Patent classifications
H01L21/4867
PRINTING OF THREE-DIMENSIONAL METAL STRUCTURES WITH A SACRIFICIAL SUPPORT
A method for 3D printing includes printing a first metallic material on a substrate as a support structure (48). A second metallic material, which is less anodic than the first metallic material, is printed on the substrate as a target structure (46), in contact with the support structure. The support structure is chemically removed from the target structure by applying a galvanic effect to selectively corrode the first metallic material.
SEMICONDUCTOR PACKAGE WITH FLIP CHIP SOLDER JOINT CAPSULES
A semiconductor package includes a leadframe forming a plurality of leads with a die attach site, a semiconductor die including a set of die contacts mounted to the die attach site in a flip chip configuration with each die contact of the set of die contacts electrically connected to leadframe via one of a set of solder joints, a set of solder joint capsules covering each of the set of solder joints against the leadframe, a clip mounted to the leadframe over the semiconductor die with a clip solder joint. The solder joint capsules restrict flow of the solder joints of the semiconductor die contacts in the flip chip configuration such that the solder remains in place if remelted during later clip solder reflow.
Semiconductor device packages
A semiconductor device package that incorporates a combination of ceramic, organic, and metallic materials that are coupled using silver is provided. The silver is applied in the form of fine particles under pressure and a low temperature. After application, the silver forms a solid that has a typical melting point of silver, and therefore the finished package can withstand temperatures significantly higher than the manufacturing temperature. Further, since the silver is an interfacial material between the various combined materials, the effect of differing material properties between ceramic, organic, and metallic components, such as coefficient of thermal expansion, is reduced due to low temperature of bonding and the ductility of the silver.
SUBSTRATE ASSEMBLY WITH ENCAPSULATED MAGNETIC FEATURE
Apparatuses, systems and methods associated with a substrate assembly with an encapsulated magnetic feature for an inductor are disclosed herein. In embodiments, a substrate assembly may include a base substrate, a magnetic feature encapsulated within the base substrate, and a coil, wherein a portion of the coil extends through the magnetic feature. Other embodiments may be described and/or claimed.
Semiconductor package with multiple molding routing layers and a method of manufacturing the same
Embodiments of the present invention are directed to a method of manufacturing a semiconductor package with an internal routing circuit. The internal routing circuit is formed from multiple molding routing layers in a plated and etched copper terminal semiconductor package by using an inkjet process to create conductive paths on each molding compound layer of the semiconductor package.
METHOD FOR FORMING FUNCTIONAL PART IN MINUTE SPACE
A method for forming a functional part in a minute space includes the steps of: filling a minute space with a dispersion functional material in which a thermally-meltable functional powder is dispersed in a liquid dispersion medium; evaporating the liquid dispersion medium present in the minute space; and heating the functional powder and hardening it under pressure.
METHOD OF MANUFACTURING SEMICONDUCTOR DEVICES AND CORRESPONDING DEVICE
At least one semiconductor chip or die is held within at a chip retaining formation provided in a chip holding device. The chip holding device is then positioned with the at least one semiconductor chip or die arranged facing a chip attachment location in a chip mounting substrate. This positioning produces a cavity between the at least one semiconductor chip or die arranged at the chip retaining formation and the chip attachment location in the chip mounting substrate. A chip attachment material is dispensed into the cavity. Once cured, the chip attachment material attaches the at least one semiconductor chip or die onto the substrate at the chip attachment location in the chip mounting substrate.
Methods for Forming Ceramic Substrates with Via Studs
This document describes the fabrication and use of multilayer ceramic substrates, having one or more levels of internal thick film metal conductor patterns, wherein any or all of the metal vias intersecting one or both of the major surface planes of the substrates, extend out of the surface to be used for making flexible, temporary or permanent interconnections, to terminals of an electronic component. Such structures are useful for wafer probing, and for packaging, of the semiconductor devices.
METHOD OF ATTACHING COMPONENTS TO PRINTED CIRUCUIT BOARD WITH REDUCED ACCUMULATED TOLERANCES
A method is provided for attaching components to pads on a PCB, where total accumulated tolerances are reduced by separating accumulated tolerances into multiple processes. The method includes performing first and second processes having first and second accumulated tolerances, respectively. The first process includes placing a first stencil over the PCB, the first stencil defining first apertures corresponding to the pads; printing solder paste onto the pads using the first stencil; and reflowing the printed solder paste to form corresponding solder bumps on the pads. The second process includes placing a second stencil over the PCB, the second stencil defining second apertures corresponding to the pads; printing flux onto the solder bumps using the second stencil; placing at least one component on the printed flux; and reflowing the printed flux and the solder bumps to form corresponding solder joints between the at least one component and the first pads, respectively.
POWER MODULE SUBSTRATE WITH Ag UNDERLAYER AND POWER MODULE
A power module substrate with a Ag underlayer of the invention includes: a circuit layer that is formed on one surface of an insulating layer; and a Ag underlayer that is formed on the circuit layer, in which the Ag underlayer is composed of a glass layer that is formed on the circuit layer side and a Ag layer that is formed by lamination on the glass layer, and regarding the Ag underlayer, in a Raman spectrum obtained by a Raman spectroscopy with incident light made incident from a surface of the Ag layer on a side opposite to the glass layer, when a maximum value of intensity in a wavenumber range of 3,000 cm.sup.−1 to 4,000 cm.sup.−1 indicated by I.sub.A, and a maximum value of intensity in a wavenumber range of 450 cm.sup.−1 to 550 cm.sup.−1 is indicated by I.sub.B, I.sub.A/I.sub.B is 1.1 or greater.