Microelectronic systems having embedded heat dissipation structures are disclosed, as are methods for fabricating such microelectronic systems. In various embodiments, the method includes the steps or processes of obtaining a substrate having a tunnel formed therethrough, attaching a microelectronic component to a frontside of the substrate at a location covering the tunnel, and producing an embedded heat dissipation structure at least partially within the tunnel after attaching the microelectronic component to the substrate. The step of producing may include application of a bond layer precursor material into the tunnel and onto the microelectronic component from a backside of the substrate. The bond layer precursor material may then be subjected to sintering process or otherwise cured to form a thermally-conductive component bond layer in contact with the microelectronic component.

A process for manufacturing surface-mount semiconductor devices, in particular of the Quad-Flat No-Leads Multi-Row type, comprising providing a metal leadframe, in particular a copper leadframe, which includes a plurality of pads, each of which is designed to receive the body of the device, the pads being separated from adjacent pads by one or more rows of wire-bonding contacting areas, outermost rows from among the one or more rows of wire-bonding contacting areas identifying, together with outermost rows corresponding to the adjacent pads, separation regions.

A semiconductor assembly includes a semiconductor die comprising lower and upper electrical contacts. A lead frame having a lower die pad is electrically and mechanically connected to the lower electrical contact of the die. An upper conductive member has a first portion electrically and mechanically connected to the upper electrical contact of the die. A lead terminal has a surface portion electrically and mechanically connected to a second portion of the conductive member. The surface portion of the lead terminal and/or the second portion of the conductive member has a series of grooves disposed therein. Packaging material encapsulates the semiconductor die, at least a portion of the lead frame, at least a portion of the upper conducive member and at least a portion of the lead terminal.

A method includes forming a first package component and a second package component. The first package component includes a first polymer layer, and a first electrical connector, with at least a part of the first electrical connector being in the first polymer layer. The second package component comprises a second polymer layer, and a second electrical connector, with at least a part of the second electrical connector being in the second polymer layer. The first package component is bonded to the second package component, with the first polymer layer being bonded to the second polymer layer, and the first electrical connector being bonded to the second electrical connector.

Microelectronic systems having embedded heat dissipation structures are disclosed, as are methods for fabricating such microelectronic systems. In various embodiments, the method includes the steps or processes of obtaining a substrate having a tunnel formed therethrough, attaching a microelectronic component to a frontside of the substrate at a location covering the tunnel, and producing an embedded heat dissipation structure at least partially within the tunnel after attaching the microelectronic component to the substrate. The step of producing may include application of a bond layer precursor material into the tunnel and onto the microelectronic component from a backside of the substrate. The bond layer precursor material may then be subjected to sintering process or otherwise cured to form a thermally-conductive component bond layer in contact with the microelectronic component.

A process for manufacturing surface-mount semiconductor devices, in particular of the Quad-Flat No-Leads Multi-Row type, comprising providing a metal leadframe, in particular a copper leadframe, which includes a plurality of pads, each of which is designed to receive the body of the device, the pads being separated from adjacent pads by one or more rows of wire-bonding contacting areas, outermost rows from among the one or more rows of wire-bonding contacting areas identifying, together with outermost rows corresponding to the adjacent pads, separation regions.

An electronic device structure includes a substrate having a substrate first major surface, an opposing substrate second major surface, and a first conductive pattern adjacent to the substrate first major surface. A first electronic component is coupled to the substrate and includes a first component first side and a first device structure adjacent to the first component first side. A second electronic component is adjacent to the substrate second major surface and includes a second component first side and a second device structure adjacent to the second component first side. A third electronic component is coupled to the substrate. The first electronic component is generally orthogonal to the substrate and the first device structure is oriented in a first direction, and the second device structure is oriented in a second direction different than the first direction.

A method of using a processing oven may include disposing at least one substrate in a chamber of the oven and activating a lamp assembly disposed above them to increase their temperature to a first temperature. A chemical vapor may be admitted into the chamber above the at least one substrate and an inert gas may be admitted into the chamber below the at least one substrate. The temperature of the at least one substrate may then be increased to a second temperature higher than the first temperature and then cooled down.

Provided is a method of mounting bonding material deposits, a method of mounting bonding material deposits in mounting recesses formed in a mask so that the bonding material deposits may be mounted on an electrode of a substrate. According to the method of mounting the bonding material deposits, an area of the region where the bonding material deposits are concentrated in the chamber is increased, and thus, small and light-weight conductive balls may be effectively mounted in the mounting recesses of the mask. Also, according to the method of mounting the bonding material deposits, because chances that the bonding material deposits come into contact with the mounting recesses in the mask increase, the bonding material deposits may be rapidly and thoroughly mounted in the plurality of mounting recesses formed in the mask.

A method of using a processing oven may include disposing at least one substrate in a chamber of the oven and activating a lamp assembly disposed above them to increase their temperature to a first temperature. A chemical vapor may be admitted into the chamber above the at least one substrate and an inert gas may be admitted into the chamber below the at least one substrate. The temperature of the at least one substrate may then be increased to a second temperature higher than the first temperature and then cooled down.