A method of processing a wafer having a plurality of devices formed in respective areas on a face side of the wafer, the areas being demarcated by a plurality of intersecting projected dicing lines, includes a low-viscosity resin applying step of coating the face side of the wafer with a first liquid resin of low viscosity to cover an area of the wafer where the plurality of devices are present, a high-viscosity resin applying step of, after the low-viscosity resin applying step, coating the face side of the wafer with a second liquid resin of higher viscosity than the first liquid resin in overlapping relation to the first liquid resin, a resin curing step of curing the first liquid resin and the second liquid resin that have coated the face side of the wafer into a protective film, and a planarizing step of planarizing the protective film.

A method of processing a wafer having a plurality of devices formed in respective areas on a face side of the wafer, the areas being demarcated by a plurality of intersecting projected dicing lines, includes a low-viscosity resin applying step of coating the face side of the wafer with a first liquid resin of low viscosity to cover an area of the wafer where the plurality of devices are present, a high-viscosity resin applying step of, after the low-viscosity resin applying step, coating the face side of the wafer with a second liquid resin of higher viscosity than the first liquid resin in overlapping relation to the first liquid resin, a resin curing step of curing the first liquid resin and the second liquid resin that have coated the face side of the wafer into a protective film, and a planarizing step of planarizing the protective film.

A method of processing a wafer having a plurality of devices formed in respective areas on a face side of the wafer, the areas being demarcated by a plurality of intersecting projected dicing lines, includes a resin applying step of coating the face side of the wafer with a liquid resin to cover an area of the wafer where the plurality of devices are present, a resin curing step of curing the liquid resin into a protective film, a protective tape laying step of laying a protective tape on an upper surface of the protective film, and a planarizing step of planarizing a face side of the protective tape.

A method of processing a wafer having a plurality of devices formed in respective areas on a face side of the wafer, the areas being demarcated by a plurality of intersecting projected dicing lines, includes a resin applying step of coating the face side of the wafer with a liquid resin to cover an area of the wafer where the plurality of devices are present, a resin curing step of curing the liquid resin into a protective film, a protective tape laying step of laying a protective tape on an upper surface of the protective film, and a planarizing step of planarizing a face side of the protective tape.

In a semiconductor device in a wafer state, an element region and a scribe region are defined in one main surface of a semiconductor substrate. In the element region, a vertical MOS transistor is formed as a semiconductor element. In the scribe region, an n-type column region and a p-type column region are defined. An n-type column resistor is formed in the n-type column region. A p-type column resistor is formed in the p-type column region.

In a semiconductor device in a wafer state, an element region and a scribe region are defined in one main surface of a semiconductor substrate. In the element region, a vertical MOS transistor is formed as a semiconductor element. In the scribe region, an n-type column region and a p-type column region are defined. An n-type column resistor is formed in the n-type column region. A p-type column resistor is formed in the p-type column region.

A sheet for processing a wafer, including a substrate sheet that comes into contact with a main surface of the wafer, wherein the substrate sheet has an exponential coefficient in an exponential trendline for storage modulus E′.sub.30-80 at 30° C. to 80° C. of −0.035 to −0.070.

A sheet for processing a wafer, including a substrate sheet that comes into contact with a main surface of the wafer, wherein the substrate sheet has an exponential coefficient in an exponential trendline for storage modulus E′.sub.30-80 at 30° C. to 80° C. of −0.035 to −0.070.

The present invention relates to a substrate processing apparatus for processing a substrate. The substrate processing apparatus (1) includes a controller (90). The controller (90) rotates the substrate (W) at a second speed, after rotating the substrate (W) at a first speed. The controller (90) supplies a dry fluid from a dry fluid nozzle (30) onto the substrate (W) for predetermined time after rotating the substrate (W) at the second speed, and while rotating the substrate (W) at a third speed. The controller (90) moves a dry fluid nozzle (30) from a center of the substrate (W) toward a peripheral portion of the substrate (W) while continuing to supply the dry fluid from the dry fluid nozzle (30).

An object of the present invention is to provide a chemical liquid supply method capable of reducing the content of impurities in a chemical liquid. Another object of the present invention is to provide a pattern forming method.

The chemical liquid supply method according to an embodiment of the present invention is a chemical liquid supply method of supplying a chemical liquid containing an organic solvent through a pipe line that an apparatus for semiconductor devices comprises, the chemical liquid supply method having a gas pumping step of sending the chemical liquid by pressurization using a gas, in which a moisture content in the gas is 0.00001 to 1 ppm by mass with respect to a total mass of the gas.