A chemical mechanical planarization system includes a chemical mechanical planarization pad that rotates during a chemical mechanical planarization process. A chemical mechanical planarization head places a semiconductor wafer in contact with the chemical mechanical planarization pad during the process. A slurry supply system supplies a slurry onto the pad during the process. A pad conditioner conditions the pad during the process. An impurity removal system removes debris and impurities from the slurry.

A substrate processing apparatus includes a chamber including an upper chamber and a lower chamber coupled to each other to provide a space for processing a substrate, a substrate support configured to support the substrate within the chamber, an upper supply port provided in the upper chamber and configured to supply a supercritical fluid on an upper surface of the substrate within the chamber, a recess provided in a lower surface of the upper chamber, the recess including a horizontal extension portion extending in a direction parallel with the upper surface of the substrate in a radial direction from an outlet of the upper supply port and an inclined extension portion extending obliquely at an angle from the horizontal extension portion, and a baffle member disposed within the recess between the upper supply port and the substrate.

In a substrate processing method, a rinse process using a rinse solution is performed on a development-processed photoresist pattern on a substrate. A substitution process including a first substitution step using a mixed solution of a non-polar organic solvent and a surfactant and a second substitution step using the non-polar organic solvent is performed on the substrate. The substitution process is performed a plurality of times until the rinse solution remaining on the substrate is less than a predetermined value. A supercritical fluid drying process is performed on the substrate to dry the non-polar organic solvent remaining on the substrate.

The inventive concept provides a substrate treating apparatus. The substrate treating apparatus includes a chamber providing an inner space; a fluid supply unit configured to supply a treating fluid to the inner space; and a fluid exhaust unit configured to exhaust the treating fluid from the inner space, and wherein the fluid exhaust unit includes: an exhaust line connected to the chamber; and a pressure adjusting member installed at the exhaust line and configured to maintain a pressure of the inner space to a set pressure, and wherein the fluid supply unit includes: a fluid supply source; and a supply line provided between the fluid supply source and the chamber, and wherein at the supply line or the exhaust line a flow rate measuring member configured to measure a flow rate per unit time of the treating fluid flowing at the inner space is installed.

A wafer drying apparatus is disclosed. The wafer drying apparatus may include a drying chamber housing providing a drying space, in which a wafer is disposed, a supercritical fluid supplying part configured to supply a supercritical fluid into the drying space, a wafer heating part configured to heat the wafer disposed in the drying space, and a wafer cooling part configured to cool the wafer disposed in the drying space. The wafer cooling part may include a cooling plate disposed below a place, on which the wafer is loaded, and a cooling conduit inserted in the cooling plate.

A substrate cleaning apparatus and related apparatuses/methods are disclosed. In one embodiment, a substrate cleaning apparatus includes: a first spindle group including a first driving spindle having a first driving roller configured to rotate a substrate and an idler spindle having a driven roller rotated by the substrate; a second spindle group including a plurality of second driving spindles each having a second driving roller configured to rotate the substrate; a cleaning mechanism configured to clean the substrate rotated by the first driving roller and the plurality of second driving rollers; and a rotation detector configured to detect the rotational speed of the driven roller. The driven roller is positioned on the opposite side to a direction in which the substrate receives a force from the cleaning mechanism.

An apparatus and method for drying semiconductor wafers. The apparatus includes a tank that holds hold a liquid, a first lifting assembly, and a second lifting assembly. The first lifting assembly lifts and lowers a first wafer carrier and one or more semiconductor wafers supported thereon between a first lowered position in which the one or more semiconductor wafers are completely submerged in the liquid in the tank and a first raised position in which an upper portion of the one or more semiconductor wafers are not submerged in the liquid in the tank. The second lifting assembly has a second wafer carrier that engages the upper portion of the one or more semiconductor wafers and continues to lift the one or more semiconductor wafers until an entirety of the one or more semiconductor wafers is no longer submerged in the liquid in the tank.

A substrate support is configured to support a substrate. The substrate support comprises a plurality of burls protruding from a base surface of the substrate support. The burls have distal ends in a plane for supporting a lower surface of the substrate with a gap between the base surface of the substrate support and the lower surface of the substrate. The substrate support comprises a liquid supply channel for supplying a conductive liquid to the gap so as to bridge the gap between the base surface of the substrate support and the lower surface of the substrate, thereby allowing charge to pass between the substrate support and the substrate. The substrate support has a controlled electrical potential such that charge distribution at the lower surface of the substrate can be manipulated.

The inventive concept provides a substrate treating apparatus. The substrate treating apparatus includes a chamber providing an inner space; a fluid supply unit configured to supply a drying fluid to the inner space; and a fluid exhaust unit configured to exhaust the drying fluid from the inner space, and wherein the fluid exhaust unit includes an exhaust line connected to the chamber; a pressure adjusting member installed at the exhaust line and configured to maintain a pressure of the inner space at a set pressure; and a heating member installed at the pressure adjusting member or a back end of the pressure adjusting member.

A cutting apparatus includes a cassette table on which a first cassette in which a frame unit, ring-shaped frame and wafer are housed, and a second cassette in which a simple wafer is housed. A first conveying unit having a first frame holding part holds the ring-shaped frame of the frame unit withdrawn from the first cassette and conveys the frame unit to a chuck table. A first wafer holding part holds the simple wafer withdrawn from the second cassette and conveys the simple wafer to the chuck table. A cutting unit cuts the wafer, and a second conveying unit conveys the frame unit from the chuck table to a cleaning unit. A second wafer holding part holds the cut simple wafer and conveys it from the chuck table to the cleaning unit.