Methods of forming a semiconductor device comprising a lead-frame having a die pad having at least one electrically conductive die pad area and an insulating layer applied onto the electrically conductive die pad area. An electrically conductive layer is applied onto the insulating layer with one or more semiconductor dice coupled, for instance adhesively, to the electrically conductive layer. The electrically conductive die pad area, the electrically conductive layer and the insulating layer sandwiched therebetween form at least one capacitor integrated in the device. The electrically conductive die pad area comprises a sculptured structure with valleys and peaks therein; the electrically conductive layer comprises electrically conductive filling material extending into the valleys in the sculptured structure of the electrically conductive die pad area.

Embodiments of the present disclosure are directed to leadframe semiconductor packages having die pads with cooling fins. In at least one embodiment, the leadframe semiconductor package includes leads and a semiconductor die (or chip) coupled to a die pad with cooling fins. The cooling fins are defined by recesses formed in the die pad. The recesses extend into the die pad at a bottom surface of the semiconductor package, such that the bottom surfaces of the cooling fins of the die pad are flush or coplanar with a surface of the package body, such as an encapsulation material. Furthermore, bottom surfaces of the cooling fins of the die pad are flush or coplanar with exposed bottom surfaces of the leads.

An embodiment method includes: forming a gate stack over a channel region; growing a source/drain region adjacent the channel region; depositing a first ILD layer over the source/drain region and the gate stack; forming a source/drain contact through the first ILD layer to physically contact the source/drain region; forming a gate contact through the first ILD layer to physically contact the gate stack; performing an etching process to partially expose a first sidewall and a second sidewall, the first sidewall being at a first interface of the source/drain contact and the first ILD layer, the second sidewall being at a second interface of the gate contact and the first ILD layer; forming a first conductive feature physically contacting the first sidewall and a first top surface of the source/drain contact; and forming a second conductive feature physically contacting the second sidewall and a second top surface of the gate contact.

A method of forming a semiconductor structure includes forming an etch stop layer on a substrate, forming a metal oxide layer over the etch stop layer, and forming an interlayer dielectric (ILD) layer on the metal oxide layer. The method further includes forming a trench etch opening over the ILD layer, forming a capping layer over the trench etch opening, and forming a via etch opening over the capping layer.

A light fixture has a translucent tubular bulb. At least one end cap is located at one end of the translucent tubular bulb. A light engine is disposed in the translucent tubular bulb. The light engine has a leadframe on which a plurality of semiconductor light elements is arranged. The fixture may include an electronic driver. The electronic driver includes a plurality of electronic components. At least one of the plurality of electronic components is arranged inside the transparent tubular bulb.

Implementations of the semiconductor package may include a first sidewall opposite a second sidewall, and a third sidewall opposite a fourth sidewall. Implementations of the semiconductor package may include a first lead and a second lead extending from the first sidewall and a first half-etched tie bar directly coupled to the first lead. An end of the first half-etched tie bar may be exposed on the third sidewall of the semiconductor package. Implementations of the semiconductor package may also include a second half-etched tie bar directly coupled to the second lead. An end of the second half-etched tie bar may be exposed on the fourth sidewall. An end of the first lead and an end of the second lead may each be electroplated. The first die flag and the second die flag may be electrically isolated from the first lead and the second lead.

In some examples, a semiconductor package comprises a die pad, a semiconductor die on the die pad, and a mold compound covering the die pad and the semiconductor die. The semiconductor package includes a conductive component including a roughened surface, the roughened surface having a roughness ranging from an arithmetic mean surface height (SA) of 1.4 to 3.2. The mold compound is coupled to the roughened surface. The semiconductor package includes a bond wire coupling the semiconductor die to the roughened surface. The bond wire is directly coupled to the roughened surface without a precious metal positioned therebetween.

A lead frame includes a first area, situated on a first surface of the lead frame, for mounting a semiconductor chip, and a second area, situated on the first surface of the lead frame, around the first area, wherein the second area includes a roughened area and a less-rough area situated between the roughened area and the first area, the less-rough area having a higher flatness than the roughened area.

A semiconductor chip is mounted at a first surface of a leadframe and an insulating encapsulation is formed onto the leadframe. An etching mask is applied to a second surface of the leadframe to cover locations of two adjacent rows of electrical contacts as well as a connecting bar between the two adjacent rows which electrically couples the electrical contacts. The second surface is then etched through the etching mask to remove leadframe material at the second surface and define the electrical contacts and connecting bar. The electrical contacts include a distal surface as well as flanks left uncovered by the insulating encapsulation. The etching mask is then removed and the electrical contacts and the connecting bars are used as electrodes in an electroplating of the distal surface and the flanks of the electrical contacts. The connecting bar is then removed from between the two adjacent rows during device singulation.

A semiconductor device includes several first cell rows extending in a first direction, each of the first cell rows having a first row height; several second cell rows extending in the first direction, each of the second cell rows having a second row height smaller than the first row height, wherein the first cell rows and the second cell rows are interlaced; a first cell arranged in a first row of the first cell rows; and at least one second cell arranged in at least one row of the second cell rows, wherein the at least one second cell abuts the first cell in a second direction different from the first direction, wherein the at least one second cell and at least one circuit component included in the first cell have the same operation configuration.