H01L21/67034

WAFER PROCESSING METHOD

A wafer processing method of the present invention includes mounting a wafer part on a chuck table, loading the wafer part on the chuck table, spraying, by a spray arm module, a first processing solution onto the wafer part to process the wafer part, spraying, by the spray arm module, a second processing solution onto the wafer part to process the wafer part, drying the wafer part on the chuck table, and unloading the wafer part from the chuck table.

APPARATUS AND METHOD FOR PROCESSING SUBSTRATE

An apparatus for processing a substrate includes a process chamber; a support which is placed inside the process chamber and supports the substrate; a fluid supplier which supplies fluid into the process chamber; and a controller configured to perform a compressing step to bring the fluid into a supercritical phase inside the process chamber, in which the compressing step includes a continuous first section and second section, the fluid supplier includes a first portion and a second portion, and the controller supplies the fluid into the process chamber at a first speed during the first section using the first portion, and supplies the fluid into the process chamber at a second speed higher than the first speed during the second section using the second portion.

SUBSTRATE ROTATING APPARATUS, SUBSTRATE PROCESSING SYSTEM INCLUDING THE SAME, AND SUBSTRATE PROCESSING METHOD USING THE SAME

A substrate rotating apparatus may include a spin chuck supporting a substrate and a stage rotating the spin chuck about an axis parallel to a first direction. The spin chuck may include a first magnetic element and a substrate supporting member thereon. The stage may include a stage housing, a rotating part rotating about the axis, an inner control unit controlling rotation of the rotating part, a power supplying part supplying a power to the rotating part, and a wireless communication part receiving a control signal from an outside and transmitting the control signal to the inner control unit. The rotating part may include a second magnetic element spaced apart from the first magnetic element and a rotation driver rotating the second magnetic element. The rotating part, the inner control unit, the power supplying part, and the wireless communication part may be placed in the stage housing.

SUPERCRITICAL FLUID PROCESSING APPARATUS AND SUBSTRATE PROCESSING SYSTEM INCLUDING THE SAME

A supercritical fluid processing apparatus including a supercritical fluid supply module including a gas liquefier to liquefy a gas transferred from a gas supply and provide a liquefied fluid, a storage tank to change the liquefied fluid to a supercritical state and store a supercritical fluid, and an internal pipe connecting the gas liquefier to the storage tank; an exhaust fluid supply module including an exhaust fluid liquefier including a regeneration storage tank to collect a first exhaust fluid from the storage tank, and a refrigerant pipe to liquefy the first exhaust fluid in the regeneration storage tank and maintain the liquefied first exhaust fluid at a predetermined temperature/pressure; a first exhaust pipe to transfer the first exhaust fluid from the storage tank to the exhaust fluid liquefier; and a resupply pipe to resupply the first exhaust fluid collected and liquefied in the exhaust fluid liquefier to the storage tank.

PYROMETRY ERROR DETECTION SENSOR FOR RTP TEMPERATURE CONTROL SYSTEM

Embodiments disclosed herein include a method for determining a temperature error of a pyrometer. In an embodiment, the method comprises measuring a first signal with a first sensor of the pyrometer and measuring a second signal with a second sensor of the pyrometer. In an embodiment, the method further comprises determining a reflectivity of a reflector plate from the first signal and the second signal, and determining the temperature error using the reflectivity.

Systems and methods for solvent extraction
11577270 · 2023-02-14 · ·

Systems and methods for venting a solvent are disclosed. The system includes a chamber, such as an oven having an interior volume defining a heating zone, where the interior volume receives at least one substrate coated with a coating material comprising a solvent. The system further includes a vent coupled to the oven and defining a passage between the interior volume and the environment external to the oven. The system also includes a solvent sensor measuring an amount of evaporated solvent present in the interior volume, and a fan removing at least a portion of the solvent from the interior volume. The system may also include a coating assembly including an applicator and a flow meter, wherein the applicator applies a portion of the coating material to the substrate, and the flow meter determines the amount of coating material applied to the substrate.

Wafer drying system

A wafer drying method that detects molecular contaminants in a drying gas as a feedback parameter for a multiple wafer drying process is disclosed. For example, the method includes dispensing, in a wafer drying module, a drying gas over a batch of wafers. Further, the method includes collecting the drying gas from an exhaust of the wafer drying module and determining the concentration of contaminants in the drying gas. The method also includes re-dispensing the drying gas over the batch of wafers if the concentration of contaminants is greater than a baseline value and transferring the batch of wafers out of the wafer drying module if the concentration is equal to or less than the baseline value.

Substrate processing apparatus and control method thereof

A substrate processing apparatus includes: a processing container including a processing space capable of accommodating a substrate in a state where a surface of the substrate is wet by a liquid; a processing fluid supply that supplies a processing fluid in a supercritical state to the processing space toward the liquid; a first exhaust line connected to a first exhaust source; a second exhaust line connected to a second exhaust source and connected to the first exhaust line between the first exhaust source and the processing space; and a controller controlling the second exhaust pressure. The processing fluid in the supercritical state contacts the liquid to dry the substrate, and the controller makes the second exhaust pressure to be higher than the first exhaust pressure during a period in which the processing fluid supply stops supplying the processing fluid to the processing space.

DEVICE FOR DRYING SEMICONDUCTOR SUBSTRATES
20230008740 · 2023-01-12 ·

A device is for drying disc-shaped substrates. The device has an elongated body, which tapers upwards to form a wedge having an angle α between two surfaces and an upper edge. The upper edge is suitable for holding the disc-shaped substrates. The two surfaces have more than one hole, each forming channels, which extend to a lower drainage part of the elongated body.

APPARATUS AND METHOD FOR DRYING SUBSTRATE
20230010670 · 2023-01-12 ·

Provided is a substrate drying apparatus. The substrate drying apparatus may include an upper chamber body including an inlet configured to introduce a supercritical fluid into a chamber space, a lower chamber body including an outlet configured to discharge the supercritical fluid outside the chamber space, and a stage configured to be loaded with a wet substrate and arranged in the chamber space, wherein the upper chamber body and the lower chamber body are configured such that the chamber space is closed by bringing the upper chamber body into contact with the lower chamber body, and the chamber space is opened by separating the upper chamber body from the lower chamber body, and the stage comprises a heater configured to heat the substrate and the supercritical fluid.