bond wafer at the ion implanted layer by performing delamination heat treatment to fabricate a SOI wafer having a buried oxide film layer and a SOI layer on the base wafer, and performing flattening heat treatment on the SOI wafer in an atmosphere containing argon gas.

Disclosed herein is a method of bonding substrates, a microchip, and a method of manufacturing the microchip capable of joining two substrates in a higher adhered state even when at least one of the substrate has a warpage or a roll. A method of bonding a first substrate and a second substrate each of which is made of glass or a resin comprises: a surface activating step for activating each of joining surfaces of the first substrate and the second substrate; and a pressurizing step for pressurizing the first substrate and the second substrate in a state that the first substrate and the second substrate are stacked such that respective joining surfaces contact each other. The joining surface of the first substrate and/or the joining surface of the second substrate are constituted with a plurality of joining regions segmented to be separate from one another by a segmenting recessed portion.

A device and method is described for producing an electrically conductive direct bond between a bonding side of a first substrate and a bonding side of a second substrate. A workspace is included that can be closed, gas-tight, against the environment and can be supplied with a vacuum. The workspace includes a) at least one plasma chamber for modifying at least one of the bonding sides and at least one bonding chamber for bonding the bonding sides, and/or b) at least one combined bonding/plasma chamber for modifying at least one of the bonding sides and for bonding the bonding sides.

Disclosed are a substrate bonding apparatus and a method of manufacturing a semiconductor device. The substrate bonding apparatus comprises vacuum pumps, a first chuck engaged with the vacuum pumps and adsorbing a first substrate at vacuum pressure of the vacuum pumps, and a pushing unit penetrating a center of the first chuck and pushing the first substrate away from the first chuck. The first chuck comprises adsorption sectors providing different vacuum pressures in an azimuth direction to the first substrate.

A method for manufacturing a bonded SOI wafer, including depositing a polycrystalline silicon layer on a base wafer, forming an insulator film on a bond wafer, bonding the bond wafer and a polished surface of the silicon layer with the insulator film interposed, and thinning the bond wafer, wherein a silicon single crystal wafer having a resistivity of 100 -cm or more is the base wafer, the step of depositing the silicon layer includes a stage of forming an oxide film on the surface of the base wafer, and the silicon layer is deposited between 1050 C. and 1200 C. Accordingly, the method enables a polycrystalline silicon layer to be deposited while preventing the progress of single crystallization even through a heat treatment step in the SOI wafer manufacturing process or a heat treatment step in the device manufacturing process and can improve throughput in the polycrystalline silicon layer depositing step.

A method for forming a direct hybrid bond and a device resulting from a direct hybrid bond including a first substrate having a first set of metallic bonding pads, preferably connected to a device or circuit, capped by a conductive barrier, and having a first non-metallic region adjacent to the metallic bonding pads on the first substrate, a second substrate having a second set of metallic bonding pads capped by a second conductive barrier, aligned with the first set of metallic bonding pads, preferably connected to a device or circuit, and having a second non-metallic region adjacent to the metallic bonding pads on the second substrate, and a contact-bonded interface between the first and second set of metallic bonding pads capped by conductive barriers formed by contact bonding of the first non-metallic region to the second non-metallic region.

A method is disclosed that includes operations as follows. With an ion-implanted layer which is disposed between an epitaxial layer and a first semiconductor substrate, the epitaxial layer is bonded directly to a second semiconductor substrate. The ion-implanted layer is split to separate the first semiconductor substrate from the epitaxial layer completely.

Methods for mounting and dismounting thin and/or bowed semiconductor-on-diamond wafers to a carrier are disclosed that flatten said wafers and provide mechanical support to enable efficient semiconductor device processing on said semiconductor-on-diamond wafers.

A semiconductor device has a semiconductor layer and a substrate. The semiconductor layer constitutes at least a part of a current path, and is made of silicon carbide. The substrate has a first surface supporting the semiconductor layer, and a second surface opposite to the first surface. Further, the substrate is made of silicon carbide having a 4H type single-crystal structure. Further, the substrate has a physical property in which a ratio of a peak strength in a wavelength of around 500 nm to a peak strength in a wavelength of around 390 nm is 0.1 or smaller in photoluminescence measurement. In this way, the semiconductor device is obtained to have a low on-resistance.