To provide a film capable of suppressing both of formation of wrinkles when a release film is suction-attached to a cavity surface in compression molding, and formation of wrinkles when the cavity bottom surface to which the release film has been suction-attached is raised; and a method for producing a semiconductor element by using said film. A laminated film 1 comprises a layer 3 of shrinkable film, of which the storage elastic modulus E′ at 180° C. is at least 70 MPa, and the thermal shrinkage in 30 minutes at 180° C., with reference to 20° C., in each of the machine direction (MD) and the transverse direction (TD), is at least 3%, and a fluororesin layer 5 present on one side or both sides of the shrinkable film layer 3.

A semiconductor package device includes a wiring structure, a semiconductor chip and an encapsulant. The semiconductor chip is electrically connected to the wiring structure. The encapsulant is disposed on the wiring structure and covers the semiconductor chip. A roughness (Ra) of a surface of the encapsulant is about 5 nm to about 50 nm.

Microelectronic devices and method of forming a plurality of microelectronic devices on a semiconductor workpiece are disclosed herein. One such method includes placing a plurality of first interconnect elements on a side of a semiconductor workpiece, forming a layer on the side of the workpiece, reshaping the first interconnect elements by heating the first interconnect elements, and coupling a first portion of a plurality of individual second interconnect elements to corresponding first interconnect elements with a second portion of the individual second interconnect elements exposed.

A surface mount electronic device providing an electrical connection between an integrated circuit (IC) and a printed circuit board (PCB) is provided and includes a die and a dielectric material formed to cover portions of the die. Pillar contacts are electrically coupled to electronic components in the die and the pillar contacts extend from the die beyond an outer surface of the die. A conductive ink is printed on portions of a contact surface of the electronic device package and forms electrical terminations on portions of the dielectric material and electrical connector elements that connect an exposed end surface of the pillar contacts to the electrical terminations.

A package includes a first die, a second die, a bridge structure, a first redistribution structure, and an encapsulant. The first die and the second die are disposed side by side. The bridge structure is disposed over the first die and the second die. The bridge structure includes a plurality of routing patterns and a plurality of connectors disposed on the plurality of routing patterns. The first redistribution structure is sandwiched between the first die and the bridge structure and is sandwiched between the second die and the bridge structure. The plurality of connectors of the bridge structure is in physical contact with the first redistribution structure. The encapsulant encapsulates the bridge structure. The plurality of routing patterns and the plurality of connectors of the bridge structure are completely spaced apart from the encapsulant.

A method of manufacturing a semiconductor structure includes following operations. A first die is provided. A first molding is formed to encapsulate the first die. A second die is disposed over the first molding. A mold chase is disposed over the second die and the first molding. The mold chase includes a protrusion protruded from the mold chase towards the first molding. A molding material is disposed between the mold chase and the first molding. A second molding is formed to surround the second die. The second die is at least partially covered by the second molding. The disposing of the mold chase includes surrounding the protrusion of the mold chase by the molding material.

A manufacturing method for semiconductor packages is provided. Chips are provided on a carrier. Through interlayer vias are formed over the carrier to surround the chips. A molding compound is formed over the carrier to partially and laterally encapsulate the chip and the through interlayer vias. The molding compound comprises pits on a top surface thereof. A polymeric molding compound is formed on the molding compound to fill the pits of the molding compound.

A heat-resistant release sheet of the present disclosure is a sheet formed of a single-layer heat-resistant resin film having a thickness of 35 pm or less, wherein the sheet is disposed between a compression bonding target and a thermocompression head at the time of thermocompression-bonding the compression bonding target by the thermocompression head to prevent fixation between the compression bonding target and the thermocompression head, and a heat-resistant resin forming the heat-resistant resin film has a melting point of 310° C. or higher and/or a glass transition temperature of 210° C. or higher. A use temperature of this heat-resistant release sheet can be, for example, 250° C. or higher. The heat-resistant release sheet of the present disclosure can more reliably meet a demand for an increase in thermocompression bonding temperature.

Wafer-level methods for manufacturing one or more uniform layers of material on one or more surfaces of a plurality of optoelectronic modules include assembling a wafer assembly, injecting a formable material into the wafer assembly, ejecting excess formable material form the wafer assembly, and hardening one or more formable material layers on one or more surfaces of the plurality of optoelectronic modules such that the hardened one or more formable material layers are the one or more uniform layers of material.

Microelectronic devices and method of forming a plurality of microelectronic devices on a semiconductor workpiece are disclosed herein. One such method includes placing a plurality of first interconnect elements on a side of a semiconductor workpiece, forming a layer on the side of the workpiece, reshaping the first interconnect elements by heating the first interconnect elements, and coupling a first portion of a plurality of individual second interconnect elements to corresponding first interconnect elements with a second portion of the individual second interconnect elements exposed.