Patent classifications
H
ELECTRICITY
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H01
ELECTRIC ELEMENTS
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H01L
SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
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21/00
Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
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H01L21/02
Manufacture or treatment of semiconductor devices or of parts thereof
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H01L21/04
the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
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H01L21/18
the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
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H01L21/30
Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
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H01L21/324
Thermal treatment for modifying the properties of semiconductor bodies, e.g. annealing, sintering
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H01L21/3242
for the formation of PN junctions without addition of impurities
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H01L21/3242

Method of manufacturing semiconductor devices using light ion implantation and semiconductor device
09634086 · 2017-04-25 · ·

A first doped region is formed in a single crystalline semiconductor substrate. Light ions are implanted through a process surface into the semiconductor substrate to generate crystal lattice vacancies between the first doped region and the process surface, wherein a main beam axis of an implant beam used for implanting the light ions deviates by at most 1.5 degree from a main crystal direction along which channeling of the light ions occurs. A second doped region with a conductivity type opposite to the first doped region is formed based on the crystal lattice vacancies and hydrogen atoms.

Method for producing a semiconductor
09627209 · 2017-04-18 · ·

A method for producing a semiconductor is disclosed, the method having: providing a semiconductor body having a first side and a second side; forming an n-doped zone in the semiconductor body by a first implantation into the semiconductor body via the first side to a first depth location of the semiconductor body; and forming a p-doped zone in the semiconductor body by a second implantation into the semiconductor body via the second side to a second depth location of the semiconductor body, a pn-junction forming between said n-doped zone and said p-doped zone in the semiconductor body.

Semiconductor device with a semiconductor body containing hydrogen-related donors
09564495 · 2017-02-07 · ·

A semiconductor device includes a semiconductor body with parallel first and second surfaces and containing hydrogen-related donors. A concentration profile of the hydrogen-related donors vertical to the first surface includes a maximum value of at least 1E15 cm.sup.3 at a first distance to the first surface and does not fall below 1E14 cm.sup.3 over at least 60% of an interval between the first surface and the first distance.

Increasing the doping efficiency during proton irradiation
09536740 · 2017-01-03 · ·

A description is given of a method for doping a semiconductor body, and a semiconductor body produced by such a method. The method comprises irradiating the semiconductor body with protons and irradiating the semiconductor body with electrons. After the process of irradiating with protons and after the process of irradiating with electrons, the semiconductor body is subjected to heat treatment in order to attach the protons to vacancies by means of diffusion.