A processing method of a workpiece used when the workpiece is processed is provided. The processing method of a workpiece includes a disposing step of disposing the workpiece in a gas containing a substance that generates an active species that reacts with the workpiece, a measurement step of measuring the distribution of the thickness of the workpiece disposed in the gas, and a laser beam irradiation step of irradiating the workpiece in the gas with a laser beam of which the power is adjusted based on the distribution of the thickness measured in the measurement step. In the laser beam irradiation step, the removal amount by which a region irradiated with the laser beam in the workpiece is removed by the active species is controlled by irradiating the workpiece with the laser beam of which the power is adjusted.

A processing method of a workpiece used when the workpiece is processed is provided. The processing method of a workpiece includes a disposing step of disposing the workpiece in a gas containing a substance that generates an active species that reacts with the workpiece, a measurement step of measuring the distribution of the thickness of the workpiece disposed in the gas, and a laser beam irradiation step of irradiating the workpiece in the gas with a laser beam of which the power is adjusted based on the distribution of the thickness measured in the measurement step. In the laser beam irradiation step, the removal amount by which a region irradiated with the laser beam in the workpiece is removed by the active species is controlled by irradiating the workpiece with the laser beam of which the power is adjusted.

A substrate processing method of processing a combined substrate in which a first substrate and a second substrate are bonded to each other includes forming a peripheral modification layer along a boundary between a peripheral portion of the first substrate as a removing target and a central portion of the first substrate; forming a non-bonding region in which bonding strength between the first substrate and the second substrate in the peripheral portion is reduced; and removing the peripheral portion starting from the peripheral modification layer. A first crack is developed from the peripheral modification layer toward the second substrate. The peripheral modification layer is formed such that a lower end of the first crack is located above the non-bonding region and an inner end of the non-bonding region is located at a diametrically outer side than the first crack.

A substrate processing method of processing a combined substrate in which a first substrate and a second substrate are bonded to each other includes forming a peripheral modification layer along a boundary between a peripheral portion of the first substrate as a removing target and a central portion of the first substrate; forming a non-bonding region in which bonding strength between the first substrate and the second substrate in the peripheral portion is reduced; and removing the peripheral portion starting from the peripheral modification layer. A first crack is developed from the peripheral modification layer toward the second substrate. The peripheral modification layer is formed such that a lower end of the first crack is located above the non-bonding region and an inner end of the non-bonding region is located at a diametrically outer side than the first crack.

A substrate processing method of grinding a first substrate in a combined substrate in which the first substrate and a second substrate are bonded to each other includes measuring a total thickness distribution of the combined substrate; measuring a thickness distribution of the first substrate; calculating a thickness distribution of the second substrate by subtracting the thickness distribution of the first substrate from the total thickness distribution of the combined substrate; deciding a relative inclination between a substrate holder configured to hold the combined substrate and a grinder configured to grind the combined substrate, based on the thickness distribution of the second substrate; and grinding the first substrate while holding the combined substrate at the inclination which is decided.

A substrate processing method includes measuring a first thickness distribution of a first substrate in a first one of multiple combined substrates before being subjected to a finishing grinding; measuring a second thickness distribution of the first substrate in a second one of the multiple combined substrates before being subjected to the finishing grinding; deciding a relative inclination between a substrate holder configured to hold the second one of the multiple combined substrates and a grinder configured to perform the finishing grinding on the corresponding combined substrate, based on first difference data between the first thickness distribution and the second thickness distribution; and performing finishing grinding on the first substrate in the second one of the multiple combined substrates while holding the second one of the multiple combined substrates at the inclination which is decided.

A substrate processing method includes measuring a first thickness distribution of a first substrate in a first one of multiple combined substrates before being subjected to a finishing grinding; measuring a second thickness distribution of the first substrate in a second one of the multiple combined substrates before being subjected to the finishing grinding; deciding a relative inclination between a substrate holder configured to hold the second one of the multiple combined substrates and a grinder configured to perform the finishing grinding on the corresponding combined substrate, based on first difference data between the first thickness distribution and the second thickness distribution; and performing finishing grinding on the first substrate in the second one of the multiple combined substrates while holding the second one of the multiple combined substrates at the inclination which is decided.

There is provided a cleaning liquid excellent in cleaning performance and corrosion prevention performance in application as a cleaning liquid for semiconductor substrates that contain cobalt-containing matter and that have undergone a chemical mechanical polishing process. There is also provided a method of cleaning a semiconductor substrate having undergone a chemical mechanical polishing process. The cleaning liquid is for a semiconductor substrate having undergone a chemical mechanical polishing process, and contains an amine compound Y0 that is at least one selected from the group consisting of: a compound Y1 represented by a general formula (Y1); and a compound Y0 having a 1,4-butanediamine skeleton. The cleaning liquid has a pH of 8.0 to 11.0.

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A cleaning device includes: a plurality of rollers that hold a peripheral edge part of a substrate; a rotation driving unit that rotates the substrate by rotationally driving the plurality of rollers; a cleaning member that abuts on the substrate and cleans the substrate; a cleaning liquid supply nozzle that supplies a cleaning liquid to the substrate; a microphone that detects a sound generated when a notch of the peripheral edge part of the substrate hits the plurality of rollers; and a rotation speed calculation unit that calculates a rotation speed of the substrate on the basis of the sound detected by the microphone.

A semiconductor wafer processing method, having: ablating a back side of a semiconductor wafer with a laser ablation process; and etching the back side of the semiconductor wafer with an etching process; wherein the laser ablation process forms a pattern in the back side of the semiconductor wafer; wherein the etching process preserves the pattern in the back side of the semiconductor wafer.