A laser annealing apparatus (1) according to the embodiment includes: a laser beam source (11) configured to emit a laser beam (L1) to crystallize an amorphous silicon film (101a) on a substrate (100) and to form a poly-silicon film (101b); a projection lens (13) configured to condense the laser beam to irradiate a silicon film (101); a probe beam source configured to emit a probe beam (L2); a photodetector (25) configured to detect the probe beam (L3) transmitted through the silicon film (101); a processing apparatus (26) configured to calculate a standard deviation of detection values of a detection signal output from the photodetector, and to determine a crystalline state of the crystallized film based on the standard deviation.

A laser irradiation apparatus includes a light source that generates a laser beam, a projection lens that radiates the laser beam onto a predetermined region of an amorphous silicon thin film deposited on each of a plurality of thin film transistors on a glass substrate, and a projection mask pattern provided on the projection lens and has a plurality of openings so that the laser beam is radiated onto each of the plurality of thin film transistors, wherein the projection lens radiates the laser beam onto the plurality of thin film transistors on the glass substrate, which moves in a predetermined direction, through the projection mask pattern, and the projection mask pattern is provided such that the openings are not continuous in one column orthogonal to the moving direction.

A GaN on diamond wafer and method for manufacturing the same is provided. The method comprising: disposing a GaN device or wafer on a substrate, having a nucleation layer disposed between the substrate and a GaN layer; affixing the device to a handling wafer; removing the substrate and substantially all the nucleation layer; and bonding the GaN layer to a diamond substrate.

In some embodiments, an optoelectronic semiconductor light emitting device includes a single crystal LiF substrate and an optical emission region including an epitaxial oxide layer disposed on the substrate. The optical emission region can be configured to emit light having a wavelength in a range from 150 nm to 425 nm. In some embodiments, a semiconductor structure includes a single crystal LiF substrate and an epitaxial oxide layer disposed on the substrate, where the epitaxial layer includes Mg.sub.xAl.sub.2(1x)O.sub.32x or Mg.sub.xGa.sub.2(1x)O.sub.32x where 0x1, or a polar form of Ga.sub.2O.sub.3 with a hexagonal crystal symmetry.

In some embodiments, a composition of matter includes Li and F atoms within a single crystal Ga.sub.2O.sub.3 host including a monoclinic, orthorhombic, cubic, corundum, or hexagonal crystal symmetry, or within a single crystal LiGaO.sub.2 host including an orthorhombic or trigonal crystal symmetry. In some embodiments, a method includes sublimating a lithium fluoride (LiF) bulk crystal within a Knudsen cell to provide both Li and F and co-depositing the Li and F with an elemental Ga beam under an activated oxygen environment. The method can further include growing, on a growth surface of a substrate, an epitaxial layer including the Li, the F, the Ga, and the activated oxygen within an epitaxially formed Ga.sub.2O.sub.3 or LiGaO.sub.2 host.

A semiconductor device includes: a substrate, including an upper surface and a first to a fourth side surfaces; wherein the upper surface includes a first edge connecting the first side surface and a second edge opposite to the first edge and connecting the second side surface; a first modified trace formed on the first side surface; and a semiconductor stack formed on the upper surface, including a lower surface connecting the upper surface of the substrate, and the lower surface comprises a fifth edge adjacent to the first edge and a sixth edge opposite to the fifth edge and adjacent to the second edge; wherein a shortest distance between the first edge and the fifth edge is S1 ?m, and a shortest distance between the second edge and the sixth edge is S2 ?m; wherein in a lateral view viewing from the third side surface, the first side surface forms a first acute angle with a degree of ?1 with the vertical direction, the second side surface forms a second acute angle with a degree of ?2 with the vertical direction, and a distance between the first modified trace and the upper surface in the vertical direction is D1 ?m; and wherein S1, S2, ?1, ?2 and D1 satisfy the equation: D1?0.2?(S1+S2)/tan ?a, wherein ?a=(?1+?2)/2.

A method for producing a SiC composite substrate 10 having a single crystal SiC layer 12 on a polycrystalline SiC substrate 11. After the single crystal SiC layer 12 is provided on the front surface of a holding substrate 21 including Si and having a silicon oxide film 21a on the front and back surfaces thereof to produce a single crystal SiC layer supporting body 14, a part or all of the thickness of the silicon oxide film 21a on one area or all of the back surface of the holding substrate 21 in the single crystal SiC layer supporting body 14 is removed to impart warpage to the single crystal SiC layer supporting body 14. Then, polycrystalline SiC is deposited on the single crystal SiC layer 12 by chemical vapor deposition to form the polycrystalline SiC substrate 11, and the holding substrate is physically and/or chemically removed.

A laser annealing apparatus (1) according to the embodiment includes: a laser beam source (11) configured to emit a laser beam (L1) to crystallize an amorphous silicon film (101a) on a substrate (100) and to form a poly-silicon film (101b); a projection lens (13) configured to condense the laser beam to irradiate a silicon film (101); a probe beam source configured to emit a probe beam (L2); a photodetector (25) configured to detect the probe beam (L3) transmitted through the silicon film (101); a processing apparatus (26) configured to calculate a standard deviation of detection values of a detection signal output from the photodetector, and to determine a crystalline state of the crystallized film based on the standard deviation.

A laser irradiation apparatus includes a light source that generates a laser beam, a projection lens that radiates the laser beam onto a predetermined region of an amorphous silicon thin film deposited on each of a plurality of thin film transistors on a glass substrate, and a projection mask pattern provided on the projection lens and has a plurality of openings so that the laser beam is radiated onto each of the plurality of thin film transistors, wherein the projection lens radiates the laser beam onto the plurality of thin film transistors on the glass substrate, which moves in a predetermined direction, through the projection mask pattern, and the projection mask pattern is provided such that the openings are not continuous in one column orthogonal to the moving direction.

A silicon carbide substrate includes a substrate made of silicon carbide. An emission peak of the substrate at a wavelength of 650 to 750 nm is 4.5 times or more of an emission peak of the substrate at a wavelength of 385 to 408 nm in an electronic excitation. An integral value related to an emission peak of the substrate at a wavelength of 650 to 750 nm is 15 times or more of an integral value related to an emission peak of the substrate at a wavelength of 385 to 408 nm in an electronic excitation.