Provided are a chemical mechanical polishing composition and a chemical mechanical polishing method that can polish a semiconductor substrate containing an electric conductor metal, such as tungsten or cobalt, flat and at high speed, and reduce post-polishing surface defects. The chemical mechanical polishing composition contains (A) silica particles having the functional group represented by general formula (1), and (B) at least one selected from the group consisting of a carboxylic acid having an unsaturated bond and a salt thereof. (1): —COO-M+ (M+ represents a monovalent cation.)

A holding mechanism holds a substrate horizontally. A rotation mechanism rotates the holding mechanism holding the substrate. A nozzle supplies a processing liquid to the substrate. A nozzle arm holds the nozzle. An arm actuation mechanism moves the nozzle arm between a processing position overlapping the substrate in plan view and a retracted position displaced from the substrate in plan view. A cup portion is disposed around the holding mechanism, and receives the processing liquid from the substrate. A cup actuation mechanism moves the cup portion up and down between an upper position and a lower position. A first container is fixed to the cup portion to be movable up and down integrally with the cup portion, and can accommodate the nozzle at the retracted position.

A wafer processing method includes the steps of forming a bonded wafer by bonding one surface of a first wafer which is chambered at an outer peripheral edge and includes a device region and an outer peripheral surplus region, to a second wafer, irradiating a laser beam along the outer peripheral edge of the first wafer and forming an annular modified region, thereby segmenting the first wafer into an outer peripheral annular portion and a central region, bonding an expand tape to the other surface of the first wafer, expanding the expand tape, thereby splitting the first wafer into the outer peripheral annular portion and the central region from the annular modified region as a starting point and breaking off the outer peripheral annular portion from the bonded wafer, and grinding the first wafer from the other surface to a finish thickness.

A wafer processing method includes the steps of forming a bonded wafer by bonding one surface of a first wafer which is chambered at an outer peripheral edge and includes a device region and an outer peripheral surplus region, to a second wafer, irradiating a laser beam along the outer peripheral edge of the first wafer and forming an annular modified region, thereby segmenting the first wafer into an outer peripheral annular portion and a central region, bonding an expand tape to the other surface of the first wafer, expanding the expand tape, thereby splitting the first wafer into the outer peripheral annular portion and the central region from the annular modified region as a starting point and breaking off the outer peripheral annular portion from the bonded wafer, and grinding the first wafer from the other surface to a finish thickness.

A method of manufacturing a semiconductor chip includes preparing a semiconductor substrate having an active surface on which a device layer is provided and an inactive surface opposite to the active surface, the device layer having a integrated circuit (IC) areas and a cut area provided between adjacent IC areas; forming anti-collision recesses in regions of the cut area that are adjacent to corners of the IC areas, each of the anti-collision recesses having rounded internal sidewalls, each of the rounded internal sidewalls corresponding to a respective corner of the adjacent corners; forming a modified portion in the semiconductor substrate by irradiating a cut line of the cut area with a laser; polishing the inactive surface of the semiconductor substrate, wherein cracks propagate from the modified portion in a vertical direction of the semiconductor substrate; and separating the IC areas from each other along the cracks to form semiconductor chips.

The present application discloses a method for fabricating a semiconductor device with liners. The method includes providing a substrate having a first surface and a second surface opposite to the first surface, inwardly forming a trench on the first surface of the substrate, forming a plurality of liners positioned on side surfaces of the trench, forming a first insulating segment filling the trench, and removing part of the substrate from the second surface to expose the first insulating segment and the plurality of liners.

The present application discloses a method for fabricating a semiconductor device with liners. The method includes providing a substrate having a first surface and a second surface opposite to the first surface, inwardly forming a trench on the first surface of the substrate, forming a plurality of liners positioned on side surfaces of the trench, forming a first insulating segment filling the trench, and removing part of the substrate from the second surface to expose the first insulating segment and the plurality of liners.

A method for polishing a semiconductor substrate includes the following operations. A semiconductor substrate is received. An abrasive slurry having a first temperature is dispensed to a polishing surface of a polishing pad. The semiconductor substrate is polished. The abrasive slurry have a second temperature is dispensed to the polishing surface of the polishing pad during the polishing of the semiconductor substrate. The second temperature is different from the first temperature.

A method for polishing a semiconductor substrate includes the following operations. A semiconductor substrate is received. An abrasive slurry having a first temperature is dispensed to a polishing surface of a polishing pad. The semiconductor substrate is polished. The abrasive slurry have a second temperature is dispensed to the polishing surface of the polishing pad during the polishing of the semiconductor substrate. The second temperature is different from the first temperature.

Provided is a method for producing a decomposing/cleaning composition which improves etching speed retention. A method for producing a decomposing/cleaning composition which contains (A) an N-substituted amide compound in which a hydrogen atom is not directly bonded to a nitrogen atom and (B) a quaternary alkyl ammonium fluoride or a hydrate thereof, said method having a preparation step for mixing the (A) and (B) components in an inert gas atmosphere.