A method of manufacturing a power amplifier package embedded with an input-output circuit including a dielectric circuit board, a heat sink and lead frames, the method comprising: the step of preparing the dielectric circuit board including the steps of forming a power amplifier hole in which a power amplifier chip is to be disposed on a dielectric substrate, printing an input matching network metal pattern on a left side of the power amplifier hole, and printing an output matching network metal pattern on a right side of the power amplifier hole, and sintering the input matching network metal pattern and the output matching network metal pattern printed on the dielectric substrate; the step of preparing the lead frames by etching alloy 42 and plating nickel; and the step of attaching the heat sink on a bottom surface of the dielectric circuit board.

A power module package is provided, including a substrate, a first chip, and a second chip. The substrate includes a metal carrier, a patterned insulation layer disposed on the metal carrier and partially covering the metal carrier, and a patterned conductive layer disposed on the patterned insulation layer. The first chip is disposed on the metal carrier not covered by the patterned insulation layer. The second chip is disposed on the patterned conductive layer and electrically connected to the first chip.

A power module package is provided, including a substrate, a first chip, and a second chip. The substrate includes a metal carrier, a patterned insulation layer disposed on the metal carrier and partially covering the metal carrier, and a patterned conductive layer disposed on the patterned insulation layer. The first chip is disposed on the metal carrier not covered by the patterned insulation layer. The second chip is disposed on the patterned conductive layer and electrically connected to the first chip.

The leadframe substrate includes an isolator incorporated with metal leads by a compound layer. The metal leads are disposed about sidewalls of the isolator and provide horizontal and vertical routing for a semiconductor device to be assembled on the isolator. The compound layer covers the sidewalls of the isolator and fills in spaces between the metal leads, and provides robust mechanical bonds between the metal leads and the isolator.

An integrated circuit package may include a first conductive pad on an interposer substrate, and a second conductive pad formed on a front surface of an integrated circuit die. The second conductive pad may directly contact the first conductive pad on the interposer substrate. The integrated circuit package may further include a package substrate having a cavity, in which the interposer substrate and the integrated circuit are disposed in the cavity. The interposer substrate may include interconnect pathways that are electrically coupled to the first and second conductive pads. A heat spreader may subsequently form over the integrated circuit die and the package substrate.

A method of fabricating a BGA carrier, the method comprising combining a conductive portion and a molded dielectric portion, the dielectric portion having a top surface, a bottom surface and an inner surface, the inner surface intersecting said top surface and said bottom surface, the inner surface forming a cavity for receiving a semiconductor die; selectively bonding the semiconductor die to a top surface of the conductive portion; selectively etching part of the conductive portion; and applying solder resist to a bottom surface of the conductive portion.

Techniques and devices are disclosed for forming wettable flanks on no-leads semiconductor packages. A lead frame may include a plurality of lead sets, each lead set including leads having a die surface and a plating surface, vias between adjacent lead sets in a first direction, and an integrated circuit die arranged on the die surface of each die lead. A mold chase may be applied to the plating surfaces, the mold chase including mold chase extensions extending into the vias between each adjacent lead set in the first direction, each mold chase extension having a peak surface. The lead frame assembly may be partially embedded in a mold encapsulation such that portions of the mold encapsulation contact the peak surfaces. The mold chase may be removed to expose the vias containing sidewalls and the plating surfaces and the sidewalls may be plated with an electrical plating.

In some examples, a semiconductor package comprises a lead frame. The lead frame includes a first row of leads; a first pad coupled to the first row of leads; a second row of leads; and a second pad coupled to the second row of leads, the first and second pads separated by a gap. The semiconductor package includes a heat-generating device coupled to the first and second pads and exposed to an exterior of the semiconductor package.

Multi-die integrated circuit packages and methods of manufacturing the same are disclosed. An example integrated circuit package includes a first leadframe, a first die on a first side of the first leadframe, and a second die on a second side of the first leadframe opposite the first side. The example integrated circuit package further includes external second leadframe separate from the first leadframe.

Provided are a method for fabricating a semiconductor package and a semiconductor package using the same, which can simplify a fabricating process of the semiconductor package by forming a lead frame on which a semiconductor die can be mounted without a separate grinding process, and can improve product reliability by preventing warpage from occurring during a grinding process. In one embodiment, the method for fabricating a semiconductor package includes forming a frame on a carrier, forming a first pattern layer on the frame, first encapsulating the frame and the first pattern layer using a first encapsulant, forming conductive vias electrically connected to the first pattern layer while passing through the first encapsulant, forming a second pattern layer electrically connected to the conductive vias on the first encapsulant, forming a first solder mask formed on the first encapsulant and exposing a portion of the second pattern layer to the outside, removing the frame by an etching process and etching a portion of the first pattern layer, and attaching a semiconductor die to the first pattern layer.